IRF630S N-Channel MOSFET 200V 9A Equivalent & Substitute Parts

Part Overview

The IRF630S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 9A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The IRF630S serves in switching applications requiring moderate voltage and current handling in compact surface mount form factors.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	9	A (Tc)
Rds On (Max) @ 5.4A, 10V	400	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	43	nC
Input Capacitance (Ciss) @ 25V	800	pF
Power Dissipation (Max)	3W (Ta), 74W (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
FET Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution of the IRF630S is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Equivalence Criteria:

Drain to Source Voltage (Vdss): 200V minimum
Continuous Drain Current (Id): 9A or greater
Gate Threshold Voltage (Vgs(th)): 4V nominal
Maximum Gate Voltage (Vgs): ±20V or greater
Package Type: TO-263 (D2PAK) surface mount configuration
FET Type: N-Channel MOSFET technology

Secondary Compatibility Parameters:

Rds On (Max): 400mOhm or lower (lower values indicate improved performance)
Gate Charge (Qg): 43nC or lower (lower values reduce switching losses)
Input Capacitance (Ciss): 800pF or lower
Operating Temperature Range: -55°C to 150°C minimum

Substitute parts meeting these criteria maintain functional and thermal compatibility with the original IRF630S design. Parts exceeding these specifications in current rating, power dissipation, or temperature range provide enhanced performance margins without requiring circuit redesign.

Parameter Comparison

Parameter	IRF630S	IRF630SPBF	IRF630NSTRLPBF	RCJ120N20TL	STB19NF20
Manufacturer	Vishay Siliconix	Vishay Siliconix	Infineon Technologies	Rohm Semiconductor	STMicroelectronics
Vdss (V)	200	200	200	200	200
Id @ 25°C (A)	9	9	9.3	12	15
Rds On (Max) @ 10V (mOhm)	400	400	300	325	160
Vgs(th) @ 250µA (V)	4	4	4	5.25	4
Gate Charge (Qg) @ 10V (nC)	43	43	35	15	24
Ciss @ 25V (pF)	800	800	575	740	800
Power Dissipation (Tc) (W)	74	74	82	40	90
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 175	to 150	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	LPTS	D2PAK
Product Status	Obsolete	Active	Obsolete	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Parametric Equivalent (Preferred for Pin-Compatible Replacement):

IRF630SPBF is the direct parametric equivalent to IRF630S. Both parts share identical electrical specifications across all key parameters: 200V Vdss, 9A continuous drain current, 400mOhm Rds On, and 43nC gate charge. The primary distinction is product status: IRF630SPBF is active and ROHS3 compliant, whereas IRF630S is obsolete and non-compliant. IRF630SPBF is supplied in tube packaging and maintains full functional and thermal compatibility without circuit modification.

Enhanced Performance Alternatives (Higher Current or Lower Rds On):

IRF630NSTRLPBF (Infineon) provides improved specifications with 9.3A current rating, 300mOhm Rds On (25% reduction), 35nC gate charge (19% reduction), and extended temperature range to 175°C. This part is ROHS3 compliant but classified as obsolete. The lower Rds On reduces conduction losses and heat generation.

STB19NF20 (STMicroelectronics) offers the highest performance margin with 15A current rating, 160mOhm Rds On (60% reduction), 24nC gate charge (44% reduction), and 90W power dissipation. This part is active and ROHS3 compliant, providing the most robust long-term availability and regulatory compliance.

RCJ120N20TL (Rohm Semiconductor) provides 12A current rating and 325mOhm Rds On with active product status and ROHS3 compliance. This part uses LPTS packaging rather than standard D2PAK, requiring verification of PCB footprint compatibility.

Regulatory and Compliance Considerations:

All substitute parts except IRF630S are ROHS3 compliant. For applications requiring RoHS compliance, IRF630SPBF, IRF630NSTRLPBF, RCJ120N20TL, and STB19NF20 are acceptable. For long-term procurement security, active status parts (IRF630SPBF, RCJ120N20TL, STB19NF20) are preferred over obsolete classifications.

Frequently Asked Questions (FAQ)

Q: Can IRF630SPBF be used as a direct replacement for IRF630S without circuit modification?

A: Yes. IRF630SPBF is a direct parametric equivalent with identical electrical specifications, gate drive requirements, and thermal characteristics. No circuit modification is required. The primary difference is product status and RoHS compliance.

Q: What is the advantage of using STB19NF20 instead of IRF630SPBF?

A: STB19NF20 provides superior performance through lower on-resistance (160mOhm vs. 400mOhm), reduced gate charge (24nC vs. 43nC), and higher current rating (15A vs. 9A). These improvements reduce conduction losses, switching losses, and thermal stress. STB19NF20 is also active status with confirmed long-term availability.

Q: Is RCJ120N20TL compatible with existing PCB layouts designed for IRF630S?

A: RCJ120N20TL uses LPTS packaging instead of standard D2PAK. While electrical parameters are compatible, the physical footprint differs. PCB layout verification is required before substitution.

Q: What does "Rds On" mean and why is it important for substitution?

A: Rds On is the on-state drain-to-source resistance when the MOSFET is fully conducting. Lower Rds On values reduce power dissipation and heat generation. Substitute parts with equal or lower Rds On maintain or improve thermal performance.

Q: Can I use a substitute part with higher current rating than the original IRF630S?

A: Yes. Parts with higher current ratings (such as STB19NF20 at 15A) are fully compatible and provide additional performance margin. The circuit will operate safely as long as the voltage rating (200V minimum) and package type are maintained.

Q: Why is IRF630NSTRLPBF listed as obsolete if it has better specifications than IRF630S?

A: Product status reflects manufacturer production and support status, not performance quality. Obsolete parts may still be available from inventory but lack manufacturer design support and long-term procurement guarantees. For new designs, active status parts are preferred.

Q: What is gate charge (Qg) and how does it affect circuit design?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and allows faster switching speeds. Substitute parts with lower Qg values improve efficiency but do not require circuit redesign if the gate driver has adequate current capacity.

Q: Are all substitute parts rated for the same temperature range as IRF630S?

A: No. IRF630S operates from -55°C to 150°C. IRF630NSTRLPBF extends to 175°C. RCJ120N20TL is specified to 150°C maximum. Verify temperature range requirements for your application before substitution.

Q: What does ROHS3 compliance mean for component selection?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. For applications requiring regulatory compliance, ROHS3 compliant parts are mandatory.

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