IRF640 N-Channel MOSFET 200V 18A TO-220 Equivalent & Substitute Parts

Part Overview

The IRF640 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 200V drain-to-source voltage with 18A continuous drain current at 25°C. Manufactured by STMicroelectronics, this device is packaged in a TO-220-3 through-hole configuration and is rated for 125W power dissipation. The IRF640 carries an obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing. This reference page provides direct electrical and mechanical equivalents suitable for direct replacement or design migration.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	18	A (Tc)
On-State Resistance (Rds On) @ Id, Vgs	180 mOhm @ 9A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	72	nC @ 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature (TJ)	150	°C
Package Type	TO-220-3	Through Hole
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of the IRF640 MOSFET is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must equal or exceed 18A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
FET Type: Must be N-Channel Metal Oxide technology
Gate Drive Voltage: Must support 10V drive voltage
Maximum Gate Voltage (Vgs): Must support ±20V

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit requirements
Power Dissipation: Must support thermal requirements of the application
Operating Temperature Range: Must encompass application operating conditions

Substitute parts are grouped into three categories based on electrical performance relative to the IRF640: direct equivalents (matching 18A rating), performance-enhanced substitutes (higher current ratings), and reduced-performance alternatives (lower current ratings suitable for de-rated applications).

Parameter Comparison

Parameter	IRF640 (Main)	IRF640NPBF	IRF640PBF	IRF200B211	IRFB4620PBF	PHP20NQ20T,127
Manufacturer	STMicroelectronics	Infineon Technologies	Vishay Siliconix	Infineon Technologies	Infineon Technologies	NXP Semiconductors
Vdss (V)	200	200	200	200	200	200
Id @ 25°C (A)	18	18	18	12	25	20
Rds On (mOhm)	180 @ 9A, 10V	150 @ 11A, 10V	180 @ 11A, 10V	170 @ 7.2A, 10V	72.5 @ 15A, 10V	130 @ 10A, 10V
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	4.9 @ 50µA	5 @ 100µA	4 @ 1mA
Qg (nC)	72 @ 10V	67 @ 10V	70 @ 10V	23 @ 10V	38 @ 10V	65 @ 10V
Ciss (pF)	1560 @ 25V	1160 @ 25V	1300 @ 25V	790 @ 50V	1710 @ 50V	2470 @ 25V
Power Dissipation (W)	125	150	125	80	144	150
Operating Temp (°C)	150	-55 to 175	-55 to 150	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Electrical Equivalents (18A Rating):

The IRF640NPBF (Infineon Technologies) and IRF640PBF (Vishay Siliconix) are direct electrical equivalents to the IRF640, both rated for 18A continuous drain current at 200V. The IRF640NPBF offers superior on-state resistance (150 mOhm versus 180 mOhm) and extended operating temperature range (-55°C to 175°C), providing enhanced thermal performance. However, IRF640NPBF carries a "Not For New Designs" status. The IRF640PBF maintains active product status and is suitable for new designs, though REACH status is affected. Both devices are electrically interchangeable with the obsolete IRF640 for applications requiring 18A continuous current.

Performance-Enhanced Substitute (Higher Current Rating):

The IRFB4620PBF (Infineon Technologies) is rated for 25A continuous drain current, providing 39% higher current capacity than the IRF640. This device features significantly lower on-state resistance (72.5 mOhm), reducing power dissipation and heat generation. The IRFB4620PBF is suitable for applications where the IRF640 operates near its current limits or where thermal margin improvement is required. This part maintains active product status and full compliance certifications.

Performance-Enhanced Substitute (Intermediate Current Rating):

The PHP20NQ20T,127 (NXP Semiconductors) is rated for 20A continuous drain current, providing 11% higher current capacity than the IRF640. This device features improved on-state resistance (130 mOhm) and maintains active product status. The PHP20NQ20T,127 is suitable for direct replacement in applications where marginal current headroom is desired without significant thermal redesign.

Reduced-Performance Alternative (Lower Current Rating):

The IRF200B211 (Infineon Technologies) is rated for 12A continuous drain current, representing a 33% reduction from the IRF640 specification. This device is suitable only for applications where the IRF640 is over-specified or where de-rated operation is acceptable. The IRF200B211 features lower gate charge (23 nC) and reduced input capacitance (790 pF), potentially simplifying gate drive circuits. This part maintains active product status.

Compliance and Sourcing Considerations:

All substitute parts listed are RoHS3 compliant and REACH unaffected or compliant. The IRF640PBF is the only substitute with affected REACH status. For new design implementations, IRF640PBF, IRFB4620PBF, and PHP20NQ20T,127 are recommended due to active product status. For legacy system support, IRF640NPBF provides electrical equivalence despite "Not For New Designs" designation.

Frequently Asked Questions (FAQ)

Q: Can the IRF640NPBF directly replace the obsolete IRF640?

A: Yes. The IRF640NPBF is electrically equivalent to the IRF640, with identical 200V Vdss and 18A Id ratings. Both devices use identical gate drive voltage (10V) and support ±20V maximum gate voltage. The IRF640NPBF features improved on-state resistance (150 mOhm versus 180 mOhm) and extended operating temperature range. Pin configuration and TO-220-3 package are identical, enabling direct socket replacement.

Q: What is the difference between IRF640PBF and IRF640NPBF?

A: Both are 18A, 200V N-Channel MOSFETs in TO-220-3 packages. The IRF640NPBF (Infineon) offers lower on-state resistance (150 mOhm) and wider operating temperature range (-55°C to 175°C). The IRF640PBF (Vishay) maintains the original 180 mOhm specification and operates to 150°C. IRF640PBF carries active product status, while IRF640NPBF is designated "Not For New Designs." Both are electrically interchangeable.

Q: Is the IRFB4620PBF suitable as a drop-in replacement for the IRF640?

A: Yes, with design considerations. The IRFB4620PBF is pin-compatible in TO-220-3 package and supports identical gate drive voltage (10V) and maximum gate voltage (±20V). The IRFB4620PBF is rated for 25A continuous current versus 18A for the IRF640, providing design margin. On-state resistance is significantly lower (72.5 mOhm), reducing power dissipation. Gate charge is lower (38 nC versus 72 nC), potentially requiring gate drive circuit adjustment. Input capacitance is higher (1710 pF), which may affect switching speed. The IRFB4620PBF is suitable for direct replacement in applications where improved thermal performance is beneficial.

Q: Can the IRF200B211 replace the IRF640 in all applications?

A: No. The IRF200B211 is rated for 12A continuous current, 33% below the IRF640 specification. This device is suitable only for applications where the IRF640 is over-specified or where de-rated operation is acceptable. Applications requiring the full 18A rating cannot use the IRF200B211 without circuit redesign. The IRF200B211 features lower gate charge and input capacitance, potentially simplifying gate drive requirements in reduced-current applications.

Q: What is the significance of "Not For New Designs" status on the IRF640NPBF?

A: "Not For New Designs" indicates that while the IRF640NPBF remains available and functional, the manufacturer does not recommend its use in new product development. This designation typically reflects product maturity or planned discontinuation. For legacy system support and production continuity, the IRF640NPBF remains a valid electrical equivalent. For new designs, IRF640PBF, IRFB4620PBF, or PHP20NQ20T,127 are preferred due to active product status.

Q: How do on-state resistance differences affect circuit performance?

A: On-state resistance (Rds On) directly determines power dissipation during conduction. Lower Rds On reduces heat generation and improves efficiency. The IRF640NPBF (150 mOhm) dissipates approximately 17% less power than the IRF640 (180 mOhm) at identical current levels. The IRFB4620PBF (72.5 mOhm) dissipates approximately 60% less power. In thermal-limited applications, lower Rds On substitutes extend safe operating margins. In current-limited applications, Rds On differences have minimal impact.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed—IRF640NPBF, IRF640PBF, IRF200B211, IRFB4620PBF, and PHP20NQ20T,127—are RoHS3 compliant. The IRF640PBF carries affected REACH status, while all other substitutes are REACH unaffected. For applications with strict environmental compliance requirements, IRFB4620PBF and PHP20NQ20T,127 provide full compliance without qualification.

Q: What is the impact of gate charge differences on gate drive circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Higher gate charge requires greater drive current or longer switching time. The IRF640 requires 72 nC at 10V drive. The IRF200B211 requires only 23 nC, reducing gate drive power requirements. The IRFB4620PBF requires 38 nC, providing moderate reduction. In applications with marginal gate drive capability, lower gate charge substitutes reduce switching losses and improve reliability. In applications with robust gate drive circuits, gate charge differences have minimal impact.

Q: Can the PHP20NQ20T,127 be used as a direct replacement?

A: Yes. The PHP20NQ20T,127 is rated for 20A continuous current at 200V, exceeding the IRF640 specification. Pin configuration and TO-220-3 package are identical. Gate drive voltage (10V) and maximum gate voltage (±20V) are identical. On-state resistance is lower (130 mOhm), reducing power dissipation. Gate charge is comparable (65 nC versus 72 nC). Input capacitance is higher (2470 pF), which may affect switching speed in high-frequency applications. The PHP20NQ20T,127 is suitable for direct replacement with improved current margin.

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