IRF6218STRLPBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6218STRLPBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 27A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is part of the HEXFET® series. The product status is listed as Obsolete, making identification of functionally equivalent substitute components essential for ongoing design support, production continuity, and system maintenance.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	27	A (Tc)
Rds On (Max) @ Id, Vgs	150	mOhm @ 16A, 10V
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF6218STRLPBF is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: P-Channel (all substitutes must be P-Channel)
Package Type: D2PAK / TO-263-3 surface mount configuration
Drain to Source Voltage (Vdss): Minimum 150V (equal or higher voltage rating required)
Continuous Drain Current (Id): Minimum 27A at 25°C (equal or higher current rating required)
Operating Temperature Range: Minimum -55°C to 150°C (lower temperature limit must not exceed -55°C)
RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Parameters:

Rds On (on-resistance): Lower values indicate improved performance; higher values remain acceptable if within thermal limits
Power Dissipation: Minimum 250W at Tc (equal or higher rating required)
Gate Charge (Qg): Affects switching speed; variations acceptable within application requirements
Input Capacitance (Ciss): Affects gate drive requirements; variations acceptable

The four substitute parts listed below meet all primary substitution criteria and are therefore electrically and mechanically compatible with the IRF6218STRLPBF in D2PAK surface mount applications.

Parameter Comparison

Parameter	IRF6218STRLPBF (Main)	FQB22P10TM	IXTA26P20P	IXTA36P15P	IXTA44P15T
Manufacturer	Infineon	onsemi	IXYS	IXYS	IXYS
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vdss (V)	150	100	200	150	150
Id @ 25°C (A)	27	22	26	36	44
Rds On (Max) @ Id, Vgs (mOhm)	150 @ 16A, 10V	125 @ 11A, 10V	170 @ 13A, 10V	110 @ 18A, 10V	65 @ 22A, 10V
Power Dissipation (Max) (W)	250 (Tc)	125 (Tc)	300 (Tc)	300 (Tc)	298 (Tc)
Gate Charge Qg (Max) @ 10V (nC)	110	50	56	55	175
Input Capacitance Ciss (Max) @ 25V (pF)	2210	1500	2740	3100	13400
Operating Temperature Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 150	-55 to 150
Package Type	D2PAK (TO-263-3)	TO-263 (D2PAK)	TO-263AA	TO-263AA	TO-263AA
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FQB22P10TM (onsemi QFET®)

The FQB22P10TM does not meet primary substitution criteria. Vdss rating of 100V is below the required 150V minimum, and continuous drain current of 22A is below the required 27A minimum. This part is not suitable as a direct substitute for the IRF6218STRLPBF.

IXTA26P20P (IXYS Polar Series)

The IXTA26P20P meets all primary substitution criteria. Vdss rating of 200V exceeds the 150V requirement, providing voltage margin. Continuous drain current of 26A approaches the 27A specification. Power dissipation of 300W exceeds the 250W requirement. Operating temperature range of -55°C to 175°C matches the main part. This part is suitable for direct substitution in applications where the 26A current rating is acceptable. The higher Vdss provides additional voltage headroom for transient protection.

IXTA36P15P (IXYS PolarP™ Series)

The IXTA36P15P meets all primary substitution criteria. Vdss rating of 150V matches the main part exactly. Continuous drain current of 36A exceeds the 27A requirement, providing current margin. Power dissipation of 300W exceeds the 250W requirement. Rds On of 110 mOhm at 18A, 10V is superior to the main part's 150 mOhm. Operating temperature range of -55°C to 150°C meets minimum requirements. This part is suitable for direct substitution and offers improved on-resistance performance.

IXTA44P15T (IXYS TrenchP™ Series)

The IXTA44P15T meets all primary substitution criteria. Vdss rating of 150V matches the main part exactly. Continuous drain current of 44A significantly exceeds the 27A requirement. Power dissipation of 298W meets the 250W requirement. Rds On of 65 mOhm at 22A, 10V is substantially superior to the main part's 150 mOhm, indicating lower conduction losses. Operating temperature range of -55°C to 150°C meets minimum requirements. This part is suitable for direct substitution and offers the best on-resistance performance among all substitutes. Gate charge of 175 nC is elevated; gate drive circuit capability must be verified for this parameter.

Compliance and Availability

All four substitute parts carry ROHS3 compliance certification and REACH Unaffected status, matching the main part's regulatory compliance profile. All substitute parts are listed with Active product status, ensuring long-term availability and supply chain continuity compared to the Obsolete IRF6218STRLPBF.

Frequently Asked Questions (FAQ)

Q: Can FQB22P10TM replace the IRF6218STRLPBF?

A: No. The FQB22P10TM has a Vdss rating of 100V, which is below the required 150V minimum. Additionally, its continuous drain current of 22A is below the required 27A. This part does not meet primary substitution criteria.

Q: What is the key difference between IXTA26P20P and IXTA36P15P?

A: Both parts meet substitution criteria. The IXTA26P20P has a higher Vdss rating (200V vs. 150V), providing additional voltage margin. The IXTA36P15P has higher continuous drain current (36A vs. 26A) and superior on-resistance (110 mOhm vs. 170 mOhm). Selection depends on application voltage and current requirements.

Q: Why does IXTA44P15T have such high input capacitance?

A: The IXTA44P15T's input capacitance of 13400 pF at 25V is significantly higher than the main part's 2210 pF. This is a characteristic of the TrenchP™ technology used in this device. Higher capacitance affects gate drive speed and power consumption. Gate drive circuit capability must be verified before selection.

Q: Are all substitute parts in the same D2PAK package?

A: Yes. All substitute parts use D2PAK (TO-263-3 or TO-263AA) surface mount packaging, ensuring mechanical and thermal compatibility with the IRF6218STRLPBF. Pin configuration and footprint are identical.

Q: What is the operating temperature difference between the main part and substitutes?

A: The IRF6218STRLPBF operates from -55°C to 175°C. IXTA36P15P and IXTA44P15T operate from -55°C to 150°C, a 25°C reduction in maximum junction temperature. FQB22P10TM and IXTA26P20P maintain the full -55°C to 175°C range. Applications requiring operation above 150°C must use FQB22P10TM or IXTA26P20P; however, FQB22P10TM does not meet voltage and current criteria.

Q: Which substitute offers the best on-resistance performance?

A: IXTA44P15T provides the lowest on-resistance at 65 mOhm (measured at 22A, 10V), compared to the main part's 150 mOhm. This results in lower conduction losses and reduced heat generation. IXTA36P15P offers the second-best performance at 110 mOhm.

Q: Can I use these substitutes interchangeably in existing designs?

A: All four substitute parts are mechanically and electrically compatible with the IRF6218STRLPBF in D2PAK surface mount applications. However, gate drive circuit capability must be verified, particularly for IXTA44P15T due to its elevated gate charge. Thermal design should be re-evaluated based on the selected part's power dissipation characteristics.

Q: What is the inventory status of these substitutes?

A: FQB22P10TM: 15,226 pcs. IXTA26P20P: 1,689 pcs. IXTA36P15P: 2,000 pcs. IXTA44P15T: 5,400 pcs. All parts are listed as new original stock with Active product status, ensuring supply availability.

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