IRF630B_FP001 Equivalent & Substitute Parts

Part Overview

The IRF630B_FP001 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage and 9A continuous drain current in a Through Hole TO-220-3 package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing applications and new designs. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	9	A
Rds On (Max) @ Id, Vgs	400 mOhm @ 4.5A, 10V	—
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	29	nC @ 10V
Input Capacitance (Ciss) @ Vds	720	pF @ 25V
Power Dissipation (Max)	72	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-220-3	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF630B_FP001 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must equal or exceed 9A at 25°C
Gate Threshold Voltage (Vgs(th)): Must be 4V at 250µA
Rds On characteristics: Must support operation at specified gate drive voltage (10V)
Operating Temperature Range: Must encompass -55°C to 150°C minimum

Mechanical Compatibility Requirements:

Mounting Type: Through Hole
Package Type: TO-220-3 or equivalent footprint variants (TO-220AB, I2PAK)

Regulatory & Compliance Considerations:

Product Status: Active or Obsolete
RoHS Compliance: Preferred for new designs
Moisture Sensitivity Level: 1 (Unlimited)

All identified substitute parts maintain N-Channel MOSFET technology with Metal Oxide construction and satisfy the electrical parameters required for direct functional replacement.

Parameter Comparison

Parameter	IRF630B_FP001 (onsemi)	IRF630 (Harris)	IRF630L (Vishay)	IRF630NPBF (Infineon)	IRF630PBF (Vishay)
Manufacturer	onsemi	Harris Corporation	Vishay Siliconix	Infineon Technologies	Vishay Siliconix
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss	200V	200V	200V	200V	200V
Id @ 25°C	9A	9A	9A	9.3A	9A
Rds On (Max) @ 10V	400 mOhm @ 4.5A	400 mOhm @ 5.4A	400 mOhm @ 5.4A	300 mOhm @ 5.4A	400 mOhm @ 5.4A
Vgs(th) @ 250µA	4V	4V	4V	4V	4V
Gate Charge (Qg) @ 10V	29 nC	43 nC	43 nC	35 nC	43 nC
Ciss @ 25V	720 pF	800 pF	800 pF	575 pF	800 pF
Power Dissipation (Max)	72W	—	—	82W	74W
Operating Temperature	-55 to 150°C	—	-55 to 150°C	-55 to 175°C	-55 to 150°C
Package	TO-220-3	TO-220AB	I2PAK (TO-262-3)	TO-220AB	TO-220AB
Product Status	Obsolete	Obsolete	Active	Active	Active
RoHS Status	—	Non-compliant	Non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Active Production and New Designs:

IRF630NPBF (Infineon Technologies) is the primary recommended substitute. This part is Active status with ROHS3 compliance, providing long-term availability and regulatory alignment. The IRF630NPBF delivers superior electrical performance with 300 mOhm Rds On (versus 400 mOhm on the original), lower gate charge (35 nC), and reduced input capacitance (575 pF), resulting in improved switching efficiency. Extended operating temperature range to 175°C provides additional thermal margin. TO-220AB packaging maintains mechanical compatibility with standard through-hole PCB layouts.

Secondary Alternative:

IRF630PBF (Vishay Siliconix) is an Active status substitute with ROHS3 compliance. Electrical parameters match the original IRF630B_FP001 specification (400 mOhm Rds On, 43 nC gate charge), ensuring direct functional equivalence. TO-220AB packaging supports standard through-hole mounting.

For Legacy System Maintenance:

IRF630 (Harris Corporation) and IRF630L (Vishay Siliconix) are functionally equivalent but carry Obsolete status. IRF630L offers Active status classification and maintains identical electrical specifications to the original part. Both support through-hole mounting in TO-220AB and I2PAK packages respectively.

Compliance Considerations:

For applications subject to RoHS requirements, IRF630NPBF and IRF630PBF are mandatory selections. Both parts carry ROHS3 compliance certification. IRF630 (Harris) and IRF630L (Vishay) are RoHS non-compliant and unsuitable for regulated applications.

Frequently Asked Questions (FAQ)

Q: Can IRF630NPBF directly replace IRF630B_FP001 in existing PCB designs?

A: Yes. IRF630NPBF maintains identical electrical specifications (200V Vdss, 9.3A Id, 4V Vgs(th)) and uses TO-220AB packaging, which is mechanically compatible with TO-220-3 footprints. Pin configuration and thermal characteristics support direct substitution without PCB modification.

Q: What is the difference between TO-220-3 and TO-220AB packaging?

A: TO-220-3 and TO-220AB are functionally equivalent through-hole packages with identical pin spacing and thermal performance. Both accommodate standard TO-220 mounting hardware and PCB layouts. The designation difference reflects manufacturing variants from different suppliers.

Q: Why does IRF630NPBF have lower Rds On (300 mOhm) than the original part (400 mOhm)?

A: Lower Rds On represents improved semiconductor processing technology. This reduction decreases conduction losses and heat generation during operation, providing performance enhancement without compromising compatibility. Applications benefit from reduced power dissipation and improved efficiency.

Q: Is IRF630L suitable for new production designs?

A: IRF630L carries Active product status and supports new designs. However, the I2PAK (TO-262-3) package differs from the original TO-220-3 footprint, requiring PCB layout modification. For designs requiring minimal changes, IRF630NPBF or IRF630PBF in TO-220AB packaging are preferred.

Q: What compliance certifications are required for regulated applications?

A: RoHS3 compliance is mandatory for applications subject to European Union Restriction of Hazardous Substances regulations. IRF630NPBF and IRF630PBF both carry ROHS3 certification. IRF630 (Harris) and IRF630L (Vishay) are RoHS non-compliant and unsuitable for regulated markets.

Q: Can obsolete parts (IRF630, IRF630 Harris) be used in new designs?

A: Obsolete parts carry supply risk and are not recommended for new production designs. Active status parts (IRF630NPBF, IRF630PBF, IRF630L) ensure long-term availability and ongoing manufacturer support. Obsolete parts are suitable only for legacy system maintenance where existing inventory exists.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. IRF630NPBF (35 nC) requires less gate drive energy than the original IRF630B_FP001 (29 nC) and other 43 nC variants. Lower gate charge reduces driver power consumption and enables faster switching transitions. Existing gate drive circuits accommodate these variations without modification.

Q: What thermal performance differences exist between substitute parts?

A: IRF630NPBF provides 82W maximum power dissipation and -55°C to 175°C operating range, exceeding the original 72W and -55°C to 150°C specification. IRF630PBF delivers 74W dissipation within -55°C to 150°C range. All parts support identical thermal management approaches through standard TO-220 heatsink mounting.

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