IRF610L N-Channel MOSFET 200V 3.3A Equivalent & Substitute Parts

Part Overview

The IRF610L is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with a continuous drain current of 3.3A at 25°C. The device is housed in a TO-262 package configuration and is designed for through-hole mounting applications requiring moderate power dissipation up to 36W at case temperature.

The IRF610L is classified as obsolete product status. Locating equivalent substitute parts is necessary for ongoing production support, design updates, and inventory replenishment where original stock becomes unavailable or depleted.

Substiute Parts

IRF610L
Vishay SiliconixIn Stock: 946IRF610L Datasheet
IRF610L
Current Part
IRF610LPBF
Vishay SiliconixIn Stock: 2213IRF610LPBF Datasheet
IRF610LPBF
Direct

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 3.3 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25V
Power Dissipation (Max) 3W (Ta), 36W (Tc) W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRF610L is determined by strict electrical and mechanical parameter matching. The following criteria establish compatibility:

Electrical Parameters (Must Match):

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 200V minimum
  • Continuous Drain Current (Id) @ 25°C: 3.3A minimum
  • Drive Voltage (Max Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm or lower @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA or lower
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10V or lower
  • Vgs (Max): ±20V minimum
  • Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25V or lower
  • Power Dissipation (Max): 3W (Ta), 36W (Tc) minimum
  • Operating Temperature Range: -55°C to 150°C (TJ) minimum

Mechanical Parameters (Must Match):

  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, or TO-262AA compatible

The IRF610LPBF is identified as a direct substitute based on identical electrical specifications and compatible package configuration. The IRF610LPBF differs only in product status (Active versus Obsolete) and RoHS compliance level, with no degradation of electrical or thermal performance.

Parameter Comparison

Parameter IRF610L IRF610LPBF Unit
Manufacturer Vishay Siliconix Vishay Siliconix
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 200 200 V
Continuous Drain Current (Id) @ 25°C 3.3 3.3 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 1.5 @ 2A, 10V 1.5 @ 2A, 10V Ohm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 8.2 @ 10V 8.2 @ 10V nC
Vgs (Max) ±20 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 140 @ 25V 140 @ 25V pF
Power Dissipation (Max) 3W (Ta), 36W (Tc) 3W (Ta), 36W (Tc) W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The IRF610LPBF is the direct equivalent substitute for the IRF610L. Both devices share identical electrical specifications, thermal performance, and mechanical package compatibility. The IRF610LPBF is preferred for new designs and production continuity due to its Active product status and ROHS3 compliance certification.

The IRF610L is classified as Obsolete, which restricts long-term availability and supply chain reliability. The IRF610LPBF maintains full electrical and thermal equivalence while providing access to current manufacturing processes and compliance certifications required for modern applications.

For applications requiring RoHS compliance or long-term component availability, the IRF610LPBF is the appropriate selection. For legacy systems currently using IRF610L inventory, direct substitution with IRF610LPBF is electrically and mechanically valid without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can the IRF610LPBF be used as a direct replacement for the IRF610L in existing circuits?

A: Yes. The IRF610LPBF is electrically and mechanically identical to the IRF610L. All electrical parameters, thermal ratings, and package dimensions are equivalent. Direct substitution requires no circuit modifications or design changes.

Q: What is the difference between IRF610L and IRF610LPBF?

A: The primary differences are product status and RoHS compliance. The IRF610L is Obsolete and RoHS non-compliant. The IRF610LPBF is Active product status and ROHS3 compliant. Electrical specifications and thermal performance are identical.

Q: Are the package configurations of IRF610L and IRF610LPBF compatible?

A: Yes. Both devices use TO-262-3 Long Leads, I2PAK, or TO-262AA package configurations. Pin assignments, lead spacing, and mounting hole patterns are identical. PCB layouts designed for IRF610L accept IRF610LPBF without modification.

Q: What is the moisture sensitivity level for these devices?

A: Both IRF610L and IRF610LPBF have Moisture Sensitivity Level (MSL) rating of 1 (Unlimited). This indicates unlimited shelf life under normal storage conditions without special moisture control requirements.

Q: Why is the IRF610L classified as Obsolete?

A: The IRF610L is no longer in active production by Vishay Siliconix. The IRF610LPBF represents the current active equivalent. Existing IRF610L inventory is limited and subject to availability constraints.

Q: What is ROHS3 compliance?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting the use of specific hazardous materials in electrical and electronic equipment. The IRF610LPBF meets these regulatory requirements; the IRF610L does not.

Q: Can I use IRF610LPBF in applications originally designed for IRF610L?

A: Yes. The IRF610LPBF is a direct functional equivalent with no electrical or thermal performance differences. Applications designed for IRF610L operate identically with IRF610LPBF without circuit redesign or component requalification.

Q: What is the gate charge specification and why is it important?

A: Gate charge (Qg) is 8.2 nC @ 10V for both devices. This parameter determines the switching speed and gate drive requirements. Identical gate charge ensures compatible gate driver circuits and switching performance.

Q: Are there any thermal management differences between these devices?

A: No. Both devices have identical power dissipation ratings of 3W (Ta) and 36W (Tc). Thermal management strategies, heatsink requirements, and operating temperature ranges are equivalent.

Request Quote (Ships tomorrow)