IRF614 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF614 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 250V drain-to-source voltage with a continuous drain current of 2.7A at 25°C. The device is packaged in a TO-220AB through-hole configuration and is rated for 36W maximum power dissipation. The IRF614 is classified as obsolete, making identification of active equivalent parts necessary for ongoing design support and procurement. Substitute parts must maintain identical electrical performance and mechanical compatibility to ensure direct replacement capability in existing circuit designs.

Substiute Parts

IRF614
Vishay SiliconixIn Stock: 36195IRF614 Datasheet
IRF614
Current Part
IRF614PBF
Vishay SiliconixIn Stock: 4560IRF614PBF Datasheet
IRF614PBF
Direct

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 250 V
Continuous Drain Current (Id) @ 25°C 2.7 A (Tc)
Rds On (Max) @ Id, Vgs 2 Ohm @ 1.6A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Power Dissipation (Max) 36 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3 Through Hole

Substitute Part Grouping Explanation

Substitution of the IRF614 is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id) @ 25°C: 2.7A (Tc)
  • On-State Drain Resistance (Rds On): 2 Ohm @ 1.6A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Power Dissipation (Max): 36W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Equivalence Criteria:

  • Package Type: TO-220-3
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB

Substitute parts must match all specified electrical parameters and maintain identical mechanical packaging to ensure direct pin-for-pin and functional replacement without circuit modification.

Parameter Comparison

Parameter IRF614 IRF614PBF Unit
Manufacturer Vishay Siliconix Vishay Siliconix
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 250 V
Continuous Drain Current (Id) @ 25°C 2.7 2.7 A (Tc)
Rds On (Max) @ Id, Vgs 2 @ 1.6A, 10V 2 @ 1.6A, 10V Ohm
Gate Threshold Voltage (Vgs(th)) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 8.2 @ 10V 8.2 @ 10V nC
Maximum Gate Voltage (Vgs) ±20 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 140 @ 25V 140 @ 25V pF
Power Dissipation (Max) 36 36 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package Type TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

The IRF614PBF is a direct electrical and mechanical equivalent to the IRF614. Both parts are manufactured by Vishay Siliconix and share identical electrical specifications across all critical parameters including Vdss, Id, Rds On, Vgs(th), and power dissipation ratings.

The primary distinction between the two parts is product status and regulatory compliance. The IRF614 is classified as obsolete, while the IRF614PBF maintains active product status. The IRF614PBF is ROHS3 compliant, whereas the original IRF614 is RoHS non-compliant. This compliance difference makes the IRF614PBF the appropriate selection for new designs and applications requiring adherence to current environmental and regulatory standards.

Both parts are supplied in identical TO-220AB through-hole packaging, ensuring mechanical compatibility and direct pin-for-pin replacement without PCB modification or circuit redesign.

Frequently Asked Questions (FAQ)

Q: Can the IRF614PBF be used as a direct replacement for the IRF614?

A: Yes. The IRF614PBF is electrically and mechanically equivalent to the IRF614. All electrical parameters including voltage rating, current rating, on-state resistance, and thermal characteristics are identical. Both parts use the TO-220AB through-hole package with identical pin configuration.

Q: What is the primary reason to substitute the IRF614 with the IRF614PBF?

A: The IRF614 is classified as obsolete. The IRF614PBF is the active equivalent part from the same manufacturer. Additionally, the IRF614PBF is ROHS3 compliant, meeting current environmental regulations, whereas the original IRF614 is RoHS non-compliant.

Q: Are there any electrical performance differences between the IRF614 and IRF614PBF?

A: No. Both parts have identical electrical specifications. Drain-to-source voltage, continuous drain current, on-state resistance, gate threshold voltage, gate charge, input capacitance, and power dissipation ratings are the same.

Q: What is the difference in packaging between these parts?

A: Both parts use the TO-220-3 package with TO-220AB supplier device packaging. The IRF614 is supplied in standard packaging, while the IRF614PBF is supplied in tube packaging. This difference does not affect electrical performance or mechanical compatibility.

Q: Can the IRF614PBF be used in applications originally designed for the IRF614?

A: Yes. The IRF614PBF is a direct substitute for the IRF614 in all applications. No circuit modifications, PCB changes, or design alterations are required.

Q: What compliance certifications apply to the IRF614PBF?

A: The IRF614PBF is ROHS3 compliant and REACH unaffected. The original IRF614 is RoHS non-compliant and REACH unaffected.

Request Quote (Ships tomorrow)