IRF6215S P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6215S is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 13A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, making equivalent substitute parts necessary for new designs and production continuity. The IRF6215S belongs to the HEXFET® series and is designed for applications requiring moderate voltage and current switching capabilities in a compact surface mount form factor.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	13	A
On-State Resistance (Rds On) @ 6.6A, 10V	290	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	66	nC
Power Dissipation (Tc)	110	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IRF6215S are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

FET Type: P-Channel configuration
Package Type: D2PAK (TO-263-3) surface mount
Drain to Source Voltage (Vdss): 150V or higher
Continuous Drain Current (Id): 13A or higher
On-State Resistance (Rds On): Equal to or lower than 290 mOhm
Operating Temperature Range: Minimum -55°C to 150°C

Identified Substitutes:

FQB12P20TM (onsemi, QFET® series) - Voltage-rated substitute with enhanced specifications
IXTA15P15T (IXYS, TrenchP™ series) - Direct voltage and current rating match with improved performance

Both substitutes maintain P-Channel MOSFET topology in D2PAK packaging and meet or exceed the electrical requirements of the IRF6215S.

Parameter Comparison

Parameter	IRF6215S (Infineon)	FQB12P20TM (onsemi)	IXTA15P15T (IXYS)	Unit
Drain to Source Voltage (Vdss)	150	200	150	V
Continuous Drain Current (Id) @ 25°C	13	11.5	15	A
On-State Resistance (Rds On) @ 10V	290 @ 6.6A	470 @ 5.75A	240 @ 7A	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	5	4.5	V
Gate Charge (Qg) @ 10V	66	40	48	nC
Power Dissipation (Tc)	110	120	150	W
Operating Temperature Range	-55 to 175	-55 to 150	-55 to 150	°C
Package Type	D2PAK (TO-263-3)	TO-263 (D2PAK)	TO-263AA
FET Type	P-Channel	P-Channel	P-Channel
Product Status	Obsolete	Active	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FQB12P20TM (onsemi) is suitable for applications where higher voltage margin is required. This substitute provides 200V Vdss rating compared to the 150V of the IRF6215S, offering additional design headroom. However, the continuous drain current is rated at 11.5A, which is below the IRF6215S specification of 13A. The on-state resistance is higher at 470 mOhm. This part is ROHS3 compliant and carries active product status, ensuring long-term availability. Gate charge is lower at 40 nC, reducing switching losses.

IXTA15P15T (IXYS) provides the closest electrical match to the IRF6215S. It maintains the 150V Vdss rating while exceeding the drain current specification at 15A. The on-state resistance is superior at 240 mOhm, resulting in lower conduction losses. Power dissipation capability is rated at 150W (Tc), exceeding the IRF6215S at 110W. This part is ROHS3 compliant with active product status. The operating temperature range extends to 150°C maximum junction temperature, which is 25°C lower than the IRF6215S.

Both substitutes are available in D2PAK surface mount packaging compatible with IRF6215S PCB layouts. Selection between these substitutes depends on specific application requirements regarding voltage margin, current capacity, and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can FQB12P20TM directly replace IRF6215S in all applications?

A: FQB12P20TM is electrically compatible for applications operating at or below 150V. The higher 200V rating provides additional voltage margin. However, the lower continuous drain current rating of 11.5A versus 13A must be verified against circuit requirements. The higher on-state resistance of 470 mOhm will result in increased conduction losses compared to the IRF6215S at 290 mOhm.

Q: Is IXTA15P15T a pin-compatible replacement?

A: Yes, IXTA15P15T uses the D2PAK (TO-263-3) package identical to IRF6215S, providing pin-for-pin compatibility. PCB layout modifications are not required for package substitution.

Q: What is the impact of different on-state resistance values?

A: On-state resistance directly affects conduction losses and heat generation. IXTA15P15T at 240 mOhm produces lower losses than IRF6215S at 290 mOhm. FQB12P20TM at 470 mOhm produces higher losses. In high-current applications, this difference significantly impacts thermal management requirements.

Q: Are both substitutes RoHS compliant?

A: Yes, both FQB12P20TM and IXTA15P15T are ROHS3 compliant. The original IRF6215S is RoHS non-compliant. For applications requiring RoHS compliance, either substitute is acceptable.

Q: What is the significance of gate charge differences?

A: Gate charge affects switching speed and driver power requirements. FQB12P20TM has the lowest gate charge at 40 nC, followed by IXTA15P15T at 48 nC, and IRF6215S at 66 nC. Lower gate charge enables faster switching and reduces driver circuit stress.

Q: Can I use these substitutes in designs rated for -55°C to 175°C operation?

A: Both substitutes have maximum operating temperature of 150°C, which is 25°C lower than IRF6215S. Applications requiring operation above 150°C junction temperature cannot use these substitutes without thermal design modifications.

Q: What is the difference between D2PAK and TO-263 package designations?

A: D2PAK and TO-263 are equivalent package designations for the same physical form factor. Both FQB12P20TM and IXTA15P15T use TO-263 (D2PAK) packaging, maintaining compatibility with IRF6215S footprints.

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