IRF6215SPBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6215SPBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 13A continuous drain current in a surface mount D2PAK package. This device is part of the HEXFET® series and is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IRF6215SPBF

Infineon TechnologiesIn Stock: 1672IRF6215SPBF Datasheet

Current PartRFQ

FQB12P20TM

onsemiIn Stock: 6864FQB12P20TM Datasheet

MFR RecommendedRFQ

IXTA15P15T

IXYSIn Stock: 881IXTA15P15T Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF6215SPBF is determined by the following critical parameters:

Primary Substitution Criteria:

• FET Type: P-Channel topology
• Drain-to-Source Voltage (Vdss): Minimum 150V (equal or higher rating acceptable)
• Continuous Drain Current (Id): Minimum 13A at 25°C (equal or higher rating acceptable)
• Package Type: Surface mount D2PAK/TO-263 form factor
• Drive Voltage: 10V gate drive compatibility
• Operating Temperature Range: Minimum -55°C to 150°C (IRF6215SPBF extends to 175°C)

Compliance Requirements:

• RoHS3 compliance
• MSL Level 1 (Unlimited moisture sensitivity)
• REACH unaffected status

The identified substitute parts meet or exceed the electrical performance envelope of the IRF6215SPBF while maintaining package compatibility and regulatory compliance.

Parameter Comparison

Engineering Selection Recommendations

FQB12P20TM (onsemi QFET® Series)

This substitute provides higher voltage rating (200V vs. 150V) with active product status. The 11.5A continuous drain current is slightly below the IRF6215SPBF specification but remains within acceptable operating margins for most applications. Higher on-resistance (470 mOhm) and lower gate charge (40 nC) characteristics differ from the main part. Operating temperature maximum of 150°C is 25°C lower than the IRF6215SPBF. This part is suitable for applications where voltage headroom is beneficial and thermal management accommodates the reduced temperature rating.

IXTA15P15T (IXYS TrenchP™ Series)

This substitute matches the 150V voltage rating and exceeds the drain current specification at 15A. Superior on-resistance (240 mOhm) and lower gate charge (48 nC) provide improved switching performance. Higher input capacitance (3650 pF) requires consideration in gate drive circuit design. Operating temperature maximum of 150°C matches FQB12P20TM. Active product status and full compliance certifications support long-term availability. This part is suitable for applications prioritizing lower on-resistance and higher current capability within the same voltage class.

Both substitutes maintain D2PAK surface mount packaging, RoHS3 compliance, and MSL Level 1 rating. Selection between alternatives depends on specific application requirements for voltage margin, current headroom, thermal performance, and gate drive characteristics.

Frequently Asked Questions (FAQ)

Q: Can FQB12P20TM directly replace IRF6215SPBF in all applications?

A: FQB12P20TM is electrically compatible as a P-Channel MOSFET in D2PAK packaging with matching 10V gate drive voltage. The 200V rating provides additional voltage margin. However, the 11.5A current rating is 1.5A lower than the IRF6215SPBF specification, and the 150°C maximum junction temperature is 25°C lower. Applications operating near the 13A current limit or above 150°C junction temperature require thermal analysis before substitution.

Q: What are the key differences between FQB12P20TM and IXTA15P15T?

A: FQB12P20TM offers higher voltage rating (200V) with lower current (11.5A) and higher on-resistance (470 mOhm). IXTA15P15T maintains 150V voltage matching the original part with higher current (15A) and superior on-resistance (240 mOhm). Gate charge differs significantly: FQB12P20TM at 40 nC versus IXTA15P15T at 48 nC. Input capacitance is substantially higher in IXTA15P15T (3650 pF vs. 1200 pF), affecting gate drive circuit design.

Q: Are both substitutes available in the same D2PAK package?

A: Yes. Both FQB12P20TM and IXTA15P15T use TO-263 D2PAK surface mount packaging with identical pin configuration and PCB footprint compatibility to IRF6215SPBF. No layout modifications are required for package substitution.

Q: What is the impact of higher input capacitance in IXTA15P15T?

A: Input capacitance (Ciss) of 3650 pF in IXTA15P15T is significantly higher than IRF6215SPBF (860 pF) and FQB12P20TM (1200 pF). This increases gate charge requirements and may demand higher gate drive current or modified timing in switching circuits. Gate drive circuit design review is necessary before substitution.

Q: Do both substitutes meet the same compliance requirements as IRF6215SPBF?

A: Yes. Both FQB12P20TM and IXTA15P15T are ROHS3 compliant, MSL Level 1 (Unlimited), and REACH unaffected, matching the regulatory status of IRF6215SPBF.

Q: Which substitute is better for high-temperature applications?

A: Neither substitute extends to the IRF6215SPBF maximum of 175°C; both are rated to 150°C maximum junction temperature. For applications requiring operation above 150°C, alternative parts outside this substitute list must be evaluated.

Q: What is the on-resistance impact of substitution?

A: IXTA15P15T provides superior on-resistance (240 mOhm) compared to IRF6215SPBF (290 mOhm), reducing conduction losses. FQB12P20TM has higher on-resistance (470 mOhm), increasing conduction losses. Power dissipation analysis is required for applications sensitive to on-resistance variation.