IRF640LPBF Equivalent & Substitute Parts

Part Overview

The IRF640LPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 18A continuous drain current in a through-hole TO-262-3 package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. Substitute parts must maintain electrical performance within the specified parameter ranges while accommodating different package configurations and manufacturing sources.

Substiute Parts

IRF640LPBF
Vishay SiliconixIn Stock: 3910IRF640LPBF Datasheet
IRF640LPBF
Current Part
IRF640NLPBF
Infineon TechnologiesIn Stock: 2232IRF640NLPBF Datasheet
IRF640NLPBF
Direct
FQB19N20TM
onsemiIn Stock: 1814FQB19N20TM Datasheet
FQB19N20TM
MFR Recommended
IRF640NSTRLPBF
Infineon TechnologiesIn Stock: 25376IRF640NSTRLPBF Datasheet
IRF640NSTRLPBF
MFR Recommended
RCJ160N20TL
Rohm SemiconductorIn Stock: 2194RCJ160N20TL Datasheet
RCJ160N20TL
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 18 A (Tc)
On-State Resistance (Rds On) @ 11A, 10V 180 mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 70 nC
Input Capacitance (Ciss) @ 25V 1300 pF
Maximum Gate-Source Voltage (Vgs) ±20 V
Operating Temperature Range (TJ) -55 to 150 °C
Mounting Type Through Hole
Package TO-262-3

Substitute Part Grouping Explanation

Substitution of the IRF640LPBF is determined by equivalence in the following critical electrical parameters: drain-to-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), gate threshold voltage (Vgs(th)), and operating temperature range. All substitute parts maintain the 200V Vdss rating and support minimum 16A continuous drain current, meeting or exceeding the original specification.

Substitute parts are grouped into two categories based on mounting configuration:

Through-Hole Equivalents: IRF640NLPBF maintains identical electrical characteristics and through-hole mounting, differing only in manufacturer (Infineon Technologies) and improved maximum power dissipation (150W vs. 130W at Tc).

Surface-Mount Equivalents: FQB19N20TM, IRF640NSTRLPBF, and RCJ160N20TL provide electrical equivalence in surface-mount packages (D2PAK or LPTS), accommodating modern PCB assembly requirements. These parts maintain Vdss and Id specifications while offering improved thermal performance or reduced gate charge characteristics.

All substitute parts comply with RoHS3 and REACH requirements, matching the original part's regulatory status.

Parameter Comparison

Parameter IRF640LPBF (Main) IRF640NLPBF FQB19N20TM IRF640NSTRLPBF RCJ160N20TL
Manufacturer Vishay Siliconix Infineon Technologies onsemi Infineon Technologies Rohm Semiconductor
Vdss (V) 200 200 200 200 200
Id @ 25°C (A) 18 18 19.4 18 16
Rds On @ 10V (mOhm) 180 @ 11A 150 @ 11A 150 @ 9.7A 150 @ 11A 180 @ 8A
Vgs(th) @ 250µA (V) 4 4 5 4 5.25
Qg @ 10V (nC) 70 67 40 67 26
Ciss @ 25V (pF) 1300 1160 1600 1160 1370
Vgs Max (V) ±20 ±20 ±30 ±20 ±30
TJ Range (°C) -55 to 150 -55 to 175 -55 to 150 -55 to 175 -55 to 150
Power Dissipation @ Tc (W) 130 150 140 150 40
Mounting Type Through Hole Through Hole Surface Mount Surface Mount Surface Mount
Package TO-262-3 TO-262 TO-263 (D2PAK) D2PAK LPTS
Product Status Obsolete Obsolete Active Active Active

Engineering Selection Recommendations

For Through-Hole PCB Designs: IRF640NLPBF is the direct functional equivalent, maintaining through-hole TO-262 mounting while offering improved thermal performance (150W vs. 130W at Tc) and extended operating temperature range (-55°C to 175°C). This part is classified as obsolete but remains available in inventory. Selection of this part preserves existing PCB layouts without modification.

For Surface-Mount PCB Designs: IRF640NSTRLPBF is recommended as the primary surface-mount substitute. This part maintains electrical equivalence to the original IRF640LPBF with identical Vdss, Id, Rds On, and Vgs(th) specifications while offering superior thermal performance (150W at Tc) and extended temperature range (-55°C to 175°C). Product status is active with substantial inventory availability (25,300 pcs).

Alternative Surface-Mount Options: FQB19N20TM provides enhanced drain current capability (19.4A vs. 18A) with reduced gate charge (40nC vs. 70nC), suitable for applications requiring faster switching or higher current margins. RCJ160N20TL offers the lowest gate charge (26nC) and reduced power dissipation (40W at Tc), appropriate for low-power or high-frequency switching applications, though with reduced continuous drain current (16A vs. 18A).

All substitute parts maintain RoHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with the original specification.

Frequently Asked Questions (FAQ)

Q: Can IRF640NLPBF directly replace IRF640LPBF in existing through-hole designs?

A: Yes. IRF640NLPBF maintains identical electrical specifications (200V Vdss, 18A Id, 4V Vgs(th)) and through-hole TO-262 mounting. PCB layouts require no modification. The substitute offers improved thermal performance (150W vs. 130W at Tc) and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C).

Q: What are the implications of switching from through-hole to surface-mount packages?

A: Surface-mount substitutes (FQB19N20TM, IRF640NSTRLPBF, RCJ160N20TL) require PCB redesign to accommodate D2PAK or LPTS footprints instead of TO-262-3. Electrical performance remains equivalent or superior. Surface-mount packages typically offer improved thermal characteristics due to direct PCB contact and reduced lead inductance.

Q: Which substitute part is suitable for high-frequency switching applications?

A: RCJ160N20TL exhibits the lowest gate charge (26nC vs. 70nC in the original), reducing switching losses and enabling higher frequency operation. FQB19N20TM also provides reduced gate charge (40nC), making it suitable for moderate-frequency applications requiring faster switching transitions.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (IRF640NLPBF, FQB19N20TM, IRF640NSTRLPBF, RCJ160N20TL) maintain RoHS3 compliance and REACH unaffected status, matching the original IRF640LPBF regulatory classification.

Q: What is the difference between IRF640NSTRLPBF and IRF640NLPBF?

A: IRF640NSTRLPBF is a surface-mount D2PAK variant with active product status and high inventory availability (25,300 pcs). IRF640NLPBF is a through-hole TO-262 variant with obsolete product status. Both maintain identical electrical specifications and are manufactured by Infineon Technologies.

Q: Can RCJ160N20TL replace IRF640LPBF in all applications?

A: RCJ160N20TL is suitable for applications where continuous drain current requirements do not exceed 16A. The original IRF640LPBF is rated for 18A continuous drain current. RCJ160N20TL offers advantages in gate charge (26nC) and power dissipation (40W at Tc) for lower-current applications.

Q: What is the maximum gate-source voltage for each substitute part?

A: IRF640NLPBF and IRF640NSTRLPBF maintain ±20V maximum Vgs, identical to the original. FQB19N20TM and RCJ160N20TL support ±30V maximum Vgs, providing greater gate drive voltage margin in applications with variable gate drive supplies.

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