IRF5850TR Equivalent & Substitute Parts

Part Overview

The IRF5850TR is a dual P-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications in logic-level gate switching circuits. This component features a 20V drain-to-source voltage rating with 2.2A continuous drain current capability and is housed in a 6-TSOP package.

The IRF5850TR is classified as an obsolete product. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	2.2	A
Rds On (Max) @ 2.2A, 4.5V	135	mOhm
Vgs(th) (Max) @ 250µA	1.2	V
Gate Charge (Qg) (Max) @ 4.5V	5.4	nC
Input Capacitance (Ciss) (Max) @ 15V	320	pF
Power - Max	960	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 P-Channel (Dual)
Package / Case	SOT-23-6 Thin, TSOT-23-6
FET Feature	Logic Level Gate

Substitute Part Grouping Explanation

Substitute parts for the IRF5850TR are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 20V
Configuration: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Package / Case: SOT-23-6 Thin, TSOT-23-6
Operating Temperature Range: -55°C to 150°C (TJ)

Performance Parameters (within acceptable tolerance):

Current - Continuous Drain (Id) @ 25°C: ≥ 2.2A
Rds On (Max): ≤ 135mOhm @ rated current and gate voltage
Vgs(th) (Max): ≤ 1.5V @ 250µA
Gate Charge (Qg) (Max): ≤ 5.4nC @ 4.5V

The substitute parts FDC6310P and FDC6312P satisfy all critical matching parameters and maintain electrical performance within acceptable ranges for direct substitution in applications designed for the IRF5850TR.

Parameter Comparison

Parameter	IRF5850TR	FDC6310P	FDC6312P	Unit
Manufacturer	Infineon Technologies	onsemi	onsemi
Product Status	Obsolete	Active	Active
Drain to Source Voltage (Vdss)	20	20	20	V
Current - Continuous Drain (Id) @ 25°C	2.2	2.2	2.3	A
Rds On (Max) @ Id, 4.5V	135	125	115	mOhm
Vgs(th) (Max) @ 250µA	1.2	1.5	1.5	V
Gate Charge (Qg) (Max) @ 4.5V	5.4	5.2	7	nC
Input Capacitance (Ciss) (Max)	320 @ 15V	337 @ 10V	467 @ 10V	pF
Power - Max	960	700	700	mW
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Configuration	2 P-Channel (Dual)	2 P-Channel (Dual)	2 P-Channel (Dual)
Package / Case	SOT-23-6 Thin, TSOT-23-6	SOT-23-6 Thin, TSOT-23-6	SOT-23-6 Thin, TSOT-23-6
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

FDC6310P is the primary substitute for IRF5850TR applications. This part is manufactured by onsemi under the PowerTrench® series and maintains active product status. The FDC6310P provides equivalent electrical performance with improved on-resistance (125mOhm vs. 135mOhm) and reduced power dissipation (700mW vs. 960mW). The component achieves ROHS3 compliance, addressing regulatory requirements that the obsolete IRF5850TR does not meet. Package compatibility is confirmed across SOT-23-6 Thin and TSOT-23-6 specifications.

FDC6312P serves as an alternative substitute with enhanced current capability (2.3A vs. 2.2A) and superior on-resistance performance (115mOhm). This part is also ROHS3 compliant and maintains active product status. The FDC6312P is suitable for applications requiring higher current margins or improved thermal performance. Gate charge is slightly elevated (7nC vs. 5.4nC), and input capacitance is higher (467pF vs. 320pF), which may affect switching speed in timing-critical circuits.

Both substitute parts maintain identical voltage ratings, temperature operating range, and package form factor. Selection between FDC6310P and FDC6312P depends on specific application requirements for current capacity and switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can FDC6310P and FDC6312P be used interchangeably with IRF5850TR?

A: Both parts are electrically compatible substitutes for IRF5850TR in applications designed for 20V, dual P-channel logic-level gate MOSFETs in SOT-23-6 packages. Interchangeability is confirmed based on matching voltage ratings, configuration, package type, and operating temperature range. Verify application-specific requirements for current capacity and switching characteristics before final selection.

Q: What are the key differences between FDC6310P and FDC6312P?

A: FDC6310P is rated for 2.2A continuous drain current with 125mOhm on-resistance. FDC6312P is rated for 2.3A continuous drain current with 115mOhm on-resistance. FDC6312P offers improved current capacity and lower on-resistance but exhibits higher gate charge (7nC vs. 5.2nC) and input capacitance (467pF vs. 337pF). Select FDC6310P for direct performance matching; select FDC6312P for applications requiring higher current margins or lower conduction losses.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both FDC6310P and FDC6312P are ROHS3 compliant. The original IRF5850TR is RoHS non-compliant. Substitution with either part addresses RoHS compliance requirements for new designs or production transitions.

Q: Is the SOT-23-6 package identical across all three parts?

A: All three parts use SOT-23-6 Thin and TSOT-23-6 package specifications. Physical footprint and pin configuration are compatible. Verify PCB layout and thermal management design to ensure adequate performance with the substitute part's power dissipation characteristics.

Q: What is the impact of higher gate charge in FDC6312P?

A: FDC6312P exhibits 7nC gate charge compared to 5.4nC in IRF5850TR. Higher gate charge increases switching time and driver power consumption. In applications with fast switching requirements or power-constrained gate drivers, FDC6310P may be the preferred choice due to lower gate charge (5.2nC).

Q: Can these parts be used in new designs, or only as replacements?

A: FDC6310P and FDC6312P are active products suitable for both new designs and replacement applications. Both parts offer improved performance and regulatory compliance compared to the obsolete IRF5850TR.

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