IRF640FP N-Channel MOSFET 200V 18A Equivalent & Substitute Parts

Part Overview

The IRF640FP is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 200V drain-to-source voltage with 18A continuous drain current in a Through Hole TO-220FP package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	200	V
Current - Continuous Drain (Id) @ 25°C	18	A (Tc)
Rds On (Max) @ Id, Vgs	180	mOhm @ 9A, 10V
Power Dissipation (Max)	40	W (Tc)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Operating Temperature (TJ)	150	°C

Substitute Part Grouping Explanation

Substitution of the IRF640FP is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 200V minimum
N-Channel MOSFET technology
Through Hole mounting configuration
TO-220 package family compatibility
Gate threshold voltage (Vgs(th)) compatibility at specified test conditions

Secondary Compatibility Factors:

Continuous drain current (Id) at 25°C: Substitute must equal or exceed 18A
On-state resistance (Rds On): Lower or equivalent values acceptable
Power dissipation rating: 40W or higher acceptable
Gate charge (Qg): Lower values acceptable
Input capacitance (Ciss): Variation acceptable within application tolerance

Substitutes are grouped based on active product status and compliance certifications (RoHS3, REACH). Parts with lower current ratings or higher on-state resistance remain functionally compatible for applications not requiring full 18A capacity.

Parameter Comparison

Parameter	IRF640FP (Main)	FQPF19N20C	FQPF19N20	IRFI640GPBF
Manufacturer	STMicroelectronics	onsemi	Fairchild Semiconductor	Vishay Siliconix
Product Status	Obsolete	Active	Active	Active
Vdss (V)	200	200	200	200
Id @ 25°C (A)	18	19	11.8	9.8
Rds On (Max) @ 10V (mOhm)	180 @ 9A	170 @ 9.5A	150 @ 5.9A	180 @ 5.9A
Power Dissipation (W)	40	43	50	40
Vgs(th) @ 250µA (V)	4	4	5	4
Gate Charge Qg @ 10V (nC)	72	53	40	70
Ciss @ 25V (pF)	1560	1080	1600	1300
Vgs (Max) (±V)	±20	±30	±30	±20
Operating Temperature (°C)	150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220FP	TO-220F-3	TO-220F-3	TO-220-3
RoHS3 Compliant	Yes	Yes	Not specified	Yes

Engineering Selection Recommendations

Primary Substitute: FQPF19N20C (onsemi)

The FQPF19N20C is the preferred substitute for the IRF640FP. This part exceeds the original specification with 19A continuous drain current, matching the 200V voltage rating and maintaining equivalent on-state resistance characteristics. The device is active in production with RoHS3 compliance and REACH unaffected status. The TO-220F-3 package is mechanically compatible with TO-220 footprints. Extended operating temperature range (-55°C to 150°C) provides broader environmental tolerance than the original part.

Secondary Substitute: FQPF19N20 (Fairchild Semiconductor)

The FQPF19N20 maintains 200V voltage rating and 50W power dissipation capability. Current rating of 11.8A is reduced relative to the original 18A specification, limiting this substitute to applications with lower current demands. This part is active in production. RoHS3 compliance status is not specified in available documentation. TO-220F-3 package provides mechanical compatibility.

Tertiary Substitute: IRFI640GPBF (Vishay Siliconix)

The IRFI640GPBF maintains the 200V voltage rating and 40W power dissipation matching the original part. Continuous drain current is reduced to 9.8A, restricting this substitute to applications requiring less than 10A. This part is active in production with RoHS3 compliance and REACH affected status. The TO-220-3 package with isolated tab provides mechanical compatibility. Gate threshold voltage and maximum gate voltage specifications match the original part.

Compliance Considerations:

All active substitute parts maintain RoHS3 compliance. The FQPF19N20C and IRFI640GPBF are explicitly RoHS3 compliant. REACH status varies: FQPF19N20C is REACH unaffected, while IRFI640GPBF is REACH affected. Design requirements for specific regulatory environments must be evaluated against these certifications.

Frequently Asked Questions (FAQ)

Q: Can the FQPF19N20C directly replace the IRF640FP in existing designs?

A: The FQPF19N20C is electrically compatible with the IRF640FP across all critical parameters. Both devices share 200V Vdss rating, equivalent on-state resistance, and matching gate threshold voltage. The TO-220F-3 package is mechanically compatible with TO-220 PCB footprints. No circuit modifications are required for substitution.

Q: What is the current-handling difference between the IRF640FP and substitute parts?

A: The IRF640FP is rated for 18A continuous drain current. The FQPF19N20C exceeds this at 19A. The FQPF19N20 provides 11.8A, and the IRFI640GPBF provides 9.8A. Selection depends on application current requirements. For designs requiring the full 18A capacity, only the FQPF19N20C is suitable.

Q: Are there package differences between the main part and substitutes?

A: The IRF640FP uses TO-220FP packaging. Substitutes use TO-220F-3 or TO-220-3 variants. All three package types are mechanically compatible with standard TO-220 PCB footprints. The IRFI640GPBF features an isolated tab, which may require verification against thermal management requirements in specific applications.

Q: Which substitute offers the best compliance profile?

A: The FQPF19N20C provides the most comprehensive compliance documentation with explicit RoHS3 compliance and REACH unaffected status. All active substitutes meet EAR99 export classification requirements.

Q: How do on-state resistance values compare across substitutes?

A: The IRF640FP specifies 180 mOhm at 9A, 10V. The FQPF19N20C provides 170 mOhm at 9.5A, 10V, representing a 5.6% improvement. The FQPF19N20 provides 150 mOhm at 5.9A, 10V. The IRFI640GPBF matches the original at 180 mOhm at 5.9A, 10V. Lower on-state resistance reduces power dissipation in high-current applications.

Q: What is the significance of gate charge differences?

A: Gate charge affects switching speed and driver circuit requirements. The IRF640FP specifies 72 nC at 10V. The FQPF19N20C provides 53 nC, enabling faster switching with reduced driver stress. The FQPF19N20 provides 40 nC, the lowest among all parts. Lower gate charge is beneficial for high-frequency switching applications.

Q: Can the FQPF19N20 or IRFI640GPBF be used in applications requiring 18A continuous current?

A: No. The FQPF19N20 is rated for 11.8A and the IRFI640GPBF for 9.8A. Using these parts in 18A applications would exceed their continuous current ratings and cause thermal stress and potential device failure. These substitutes are suitable only for applications with current requirements below their respective ratings.

Q: What are the temperature operating range differences?

A: The IRF640FP operates to 150°C junction temperature. The FQPF19N20C and FQPF19N20 extend the lower limit to -55°C, providing -55°C to 150°C operating range. The IRFI640GPBF also provides -55°C to 150°C range. Extended low-temperature capability may be beneficial for aerospace or cold-environment applications.

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