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IRF614 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRF614 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 250V drain-to-source voltage with a continuous drain current of 2.7A at 25°C. The device is packaged in a TO-220AB through-hole configuration and is rated for 36W maximum power dissipation. The IRF614 is classified as obsolete, making identification of active equivalent parts necessary for ongoing design support and procurement. Substitute parts must maintain identical electrical performance and mechanical compatibility to ensure direct replacement capability in existing circuit designs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 250 | V |
| Continuous Drain Current (Id) @ 25°C | 2.7 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 2 | Ohm @ 1.6A, 10V |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4 | V @ 250µA |
| Power Dissipation (Max) | 36 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | TO-220-3 | Through Hole |
Substitute Part Grouping Explanation
Substitution of the IRF614 is determined by strict equivalence across the following electrical and mechanical parameters:
Electrical Equivalence Criteria:
- Drain to Source Voltage (Vdss): 250V
- Continuous Drain Current (Id) @ 25°C: 2.7A (Tc)
- On-State Drain Resistance (Rds On): 2 Ohm @ 1.6A, 10V
- Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature Range: -55°C to 150°C (TJ)
Mechanical Equivalence Criteria:
- Package Type: TO-220-3
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
Substitute parts must match all specified electrical parameters and maintain identical mechanical packaging to ensure direct pin-for-pin and functional replacement without circuit modification.
Parameter Comparison
| Parameter | IRF614 | IRF614PBF | Unit |
|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 250 | 250 | V |
| Continuous Drain Current (Id) @ 25°C | 2.7 | 2.7 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 2 @ 1.6A, 10V | 2 @ 1.6A, 10V | Ohm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4 @ 250µA | 4 @ 250µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 @ 10V | 8.2 @ 10V | nC |
| Maximum Gate Voltage (Vgs) | ±20 | ±20 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 @ 25V | 140 @ 25V | pF |
| Power Dissipation (Max) | 36 | 36 | W (Tc) |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C (TJ) |
| Package Type | TO-220-3 | TO-220-3 | — |
| Mounting Type | Through Hole | Through Hole | — |
| Supplier Device Package | TO-220AB | TO-220AB | — |
| Product Status | Obsolete | Active | — |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | — |
Engineering Selection Recommendations
The IRF614PBF is a direct electrical and mechanical equivalent to the IRF614. Both parts are manufactured by Vishay Siliconix and share identical electrical specifications across all critical parameters including Vdss, Id, Rds On, Vgs(th), and power dissipation ratings.
The primary distinction between the two parts is product status and regulatory compliance. The IRF614 is classified as obsolete, while the IRF614PBF maintains active product status. The IRF614PBF is ROHS3 compliant, whereas the original IRF614 is RoHS non-compliant. This compliance difference makes the IRF614PBF the appropriate selection for new designs and applications requiring adherence to current environmental and regulatory standards.
Both parts are supplied in identical TO-220AB through-hole packaging, ensuring mechanical compatibility and direct pin-for-pin replacement without PCB modification or circuit redesign.
Frequently Asked Questions (FAQ)
Q: Can the IRF614PBF be used as a direct replacement for the IRF614?
A: Yes. The IRF614PBF is electrically and mechanically equivalent to the IRF614. All electrical parameters including voltage rating, current rating, on-state resistance, and thermal characteristics are identical. Both parts use the TO-220AB through-hole package with identical pin configuration.
Q: What is the primary reason to substitute the IRF614 with the IRF614PBF?
A: The IRF614 is classified as obsolete. The IRF614PBF is the active equivalent part from the same manufacturer. Additionally, the IRF614PBF is ROHS3 compliant, meeting current environmental regulations, whereas the original IRF614 is RoHS non-compliant.
Q: Are there any electrical performance differences between the IRF614 and IRF614PBF?
A: No. Both parts have identical electrical specifications. Drain-to-source voltage, continuous drain current, on-state resistance, gate threshold voltage, gate charge, input capacitance, and power dissipation ratings are the same.
Q: What is the difference in packaging between these parts?
A: Both parts use the TO-220-3 package with TO-220AB supplier device packaging. The IRF614 is supplied in standard packaging, while the IRF614PBF is supplied in tube packaging. This difference does not affect electrical performance or mechanical compatibility.
Q: Can the IRF614PBF be used in applications originally designed for the IRF614?
A: Yes. The IRF614PBF is a direct substitute for the IRF614 in all applications. No circuit modifications, PCB changes, or design alterations are required.
Q: What compliance certifications apply to the IRF614PBF?
A: The IRF614PBF is ROHS3 compliant and REACH unaffected. The original IRF614 is RoHS non-compliant and REACH unaffected.
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