IRF640NPBF N-Channel 200V 18A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF640NPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 18A continuous drain current at 25°C. This device is packaged in TO-220AB through-hole configuration and is classified as "Not For New Designs," indicating it has been superseded in Infineon's product portfolio. The part operates across a temperature range of -55°C to 175°C and dissipates up to 150W at the case temperature. Due to its discontinued status for new designs, equivalent and substitute parts from active product lines are necessary for ongoing applications and new system development.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	18	A
On-State Resistance (Rds On) @ 11A, 10V	150	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	67	nC
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF640NPBF is determined by strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must equal or exceed 18A at 25°C
Package Type: Must be TO-220AB or compatible TO-220 through-hole configuration
Gate Drive Voltage: Must support 10V drive voltage
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; higher values acceptable if within thermal limits
Gate Charge (Qg): Affects switching speed; variations acceptable within application requirements
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (Same Vdss, Same or Higher Id): Parts meeting or exceeding all critical parameters with minimal performance trade-offs.

Category B - Functional Alternatives (Same Vdss, Comparable Id): Parts with slight variations in current rating or thermal characteristics that remain functionally compatible within the 200V, 18A+ specification envelope.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Temp Range (°C)	Product Status
IRF640NPBF	Infineon	200	18	150	67	150	-55 to 175	Not For New Designs
IRFB4020PBF	Infineon	200	18	100	29	100	-55 to 175	Active
IRFB4620PBF	Infineon	200	25	72.5	38	144	-55 to 175	Active
IRF640PBF	Vishay Siliconix	200	18	180	70	125	-55 to 150	Active
PHP20NQ20T,127	NXP Semiconductors	200	20	130	65	150	-55 to 175	Active
PJP18N20_T0_00001	Panjit International	200	18	160	24	89	-55 to 150	Active
STP17NF25	STMicroelectronics	250	17	165	29.5	90	-55 to 150	Active
STP19NF20	STMicroelectronics	200	15	160	24	90	-55 to 150	Active
STP20NF20	STMicroelectronics	200	18	125	39	110	-55 to 175	Active

Engineering Selection Recommendations

Tier 1 - Preferred Substitutes (Active Status, Full Temperature Range -55°C to 175°C):

IRFB4020PBF and IRFB4620PBF from Infineon Technologies are preferred substitutes. Both devices maintain active product status and support the full -55°C to 175°C operating temperature range. IRFB4020PBF provides equivalent 18A current rating with improved on-state resistance (100 mOhm vs. 150 mOhm), reducing conduction losses. IRFB4620PBF offers higher current capability (25A) with superior on-state resistance (72.5 mOhm), providing design margin for thermal and electrical performance.

STP20NF20 from STMicroelectronics is an alternative Tier 1 option, matching the 18A current rating and 200V voltage specification with active product status and full temperature range support. On-state resistance of 125 mOhm provides performance between the IRF640NPBF and IRFB4020PBF.

Tier 2 - Functional Alternatives (Active Status, Limited Temperature Range -55°C to 150°C):

IRF640PBF (Vishay Siliconix), PJP18N20_T0_00001 (Panjit International), and STP19NF20 (STMicroelectronics) are functionally compatible but operate to 150°C maximum junction temperature, compared to the IRF640NPBF's 175°C rating. These parts are suitable for applications not requiring the extended upper temperature range.

Tier 3 - Limited Compatibility:

STP17NF25 operates at 250V Vdss with 17A current rating. While voltage margin is provided, the current rating falls below the 18A specification. This part is suitable only for applications where 17A continuous current is acceptable.

Compliance Considerations:

All substitute parts maintain ROHS3 compliance. IRF640PBF carries REACH Affected status, whereas all other substitutes are REACH Unaffected. Selection should account for supply chain and regulatory requirements specific to the application region.

Frequently Asked Questions (FAQ)

Q1: Can IRF640PBF directly replace IRF640NPBF?

IRF640PBF is electrically compatible, matching the 200V/18A specification and TO-220AB package. However, it operates to 150°C maximum junction temperature versus 175°C for IRF640NPBF, and carries REACH Affected status. It is suitable for applications not requiring the extended temperature range.

Q2: What is the difference between IRFB4020PBF and IRFB4620PBF as substitutes?

Both are Infineon active products supporting the full -55°C to 175°C range. IRFB4020PBF matches the 18A current rating with improved on-state resistance (100 mOhm). IRFB4620PBF provides higher current capability (25A) with superior on-state resistance (72.5 mOhm), offering greater design margin. Selection depends on whether the application requires the additional current capacity.

Q3: Why does STP17NF25 have a higher Vdss rating (250V) than IRF640NPBF (200V)?

STP17NF25 is rated for 250V Vdss, providing voltage margin above the 200V requirement. However, its continuous drain current is 17A, which is below the 18A specification of IRF640NPBF. This part is suitable only for applications where 17A continuous current satisfies the design requirement.

Q4: Are all substitute parts available in the same TO-220AB package?

All listed substitute parts are available in TO-220 or TO-220AB through-hole packages, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions.

Q5: What is the significance of "Not For New Designs" status for IRF640NPBF?

This status indicates that Infineon has discontinued the part for new design applications. Existing inventory remains available, but the manufacturer recommends using active alternatives for new projects. IRFB4020PBF and IRFB4620PBF are the recommended Infineon replacements.

Q6: How do gate charge differences affect circuit performance?

Gate charge (Qg) determines the energy required to switch the MOSFET. Lower gate charge (e.g., IRFB4020PBF at 29 nC) reduces driver power consumption and enables faster switching. Higher gate charge (e.g., IRF640NPBF at 67 nC) requires more driver current but does not prevent substitution if the gate driver is adequately rated.

Q7: Which substitute offers the best thermal performance?

IRFB4620PBF provides the lowest on-state resistance (72.5 mOhm) and highest power dissipation rating (144W), resulting in the lowest conduction losses and best thermal performance among the listed substitutes.

Q8: Can I use a substitute with lower power dissipation rating than IRF640NPBF (150W)?

Substitutes with lower power dissipation ratings (e.g., PJP18N20_T0_00001 at 89W, STP19NF20 at 90W) are acceptable if the application's thermal design does not require the full 150W dissipation capability. Verify that the substitute's thermal characteristics meet the specific application's heat dissipation requirements.

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