IRF610LPBF Equivalent & Substitute Parts

Part Overview

The IRF610LPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 3.3A continuous drain current. The device is packaged in I2PAK (TO-262-3) through-hole configuration and is currently in active production status. This part is suitable for general-purpose switching applications requiring moderate voltage and current ratings.

Substitute parts are necessary when the IRF610LPBF is unavailable, when alternative voltage or current ratings better match application requirements, or when design optimization calls for different electrical characteristics within compatible parameter ranges.

Substiute Parts

IRF610LPBF

Vishay SiliconixIn Stock: 2213IRF610LPBF Datasheet

Current PartRFQ

IPP039N04LGXKSA1

Infineon TechnologiesIn Stock: 1217IPP039N04LGXKSA1 Datasheet

MFR RecommendedRFQ

IPP041N04NGXKSA1

Infineon TechnologiesIn Stock: 4193IPP041N04NGXKSA1 Datasheet

MFR RecommendedRFQ

IPP042N03LGXKSA1

Infineon TechnologiesIn Stock: 1216IPP042N03LGXKSA1 Datasheet

MFR RecommendedRFQ

IPP12CN10LGXKSA1

Infineon TechnologiesIn Stock: 4497IPP12CN10LGXKSA1 Datasheet

MFR RecommendedRFQ

IPP60R099CPXKSA1

Infineon TechnologiesIn Stock: 2032IPP60R099CPXKSA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF610LPBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel only
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Through Hole
• Gate Voltage (Vgs Max): ±20V
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: 1 (Unlimited)

Electrical Performance Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 200V for direct substitution
• Continuous Drain Current (Id) must equal or exceed 3.3A
• On-Resistance (Rds On) characteristics must support the application's power dissipation requirements
• Gate Charge (Qg) and Input Capacitance (Ciss) affect switching speed and drive circuit requirements
• Operating Temperature Range must encompass -55°C to 150°C minimum

Package Considerations:

• Substitute parts may use different through-hole packages (TO-220-3 vs. I2PAK) if mechanical fit is accommodated in the application
• All substitute parts listed are through-hole mounted devices

The substitute parts listed represent Infineon Technologies N-Channel MOSFETs from the OptiMOS™ and CoolMOS™ series. These parts are grouped by voltage rating and current capability, with each offering distinct trade-offs in on-resistance, gate charge, and power dissipation characteristics.

Parameter Comparison

Engineering Selection Recommendations

For Active Production Designs:

The IRF610LPBF remains the primary choice for new designs requiring 200V, 3.3A N-Channel MOSFET performance in I2PAK packaging. The device is in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating.

When the IRF610LPBF is unavailable, the IPP041N04NGXKSA1 (Infineon OptiMOS™ 40V, 80A) is the recommended substitute for active production designs. This part maintains active product status, ROHS3 compliance, and REACH unaffected designation. However, the 40V Vdss rating is significantly lower than the IRF610LPBF's 200V rating and is suitable only for applications where voltage stress does not exceed 40V.

The IPP12CN10LGXKSA1 (Infineon OptiMOS™ 100V, 69A) is recommended for applications requiring higher voltage capability than the 40V alternatives while remaining below the IRF610LPBF's 200V rating. This part is in active production status with full compliance certifications.

For Legacy or Discontinued Design Support:

The IPP039N04LGXKSA1, IPP042N03LGXKSA1, and IPP60R099CPXKSA1 are designated "Not For New Designs" and should be used only for sustaining production of existing designs or when no active alternatives meet specific application requirements. These parts maintain ROHS3 compliance and REACH unaffected status but are not recommended for new product development.

Package Transition Consideration:

All substitute parts use TO-220-3 through-hole packaging, which differs from the IRF610LPBF's I2PAK (TO-262-3) package. PCB layout and mechanical mounting must be verified for compatibility before substitution.

Frequently Asked Questions (FAQ)

Q: Can the IPP041N04NGXKSA1 directly replace the IRF610LPBF in all applications?

A: No. While both are N-Channel MOSFETs with ±20V gate voltage ratings and through-hole mounting, the IPP041N04NGXKSA1 has a maximum Vdss of 40V compared to the IRF610LPBF's 200V. Direct substitution is only valid for applications where the drain-to-source voltage does not exceed 40V. The package type also differs (TO-220-3 vs. I2PAK), requiring PCB layout verification.

Q: What is the significance of the "Not For New Designs" product status?

A: Parts designated "Not For New Designs" are in mature or declining production phases. While they remain available and fully compliant with RoHS3 and REACH requirements, manufacturers do not recommend their use in new product development. These parts are suitable for sustaining production of existing designs or as temporary solutions when active alternatives are unavailable.

Q: How do gate charge (Qg) differences affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. The IRF610LPBF has a Qg of 8.2 nC, while substitute parts range from 38 nC to 80 nC. Higher gate charge requires more drive current from the gate driver circuit and increases switching losses. Applications with tight timing requirements or limited gate drive capability must account for these differences.

Q: Why do the substitute parts have significantly lower on-resistance (Rds On)?

A: The substitute parts are rated for higher continuous drain currents (31A to 80A) compared to the IRF610LPBF's 3.3A. Lower on-resistance is a characteristic of higher-current-rated MOSFETs and reflects the different application class. Lower Rds On reduces conduction losses but does not make these parts suitable for the IRF610LPBF's lower-current applications without design reconsideration.

Q: Can I use the IPP60R099CPXKSA1 for high-voltage applications?

A: The IPP60R099CPXKSA1 is rated for 650V Vdss, which exceeds the IRF610LPBF's 200V rating. However, this part is designated "Not For New Designs" and should not be selected for new applications. Additionally, the 650V rating introduces higher on-resistance (99 mOhm) and different switching characteristics that may not be optimal for 200V applications. The IPP12CN10LGXKSA1 (100V, active status) is a more appropriate choice for voltage ratings between 40V and 200V.

Q: What are the package implications of substituting TO-220-3 for I2PAK?

A: The IRF610LPBF uses I2PAK (TO-262-3) packaging with long leads, while all substitute parts use standard TO-220-3 packaging. These packages have different pin spacing, lead lengths, and thermal characteristics. PCB footprints, mounting hardware, and thermal management solutions must be re-evaluated before substitution. Mechanical fit verification is mandatory.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IPP039N04LGXKSA1, IPP041N04NGXKSA1, IPP042N03LGXKSA1, IPP12CN10LGXKSA1, and IPP60R099CPXKSA1) are ROHS3 compliant with moisture sensitivity level 1 (unlimited). The IRF610LPBF also maintains ROHS3 compliance, ensuring environmental and regulatory consistency across all options.

Q: Which substitute part is best for applications requiring the closest electrical match to the IRF610LPBF?

A: No substitute part provides a direct electrical match to the IRF610LPBF's 200V, 3.3A combination. The IPP12CN10LGXKSA1 (100V, 69A) offers the closest voltage rating at 100V and is in active production status. For applications requiring 200V capability, the IRF610LPBF remains the only option among the listed parts. Alternative manufacturers' parts outside this list may provide closer matches.