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IRF640NL N-Channel MOSFET 200V 18A TO-262 Equivalent & Substitute Parts
Part Overview
The IRF640NL is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 18A continuous drain current in a Through Hole TO-262 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The IRF640NL belongs to the HEXFET® series and is suitable for applications requiring moderate voltage and current switching capabilities with 150W power dissipation capacity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 18 | A (Tc) |
| Rds On (Max) @ 11A, 10V | 150 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Power Dissipation (Max) | 150 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package | TO-262-3 | — |
Substitute Part Grouping Explanation
Substitute parts for the IRF640NL are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is as follows:
Direct Electrical Equivalents: Parts must maintain N-Channel MOSFET technology with Vdss rated at or above 200V, continuous drain current at or above 18A, and Rds On characteristics suitable for the same application class. The gate threshold voltage, gate charge, and input capacitance must fall within acceptable ranges to ensure proper gate drive compatibility.
Mechanical Compatibility: All substitute parts must use Through Hole mounting in the TO-262 package family (including I2PAK variants) to ensure direct PCB footprint compatibility without redesign.
Key Substitution Parameters:
- Drain-to-Source Voltage (Vdss): ≥ 200V
- Continuous Drain Current (Id): ≥ 18A
- Package Type: TO-262 or I2PAK (Through Hole)
- Technology: N-Channel MOSFET (Metal Oxide)
- Rds On: ≤ 150mOhm (at rated conditions)
Parameter Comparison
| Parameter | IRF640NL | IRF640NLPBF | FQI27N25TU | Unit |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Fairchild Semiconductor | — |
| FET Type | N-Channel | N-Channel | N-Channel | — |
| Vdss | 200 | 200 | 250 | V |
| Id @ 25°C | 18 | 18 | 25.5 | A (Tc) |
| Rds On (Max) | 150 | 150 | 110 | mOhm |
| Vgs(th) (Max) | 4 | 4 | 5 | V |
| Gate Charge (Qg) @ 10V | 67 | 67 | 65 | nC |
| Power Dissipation (Max) | 150 | 150 | 180 | W (Tc) |
| Operating Temperature | -55 to 175 | -55 to 175 | -55 to 150 | °C (TJ) |
| Package | TO-262-3 | TO-262-3 | TO-262 (I2PAK) | — |
| Product Status | Obsolete | Obsolete | Active | — |
| RoHS Status | Non-compliant | ROHS3 Compliant | Not specified | — |
Engineering Selection Recommendations
IRF640NLPBF (Infineon Technologies): This part is an exact electrical and mechanical equivalent to the IRF640NL, differing only in packaging format (Tube vs. standard packaging) and RoHS compliance status. IRF640NLPBF is ROHS3 compliant, making it suitable for applications with RoHS requirements. Both parts share identical electrical specifications: 200V Vdss, 18A continuous drain current, 150mOhm Rds On, and 150W power dissipation. The operating temperature range is identical (-55°C to 175°C). This substitute is recommended as the primary choice for direct replacement when RoHS compliance is required or when the original IRF640NL becomes unavailable.
FQI27N25TU (Fairchild Semiconductor): This part provides enhanced electrical performance with higher Vdss (250V), increased continuous drain current (25.5A), and lower Rds On (110mOhm). The FQI27N25TU is rated for 180W power dissipation and maintains the same TO-262 (I2PAK) Through Hole package footprint. This device is currently in Active product status, ensuring long-term availability. The higher voltage and current ratings provide design margin for applications operating near the IRF640NL limits. The operating temperature range is -55°C to 150°C, which is 25°C lower than the IRF640NL maximum. Selection of FQI27N25TU is appropriate when enhanced performance specifications and active product status are prioritized, provided the lower maximum junction temperature is acceptable for the application.
Frequently Asked Questions (FAQ)
Q: Can IRF640NLPBF be used as a direct replacement for IRF640NL?
A: Yes. IRF640NLPBF is electrically and mechanically identical to IRF640NL. Both devices have 200V Vdss, 18A continuous drain current, 150mOhm Rds On, and identical operating temperature range. The primary difference is RoHS compliance status (ROHS3 for IRF640NLPBF). Direct PCB substitution is possible without circuit modification.
Q: What are the advantages of using FQI27N25TU over IRF640NL?
A: FQI27N25TU offers higher voltage rating (250V vs. 200V), higher current capacity (25.5A vs. 18A), and lower on-resistance (110mOhm vs. 150mOhm). These specifications provide improved performance margin and reduced power dissipation. FQI27N25TU is also in Active product status, ensuring continued availability. The trade-off is a lower maximum junction temperature (150°C vs. 175°C).
Q: Are all three parts compatible with the same PCB footprint?
A: Yes. IRF640NL, IRF640NLPBF, and FQI27N25TU all use Through Hole TO-262 packaging (including I2PAK variant). The three long leads and pin configuration are identical, allowing direct PCB substitution without layout modification.
Q: What is the significance of the obsolete product status for IRF640NL?
A: Obsolete status indicates that Infineon Technologies has discontinued manufacturing and support for IRF640NL. This creates supply risk and potential long-term unavailability. IRF640NLPBF provides an equivalent alternative from the same manufacturer. FQI27N25TU, with Active status, offers the most secure long-term availability.
Q: Does the lower maximum junction temperature of FQI27N25TU (150°C vs. 175°C) affect substitution suitability?
A: The lower maximum junction temperature of FQI27N25TU must be evaluated against the specific application's thermal design. If the IRF640NL design operates with junction temperatures consistently below 150°C, FQI27N25TU is suitable. Applications requiring sustained operation above 150°C junction temperature should retain IRF640NLPBF or verify thermal performance with FQI27N25TU before substitution.
Q: What is the impact of different gate threshold voltages (4V for IRF640NL vs. 5V for FQI27N25TU)?
A: The gate threshold voltage difference (1V) affects gate drive circuit design. FQI27N25TU requires slightly higher gate voltage to achieve full conduction. Existing gate drive circuits designed for IRF640NL (4V threshold) will still function with FQI27N25TU but may operate with reduced gate overdrive margin. Verification of gate drive voltage adequacy is recommended before substitution.
Q: Are there any compliance or certification differences between the three parts?
A: IRF640NLPBF is ROHS3 compliant, while IRF640NL is RoHS non-compliant. FQI27N25TU compliance status is not specified in the provided data. All three parts are classified as REACH Unaffected and carry EAR99 ECCN designation. Applications with RoHS requirements should use IRF640NLPBF or verify FQI27N25TU compliance status with the manufacturer.
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