IRF620S MOSFET N-Channel 200V 5.2A Equivalent & Substitute Parts

Part Overview

The IRF620S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 5.2A continuous drain current. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for general-purpose switching applications requiring moderate current handling at high voltage levels.

The IRF620S is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	200	V
Current - Continuous Drain (Id) @ 25°C	5.2	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	800	mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	260	pF @ 25V
Power Dissipation (Max)	3 (Ta), 50 (Tc)	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRF620S is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V minimum
Current - Continuous Drain (Id): Equal to or greater than 5.2A
Mounting Type: Surface Mount
Package / Case: TO-263-3 or D2PAK compatible

Secondary Compatibility Parameters:

Drive Voltage (Max Rds On): 10V
Operating Temperature Range: -55°C to 150°C minimum
Gate Charge (Qg): Electrical performance indicator
Input Capacitance (Ciss): Switching characteristic indicator

Substitute parts must maintain electrical performance within the specified operating conditions and be compatible with existing PCB layouts designed for TO-263 (D2PAK) packages.

Parameter Comparison

Parameter	IRF620S (Main)	IRF620SPBF (Substitute)	RCJ081N20TL (Substitute)
Manufacturer	Vishay Siliconix	Vishay Siliconix	Rohm Semiconductor
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V	200V	200V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)	5.2A (Tc)	8A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	800mOhm @ 3.1A, 10V	800mOhm @ 3.1A, 10V	770mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V	14nC @ 10V	8.5nC @ 10V
Vgs (Max)	±20V	±20V	±30V
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 25V	260pF @ 25V	330pF @ 25V
Power Dissipation (Max)	3W (Ta), 50W (Tc)	3W (Ta), 50W (Tc)	1.56W (Ta), 40W (Tc)
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Product Status	Obsolete	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF620SPBF (Direct Manufacturer Equivalent)

The IRF620SPBF is the direct equivalent of the IRF620S, manufactured by Vishay Siliconix. This part maintains identical electrical specifications across all critical parameters: 200V Vdss, 5.2A continuous drain current, 800mOhm Rds On, and identical gate charge characteristics. The IRF620SPBF is classified as Active product status, ensuring ongoing availability and supply chain support. The part is ROHS3 compliant, addressing environmental and regulatory requirements that the obsolete IRF620S does not meet. Packaging is supplied in Tube format. This substitute provides direct functional replacement with no design modifications required.

RCJ081N20TL (Alternative Manufacturer Substitute)

The RCJ081N20TL, manufactured by Rohm Semiconductor, provides functional substitution with enhanced electrical performance characteristics. This part maintains the 200V Vdss rating and 10V drive voltage specification. The RCJ081N20TL delivers 8A continuous drain current, exceeding the IRF620S requirement of 5.2A. The Rds On specification of 770mOhm at 4A, 10V is lower than the IRF620S at 800mOhm, indicating improved conduction efficiency. Gate charge is reduced to 8.5nC, supporting faster switching operation. The RCJ081N20TL is classified as Active product status and is ROHS3 compliant. The part is supplied in Cut Tape (CT) and Digi-Reel format. This substitute is suitable for applications where improved current handling and reduced switching losses provide design benefits.

Both substitute parts are compatible with existing TO-263 (D2PAK) PCB layouts and maintain surface mount assembly compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IRF620SPBF be used as a direct replacement for the IRF620S?

A: Yes. The IRF620SPBF is electrically identical to the IRF620S across all specified parameters. Both parts share the same 200V Vdss rating, 5.2A continuous drain current, 800mOhm Rds On, and identical gate charge characteristics. The IRF620SPBF is packaged in TO-263 (D2PAK) format, compatible with existing PCB designs. The primary difference is product status: IRF620SPBF is Active, while IRF620S is Obsolete. No circuit modifications are required for substitution.

Q: What are the key differences between the IRF620S and RCJ081N20TL?

A: Both parts share the same 200V Vdss rating and 10V drive voltage specification. The RCJ081N20TL provides higher continuous drain current (8A versus 5.2A), lower Rds On (770mOhm versus 800mOhm), and lower gate charge (8.5nC versus 14nC). The RCJ081N20TL is manufactured by Rohm Semiconductor rather than Vishay Siliconix. Both parts are housed in TO-263 (D2PAK) packages and are ROHS3 compliant. The RCJ081N20TL is suitable for applications requiring improved current handling and reduced switching losses.

Q: Are both substitute parts compatible with the existing PCB layout?

A: Yes. Both the IRF620SPBF and RCJ081N20TL are packaged in TO-263-3 (D2PAK) format with 2 leads plus tab configuration. This packaging is mechanically and electrically compatible with PCB designs created for the IRF620S. No PCB modifications are required for either substitute part.

Q: What is the significance of the RoHS compliance difference?

A: The IRF620S is RoHS non-compliant, while both substitute parts (IRF620SPBF and RCJ081N20TL) are ROHS3 compliant. ROHS3 compliance indicates conformance to the Restriction of Hazardous Substances Directive, restricting the use of specific hazardous materials in electrical and electronic equipment. For new designs or applications subject to environmental regulations, ROHS3-compliant substitutes are required.

Q: Which substitute part should be selected for maximum current capacity?

A: The RCJ081N20TL provides the highest continuous drain current rating at 8A, compared to 5.2A for both the IRF620S and IRF620SPBF. Selection of the RCJ081N20TL is appropriate for applications requiring current capacity exceeding 5.2A or where design margin for current handling is a priority.

Q: Are there any operating temperature limitations with the substitute parts?

A: The IRF620S and IRF620SPBF both specify an operating temperature range of -55°C to 150°C (TJ). The RCJ081N20TL specifies a maximum junction temperature of 150°C. For applications requiring operation below -55°C, the RCJ081N20TL does not provide a specified lower temperature limit in the provided data. Verify application temperature requirements against the specified operating ranges.

Q: What packaging formats are available for each substitute part?

A: The IRF620SPBF is supplied in Tube packaging. The RCJ081N20TL is supplied in Cut Tape (CT) and Digi-Reel format. Both formats are standard for surface mount component distribution. Selection between packaging formats depends on assembly process requirements and order quantity considerations.

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