IRF6215STRR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6215STRR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 13A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, making identification of functional equivalents and substitutes essential for ongoing design support and production continuity. The HEXFET® series construction provides reliable switching performance in power management applications requiring P-channel switching capability.

Substiute Parts

IRF6215STRR

Infineon TechnologiesIn Stock: 1096IRF6215STRR Datasheet

Current PartRFQ

IRF6215STRLPBF

Infineon TechnologiesIn Stock: 4006IRF6215STRLPBF Datasheet

Parametric EquivalentRFQ

FQB12P20TM

onsemiIn Stock: 6864FQB12P20TM Datasheet

MFR RecommendedRFQ

IXTA15P15T

IXYSIn Stock: 881IXTA15P15T Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF6215STRR is determined by the following critical parameters:

Primary Matching Criteria:

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain-to-Source Voltage (Vdss): 150V minimum
• Continuous Drain Current (Id): 13A minimum
• Package Type: D2PAK (TO-263) surface mount
• Drive Voltage: 10V gate drive compatibility

Substitution Categories:

Parametric Equivalent: IRF6215STRLPBF matches all electrical specifications identically to the main part. This substitute differs only in packaging format (Cut Tape & Digi-Reel) and RoHS compliance status (ROHS3 Compliant vs. non-compliant).

Manufacturer Recommended Substitutes: FQB12P20TM and IXTA15P15T provide functional substitution with relaxed or enhanced specifications. These parts maintain P-channel topology, D2PAK packaging, and 10V gate drive compatibility while offering variations in voltage rating, current capacity, and on-resistance characteristics.

Parameter Comparison

Engineering Selection Recommendations

IRF6215STRLPBF Selection: This part is the direct parametric equivalent of IRF6215STRR with identical electrical performance. Selection is appropriate when exact specification matching is required and RoHS3 compliance is acceptable. Both parts carry obsolete product status; however, IRF6215STRLPBF maintains higher inventory availability (3900 pcs vs. 986 pcs).

FQB12P20TM Selection: This onsemi QFET® device is an active product with enhanced voltage rating (200V vs. 150V) and improved thermal performance (120W vs. 110W). Selection is appropriate for applications where higher voltage margin is beneficial. The 11.5A continuous current rating is within acceptable range for 13A-rated designs. Higher on-resistance (470mOhm vs. 290mOhm) requires thermal analysis for power dissipation-sensitive applications. Lower gate charge (40nC vs. 66nC) reduces gate drive power requirements.

IXTA15P15T Selection: This IXYS TrenchP™ device is an active product with superior current capacity (15A vs. 13A) and lower on-resistance (240mOhm vs. 290mOhm), resulting in reduced power dissipation. Selection is appropriate for applications requiring enhanced performance margin or thermal efficiency. Maximum operating temperature is 150°C (vs. 175°C for IRF6215STRR), which may be limiting in high-temperature environments. Higher input capacitance (3650pF vs. 860pF) increases gate drive requirements.

All three substitute options maintain D2PAK packaging compatibility and 10V gate drive voltage specification, enabling direct board-level substitution with appropriate thermal and electrical verification.

Frequently Asked Questions (FAQ)

Q: Can IRF6215STRLPBF be used as a direct replacement for IRF6215STRR?

A: Yes. IRF6215STRLPBF is a parametric equivalent with identical electrical specifications. The primary differences are packaging format (Cut Tape & Digi-Reel vs. bulk) and RoHS compliance status. Both parts are classified as obsolete.

Q: What are the key differences between FQB12P20TM and IRF6215STRR?

A: FQB12P20TM has higher voltage rating (200V vs. 150V), lower gate charge (40nC vs. 66nC), and higher on-resistance (470mOhm vs. 290mOhm). Continuous current is slightly lower (11.5A vs. 13A). FQB12P20TM is an active product from onsemi.

Q: Is IXTA15P15T suitable for applications designed for IRF6215STRR?

A: IXTA15P15T provides enhanced performance with higher current capacity (15A vs. 13A) and lower on-resistance (240mOhm vs. 290mOhm). Maximum operating temperature is 150°C (vs. 175°C). Input capacitance is significantly higher (3650pF vs. 860pF), requiring gate drive circuit verification. IXTA15P15T is an active product.

Q: Are all substitute parts available in D2PAK packaging?

A: Yes. IRF6215STRLPBF, FQB12P20TM, and IXTA15P15T are all supplied in D2PAK (TO-263) surface mount packages, enabling direct board-level substitution.

Q: What is the impact of higher on-resistance in FQB12P20TM?

A: Higher on-resistance (470mOhm vs. 290mOhm) increases power dissipation during conduction. For applications operating at maximum current (13A), power dissipation increases proportionally. Thermal analysis is required to confirm acceptability within system cooling constraints.

Q: Which substitute part has the lowest gate charge?

A: FQB12P20TM has the lowest gate charge at 40nC (vs. 66nC for IRF6215STRR and 48nC for IXTA15P15T). Lower gate charge reduces gate drive power consumption and enables faster switching transitions.

Q: Can these parts be used interchangeably on the same PCB?

A: All substitute parts use D2PAK packaging with identical pinout (Gate, Drain, Source). Board-level substitution is mechanically compatible. Electrical verification is required to confirm suitability for specific circuit operating conditions, particularly regarding on-resistance, gate charge, and thermal performance.

Q: What is the RoHS compliance status of available substitutes?

A: IRF6215STRLPBF, FQB12P20TM, and IXTA15P15T are all ROHS3 Compliant. The original IRF6215STRR is RoHS non-compliant.