IRF6218PBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6218PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 27A continuous drain current at 25°C. This device is part of the HEXFET® series and features a TO-220AB through-hole package suitable for power switching applications. The IRF6218PBF is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220-3 package format.

Substiute Parts

IRF6218PBF

Infineon TechnologiesIn Stock: 10284IRF6218PBF Datasheet

Current PartRFQ

IXTP36P15P

IXYSIn Stock: 2289IXTP36P15P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF6218PBF are identified based on strict electrical and mechanical parameter alignment. The substitution criteria are:

Primary Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 150V
• FET Type: Must be P-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Package: Must be TO-220-3 through-hole configuration
• Mounting Type: Must be through-hole

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Substitute must meet or exceed 27A @ 25°C
• Gate Threshold Voltage: Must be within acceptable switching range
• Power Dissipation: Must support thermal requirements of the application
• Operating Temperature Range: Must encompass or match the -55°C to 175°C specification

The IXTP36P15P qualifies as a direct substitute based on matching Vdss (150V), P-Channel configuration, MOSFET technology, and TO-220-3 package. The substitute provides enhanced current capability (36A vs. 27A) and improved power dissipation (300W vs. 250W), making it suitable for applications requiring the IRF6218PBF.

Parameter Comparison

Engineering Selection Recommendations

The IXTP36P15P is an active-status substitute for the obsolete IRF6218PBF. Both devices are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. The IXTP36P15P provides superior electrical performance with 33% higher continuous drain current (36A vs. 27A) and 20% increased power dissipation capability (300W vs. 250W). The substitute features lower on-resistance (110 mOhm vs. 150 mOhm) and reduced gate charge (55 nC vs. 110 nC), resulting in improved switching efficiency and reduced drive circuit requirements.

The operating temperature range of the IXTP36P15P extends to 150°C maximum junction temperature, compared to 175°C for the IRF6218PBF. Applications requiring operation above 150°C must verify thermal management compatibility. Both devices share identical Vdss (150V), P-Channel configuration, MOSFET technology, and TO-220-3 package format, ensuring mechanical and electrical interchangeability in through-hole PCB designs.

Frequently Asked Questions (FAQ)

Q: Can the IXTP36P15P directly replace the IRF6218PBF in existing designs?

A: Yes. Both devices share identical drain-to-source voltage (150V), P-Channel configuration, MOSFET technology, and TO-220-3 package. Mechanical mounting and electrical interface compatibility are maintained. The IXTP36P15P provides enhanced current and power dissipation ratings, making it suitable for the same applications.

Q: What are the key electrical differences between these parts?

A: The IXTP36P15P offers higher continuous drain current (36A vs. 27A), lower on-resistance (110 mOhm vs. 150 mOhm), reduced gate charge (55 nC vs. 110 nC), and increased power dissipation (300W vs. 250W). The gate threshold voltage is slightly lower (4.5V vs. 5V). These differences favor the IXTP36P15P for applications requiring improved efficiency and thermal performance.

Q: Are there temperature range limitations when substituting?

A: The IXTP36P15P maximum junction temperature is 150°C, while the IRF6218PBF reaches 175°C. Applications operating above 150°C require verification that thermal management remains adequate with the substitute device. Both devices operate at -55°C minimum temperature.

Q: Do both parts meet current compliance standards?

A: Yes. Both the IRF6218PBF and IXTP36P15P are ROHS3 compliant and REACH unaffected. Moisture sensitivity level is 1 (unlimited) for both devices, indicating no special handling requirements during storage or assembly.

Q: What is the impact of lower gate charge on circuit design?

A: The IXTP36P15P gate charge is 55 nC compared to 110 nC for the IRF6218PBF. Lower gate charge reduces drive circuit power consumption and enables faster switching transitions. Existing gate drive circuits designed for the IRF6218PBF will operate with improved performance margins when driving the IXTP36P15P.

Q: How do the on-resistance specifications affect application performance?

A: The IXTP36P15P on-resistance of 110 mOhm (at 18A, 10V) is lower than the IRF6218PBF specification of 150 mOhm (at 16A, 10V). Lower on-resistance reduces conduction losses and heat generation, improving overall power conversion efficiency. This benefit is particularly significant in high-current switching applications.