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IRF640,127 N-Channel MOSFET 200V 16A Equivalent & Substitute Parts
Part Overview
The IRF640,127 is an N-Channel MOSFET manufactured by NXP USA Inc., rated for 200V drain-to-source voltage and 16A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The part operates across a temperature range of -55°C to 175°C and dissipates up to 136W at the case temperature, making it suitable for switching and amplification circuits requiring moderate power handling in the 200V class.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 16 | A |
| On-State Drain Resistance (Rds On) @ 8A, 10V | 180 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 1mA | 4 | V |
| Gate Charge (Qg) @ 10V | 63 | nC |
| Input Capacitance (Ciss) @ 25V | 1850 | pF |
| Power Dissipation (Max) | 136 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-220AB | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the IRF640,127 is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): Must equal 200V
- Package Type: Must be TO-220AB or TO-220-3 (Through Hole)
- FET Type: Must be N-Channel MOSFET
- Gate Drive Voltage: Must support 10V operation
Secondary Compatibility Parameters:
- Continuous Drain Current (Id): Substitute must meet or exceed 16A
- On-State Resistance (Rds On): Lower or equal values indicate improved performance
- Operating Temperature Range: Must support -55°C to 175°C minimum
- Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive circuits
- RoHS and REACH Compliance: Must maintain regulatory compliance
Substitutes are grouped into two categories:
Category A - Direct Electrical Equivalents (200V, 16A+): IRF640NPBF, IRF640PBF, IRL640A, STP19NF20
Category B - Reduced Current Rating (200V, <16A): IRF200B211
Category C - Reduced Voltage Rating (Not Recommended): IRFZ14PBF (60V rating - outside primary voltage specification)
Parameter Comparison
| Parameter | IRF640,127 (Main) | IRF640NPBF | IRF640PBF | IRF200B211 | IRL640A | STP19NF20 |
|---|---|---|---|---|---|---|
| Manufacturer | NXP USA Inc. | Infineon Technologies | Vishay Siliconix | Infineon Technologies | onsemi | STMicroelectronics |
| Vdss (V) | 200 | 200 | 200 | 200 | 200 | 200 |
| Id @ 25°C (A) | 16 | 18 | 18 | 12 | 18 | 15 |
| Rds On @ Rated Id, 10V (mOhm) | 180 @ 8A | 150 @ 11A | 180 @ 11A | 170 @ 7.2A | 180 @ 9A | 160 @ 7.5A |
| Vgs(th) (V) | 4 @ 1mA | 4 @ 250µA | 4 @ 250µA | 4.9 @ 50µA | 2 @ 250µA | 4 @ 250µA |
| Qg @ 10V (nC) | 63 | 67 | 70 | 23 | 56 | 24 |
| Ciss @ 25V (pF) | 1850 | 1160 | 1300 | 790 | 1705 | 800 |
| Power Dissipation (W) | 136 | 150 | 125 | 80 | 110 | 90 |
| Operating Temp Range (°C) | -55 to 175 | -55 to 175 | -55 to 150 | -55 to 175 | -55 to 150 | -55 to 150 |
| Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220-3 | TO-220 |
| Product Status | Obsolete | Not For New Designs | Active | Active | Obsolete | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Affected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
For Direct Replacement (Preferred):
IRF640PBF (Vishay Siliconix) is the primary recommended substitute. It maintains 200V/18A ratings with identical gate threshold voltage and package configuration. Product status is Active, ensuring long-term availability. ROHS3 compliance is maintained. Note: Operating temperature maximum is 150°C versus 175°C for the original part; verify thermal requirements for applications operating above 150°C. REACH status is Affected; confirm regulatory compliance for your application region.
IRF640NPBF (Infineon Technologies) provides superior electrical performance with lower on-state resistance (150mOhm) and higher power dissipation rating (150W). Product status is Not For New Designs; use only for legacy system maintenance where long-term supply is not critical. ROHS3 and REACH Unaffected compliance maintained.
For Equivalent Performance with Active Status:
STP19NF20 (STMicroelectronics) is rated for 200V/15A with Active product status, ensuring continued availability. On-state resistance of 160mOhm and reduced gate charge (24nC) provide improved switching characteristics. Operating temperature range is -55°C to 150°C. Suitable for applications where 15A continuous current meets design requirements.
For Reduced Current Applications:
IRF200B211 (Infineon Technologies) is rated for 200V/12A with Active product status. Lower gate charge (23nC) and input capacitance (790pF) reduce drive circuit complexity. Recommended only when application current requirements do not exceed 12A continuous.
Not Recommended:
IRFZ14PBF has reduced voltage rating (60V) and does not meet the 200V specification of the original part. Substitution is not valid for 200V circuit applications.
IRL640A (onsemi) is Obsolete status, providing no advantage over the original part for new procurement.
Frequently Asked Questions (FAQ)
Q: Can IRF640PBF directly replace IRF640,127 in all applications?
A: IRF640PBF is electrically compatible for 200V/18A operation and uses identical TO-220AB packaging. However, verify that your application does not require operation above 150°C, as IRF640PBF maximum operating temperature is 150°C versus 175°C for the original. Confirm REACH compliance requirements for your region, as IRF640PBF has REACH Affected status.
Q: What is the difference between IRF640NPBF and IRF640PBF?
A: Both are rated 200V/18A with TO-220AB packaging. IRF640NPBF (Infineon) offers lower on-state resistance (150mOhm) and higher power dissipation (150W), providing superior thermal performance. IRF640PBF (Vishay) has Active product status versus Not For New Designs for IRF640NPBF. For new designs, IRF640PBF is preferred; for performance-critical legacy systems, IRF640NPBF may be selected.
Q: Is STP19NF20 suitable as a substitute if my circuit requires 16A continuous current?
A: STP19NF20 is rated for 15A continuous drain current, which is below the 16A specification of IRF640,127. Use only if your actual circuit current requirement is 15A or less. For applications requiring 16A or higher, select IRF640NPBF or IRF640PBF.
Q: Why is IRFZ14PBF listed but not recommended?
A: IRFZ14PBF has a 60V drain-to-source voltage rating, which does not meet the 200V requirement of the original IRF640,127. Substitution would result in circuit failure or damage in 200V applications. This part is included only to clarify that reduced-voltage alternatives are not valid substitutes.
Q: What does "Not For New Designs" status mean for IRF640NPBF?
A: This status indicates the manufacturer is not recommending this part for new circuit designs and may discontinue production. IRF640NPBF is suitable for maintaining existing systems or legacy equipment but should not be selected for new product development. For new designs, choose IRF640PBF or STP19NF20, both with Active status.
Q: Are all substitute parts RoHS3 compliant?
A: All listed substitute parts are ROHS3 Compliant. However, IRF640PBF has REACH Affected status, while others are REACH Unaffected. Verify REACH compliance requirements for your specific application region and customer requirements before final selection.
Q: Can I use IRF200B211 if my application only requires 12A?
A: Yes. IRF200B211 is rated for 200V/12A with Active product status and REACH Unaffected compliance. It provides lower gate charge (23nC) and input capacitance (790pF), which may simplify gate drive circuit design. Use only when your application current requirement does not exceed 12A continuous.
Q: What is the significance of gate charge (Qg) differences between substitutes?
A: Gate charge affects switching speed and gate drive circuit power consumption. Lower Qg values (STP19NF20 at 24nC, IRF200B211 at 23nC) require less gate drive energy and enable faster switching. Higher Qg values (IRF640,127 at 63nC, IRF640NPBF at 67nC) require more robust gate drive circuits but may provide better noise immunity. Select based on your gate drive circuit capability and switching frequency requirements.
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