IRF6216PBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6216PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 2.2A continuous drain current at 25°C. The device is housed in an 8-SO surface mount package and is part of the HEXFET® series. This part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRF6216PBF serves in applications requiring P-channel switching and amplification at moderate voltage and current levels. Discontinuation status necessitates identification of functionally compatible alternatives that maintain electrical and mechanical compatibility with existing designs.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	150	V
Current - Continuous Drain (Id) @ 25°C	2.2	A (Ta)
Rds On (Max) @ Id, Vgs	240	mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	49	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1280	pF @ 25V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF6216PBF are identified based on strict electrical and mechanical parameter alignment. The substitution logic is organized into two categories:

Category 1: Direct Electrical Equivalents (Same Vdss and Id Rating)

Parts meeting the following criteria are classified as direct equivalents:

Drain to Source Voltage (Vdss): 150V
Continuous Drain Current (Id) @ 25°C: 2.2A
Package Type: 8-SOIC surface mount
FET Type: P-Channel MOSFET

Parts in this category: FDS86267P and SI4455DY-T1-GE3

Category 2: Higher Current Capability (Same Vdss, Higher Id)

Parts meeting the following criteria are classified as higher-performance alternatives:

Drain to Source Voltage (Vdss): 150V
Continuous Drain Current (Id) @ 25°C: Greater than 2.2A
FET Type: P-Channel MOSFET
Mounting Type: Surface Mount

Parts in this category: IXTY10P15T (10A rating, TO-252 package)

Category 3: Lower Voltage Rating (Lower Vdss, Higher Id)

Parts meeting the following criteria are classified as lower-voltage alternatives suitable only for reduced voltage applications:

Drain to Source Voltage (Vdss): Less than 150V
Continuous Drain Current (Id) @ 25°C: Greater than 2.2A
FET Type: P-Channel MOSFET

Parts in this category: FDS6375 (20V rating, 8A current)

Parameter Comparison

Parameter	IRF6216PBF	FDS86267P	SI4455DY-T1-GE3	IXTY10P15T	FDS6375
Manufacturer	Infineon	onsemi	Vishay Siliconix	IXYS	onsemi
Product Status	Discontinued	Active	Active	Active	Active
Vdss (V)	150	150	150	150	20
Id @ 25°C (A)	2.2	2.2	2.0	10	8
Rds On (Max) (mOhm)	240 @ 1.3A, 10V	255 @ 2.2A, 10V	295 @ 4A, 10V	350 @ 5A, 10V	24 @ 8A, 4.5V
Vgs(th) (Max) (V)	5 @ 250µA	4 @ 250µA	4 @ 250µA	4.5 @ 250µA	1.5 @ 250µA
Gate Charge Qg (Max) (nC)	49 @ 10V	16 @ 10V	42 @ 10V	36 @ 10V	36 @ 4.5V
Vgs (Max) (V)	±20	±25	±20	±15	±8
Ciss (Max) (pF)	1280 @ 25V	1130 @ 75V	1190 @ 50V	2210 @ 25V	2694 @ 10V
Power Dissipation (Max) (W)	2.5 (Ta)	1.0 (Ta)	5.9 (Tc)	83 (Tc)	2.5 (Ta)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package	8-SOIC	8-SOIC	8-SOIC	TO-252-3	8-SOIC
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (Same Electrical and Mechanical Specifications):

FDS86267P (onsemi) is the primary direct substitute for IRF6216PBF. Both devices share identical Vdss (150V) and Id (2.2A) ratings with 8-SOIC packaging. FDS86267P is currently in active production status with 10,200 units in stock. Electrical parameters are closely matched: Rds On is 255 mOhm versus 240 mOhm (within 6% variance), and gate charge is significantly lower at 16 nC versus 49 nC, resulting in improved switching performance. Operating temperature range is identical (-55°C to 150°C). All compliance certifications match: ROHS3 Compliant, MSL 1, REACH Unaffected, and EAR99 classification.

SI4455DY-T1-GE3 (Vishay Siliconix) is a secondary direct substitute with identical Vdss (150V) and 8-SOIC packaging. Continuous drain current is rated at 2.0A, representing a 9% reduction from the 2.2A specification. This part is actively produced with 10,300 units in stock. Gate charge (42 nC) is lower than the original part, and Rds On (295 mOhm) is slightly higher. Operating temperature and compliance certifications are identical to the original part.

For Higher Current Applications (Same Voltage, Increased Current Capacity):

IXTY10P15T (IXYS) provides 150V Vdss with 10A continuous drain current, representing a 4.5× increase in current handling. This part uses TO-252-3 (DPAK) packaging instead of 8-SOIC, requiring PCB layout modification. Power dissipation capability is significantly higher at 83W (Tc) versus 2.5W (Ta). This device is suitable for applications requiring higher current capacity at the same voltage rating. Active production status with 890 units in stock. All compliance certifications are met.

For Lower Voltage Applications Only:

FDS6375 (onsemi) is suitable only for applications operating at 20V or below. This part provides 8A continuous drain current with significantly improved Rds On (24 mOhm) and lower gate charge (36 nC). Operating temperature extends to 175°C. This substitute is not compatible with designs requiring 150V operation. Active production with 80,299 units in stock.

Compliance and Availability Summary:

All substitute parts maintain ROHS3 compliance, MSL 1 rating, REACH Unaffected status, and EAR99 classification. All substitute parts are in active production status, ensuring long-term availability compared to the discontinued IRF6216PBF.

Frequently Asked Questions (FAQ)

Q1: Can FDS86267P be used as a direct drop-in replacement for IRF6216PBF?

A: Yes. FDS86267P meets all critical electrical parameters: 150V Vdss, 2.2A Id, and 8-SOIC package. Rds On (255 mOhm) is within 6% of the original specification (240 mOhm). Gate charge is lower (16 nC versus 49 nC), which improves switching speed. No circuit modifications are required for direct substitution.

Q2: What is the difference between SI4455DY-T1-GE3 and FDS86267P?

A: Both are 150V, 8-SOIC P-channel MOSFETs. SI4455DY-T1-GE3 has a slightly lower continuous drain current rating (2.0A versus 2.2A) and higher Rds On (295 mOhm versus 255 mOhm). FDS86267P has lower gate charge (16 nC versus 42 nC), resulting in faster switching. For applications requiring the full 2.2A specification, FDS86267P is preferred.

Q3: Why is IXTY10P15T in a different package (TO-252)?

A: IXTY10P15T uses TO-252-3 (DPAK) packaging to accommodate its higher power dissipation capability (83W versus 2.5W) and higher current rating (10A versus 2.2A). The larger package provides better thermal performance. PCB layout must be modified to accommodate the different pin configuration and larger footprint.

Q4: Can FDS6375 replace IRF6216PBF in a 150V circuit?

A: No. FDS6375 is rated for maximum 20V Vdss and cannot be used in circuits operating at 150V. This part is suitable only for applications with voltage requirements of 20V or below. Using FDS6375 in a 150V circuit will result in device failure.

Q5: What are the key parameters that determine substitutability?

A: The primary parameters are: (1) Drain-to-Source Voltage (Vdss) must be equal to or greater than the original specification, (2) Continuous Drain Current (Id) must be equal to or greater than the original specification, (3) FET Type must be P-Channel, (4) Package must be compatible with PCB layout (8-SOIC preferred for direct replacement), and (5) Operating temperature range must cover the application requirements.

Q6: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (FDS86267P, SI4455DY-T1-GE3, IXTY10P15T, and FDS6375) are ROHS3 Compliant with MSL 1 (Unlimited) rating, matching the original IRF6216PBF specifications.

Q7: Which substitute part has the lowest on-resistance (Rds On)?

A: FDS6375 has the lowest Rds On at 24 mOhm (measured at 8A, 4.5V). However, this part operates at only 20V maximum and cannot replace IRF6216PBF in 150V applications. Among 150V-rated substitutes, FDS86267P has the lowest Rds On at 255 mOhm.

Q8: What is the inventory status of substitute parts?

A: FDS6375 has the highest inventory (80,299 units), followed by SI4455DY-T1-GE3 (10,300 units) and FDS86267P (10,200 units). IXTY10P15T has lower inventory (890 units). All parts are in active production status.

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