IRF640L N-Channel MOSFET 200V 18A Equivalent & Substitute Parts

Part Overview

The IRF640L is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage and 18A continuous drain current in the I2PAK package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement. The IRF640L operates across a temperature range of -55°C to 150°C and features a maximum on-resistance of 180mOhm at specified conditions. Due to its obsolete status, alternative parts with compatible electrical and mechanical characteristics are required for system continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	200	V
Current - Continuous Drain (Id) @ 25°C	18	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	180	mOhm
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1300	pF @ 25V
Power Dissipation (Max)	130	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA	—
RoHS Status	RoHS non-compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IRF640L is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On): 10V
Vgs (Max): ±20V
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)

Allowable Variation Parameters:

Rds On (Max) @ Id, Vgs: Substitute values must not exceed the original specification
Gate Charge (Qg): Lower values are acceptable
Input Capacitance (Ciss): Variation within component tolerance is acceptable
Power Dissipation (Max): Higher values indicate improved thermal performance
Operating Temperature Range: Extended ranges are acceptable
Package / Case: Compatible through-hole packages are acceptable
RoHS Status: Compliance improvements are acceptable

The identified substitute parts meet all mandatory matching parameters while offering improvements in thermal performance, compliance certifications, or availability status.

Parameter Comparison

Parameter	IRF640L (Main)	IRFB4020PBF	IRF640NLPBF	Unit
Manufacturer	Vishay Siliconix	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	200	200	200	V
Current - Continuous Drain (Id) @ 25°C	18	18	18	A (Tc)
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	180 @ 11A, 10V	100 @ 11A, 10V	150 @ 11A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4.9 @ 100µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	70 @ 10V	29 @ 10V	67 @ 10V	nC
Vgs (Max)	±20	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1300 @ 25V	1200 @ 50V	1160 @ 25V	pF
Power Dissipation (Max)	130 (Tc)	100 (Tc)	150 (Tc)	W
Operating Temperature Range	-55 to 150	-55 to 175	-55 to 175	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	—
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-220-3	TO-262-3 Long Leads, I2PAK, TO-262AA	—
Product Status	Obsolete	Active	Obsolete	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

IRFB4020PBF (Infineon Technologies)

The IRFB4020PBF is an active-status N-Channel MOSFET with identical voltage and current ratings to the IRF640L. This part features improved on-resistance performance (100mOhm versus 180mOhm), reduced gate charge (29nC versus 70nC), and ROHS3 compliance. The primary consideration is package compatibility: the IRFB4020PBF uses TO-220AB packaging, which differs from the IRF640L's I2PAK package. This substitution requires PCB layout modification and is suitable for applications where package footprint changes are permissible. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin. This part is recommended for new designs and applications requiring RoHS compliance.

IRF640NLPBF (Infineon Technologies)

The IRF640NLPBF is an obsolete-status N-Channel MOSFET manufactured by Infineon Technologies with identical electrical specifications to the IRF640L across voltage, current, and gate threshold parameters. This part maintains the same I2PAK package configuration, enabling direct PCB substitution without layout modification. The IRF640NLPBF offers improved power dissipation capability (150W versus 130W) and ROHS3 compliance. Gate charge and input capacitance values are closely matched to the original part. The extended operating temperature range (-55°C to 175°C) exceeds the IRF640L specification. This part is recommended for direct replacement applications where package compatibility is critical and RoHS compliance is required.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4020PBF directly replace the IRF640L without PCB modification?

A: No. The IRFB4020PBF uses TO-220AB packaging while the IRF640L uses I2PAK (TO-262) packaging. These packages have different pin configurations and footprints. PCB layout modification is required for this substitution.

Q: Can the IRF640NLPBF directly replace the IRF640L without PCB modification?

A: Yes. The IRF640NLPBF uses the same I2PAK (TO-262-3 Long Leads) package as the IRF640L. Pin configuration and footprint are compatible, enabling direct PCB substitution.

Q: What is the significance of the lower on-resistance (Rds On) in the IRFB4020PBF?

A: Lower on-resistance (100mOhm versus 180mOhm) reduces conduction losses and heat generation during operation. This improves efficiency and thermal performance in switching applications.

Q: Why does the IRFB4020PBF have lower gate charge than the IRF640L?

A: Gate charge (Qg) of 29nC versus 70nC indicates faster switching characteristics. Lower gate charge reduces driver power requirements and enables higher switching frequencies with reduced switching losses.

Q: Are all three parts rated for the same drain-to-source voltage and continuous current?

A: Yes. All three parts are rated for 200V drain-to-source voltage (Vdss) and 18A continuous drain current (Id) at 25°C. They are electrically equivalent in these critical parameters.

Q: What is the impact of RoHS compliance on part selection?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances regulations. The IRF640L is RoHS non-compliant, while both IRFB4020PBF and IRF640NLPBF are ROHS3 compliant. Compliance status affects regulatory acceptance and long-term availability in regulated markets.

Q: Can the IRF640L be used in applications requiring RoHS compliance?

A: No. The IRF640L is RoHS non-compliant. Applications requiring RoHS compliance must use either the IRFB4020PBF or IRF640NLPBF.

Q: What is the difference in operating temperature range between the parts?

A: The IRF640L operates from -55°C to 150°C (TJ), while both IRFB4020PBF and IRF640NLPBF operate from -55°C to 175°C (TJ). The substitute parts provide 25°C additional upper temperature margin.

Q: Is the IRF640NLPBF still in production?

A: No. The IRF640NLPBF is classified as obsolete. However, it remains available from inventory. For long-term procurement, the active-status IRFB4020PBF is recommended despite package differences.

Q: How do input capacitance values affect circuit performance?

A: Input capacitance (Ciss) affects gate drive requirements and switching speed. The values across all three parts (1300pF, 1200pF, and 1160pF) are closely matched, indicating similar gate drive characteristics and switching performance.

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