IRF5806 Equivalent & Substitute Parts

Part Overview

The IRF5806 is a P-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the Micro6™ (TSOP-6) package. This device operates at 20V drain-to-source voltage with a continuous drain current rating of 4A at 25°C and maximum power dissipation of 2W. The IRF5806 is classified as obsolete, necessitating identification of functionally equivalent substitute components for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	4	A
On-State Resistance (Rds On) @ 4A, 4.5V	86	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1.2	V
Power Dissipation (Max)	2	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-6 Thin (TSOP-6)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRF5806 is determined by strict equivalence across the following critical parameters:

Electrical Compatibility Requirements:

FET Type: P-Channel topology must be maintained
Drain to Source Voltage (Vdss): Minimum 20V rating required
Gate Threshold Voltage (Vgs(th)): Maximum 1.5V @ 250µA to ensure gate drive compatibility
Maximum Gate Voltage (Vgs): Must accommodate ±8V minimum
Operating Temperature Range: Must span -55°C to 150°C

Mechanical & Package Compatibility:

Mounting Type: Surface Mount only
Package: SOT-23-6 Thin (TSOP-6) footprint compatibility

Performance Parameters:

Continuous Drain Current (Id): Minimum 3.5A at 25°C
On-State Resistance (Rds On): Maximum 80mOhm @ rated current and gate voltage
Power Dissipation: Minimum 1.6W rating

The FDC634P from onsemi meets all substitution criteria and is classified as an active product with current manufacturing support.

Parameter Comparison

Parameter	IRF5806 (Infineon)	FDC634P (onsemi)	Unit
FET Type	P-Channel	P-Channel	—
Drain to Source Voltage (Vdss)	20	20	V
Continuous Drain Current (Id) @ 25°C	4	3.5	A
Rds On (Max) @ Rated Current, 4.5V	86	80	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1.2	1.5	V
Gate Charge (Qg) @ 4.5V	11.4	10	nC
Power Dissipation (Max)	2	1.6	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	SOT-23-6 Thin (TSOP-6)	SOT-23-6 Thin (TSOP-6)	—
Product Status	Obsolete	Active	—
RoHS Compliance	Non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

The FDC634P is the qualified substitute for the obsolete IRF5806 based on the following engineering criteria:

Electrical Equivalence: Both devices share identical Vdss (20V) and operating temperature range (-55°C to 150°C). The FDC634P delivers 3.5A continuous drain current, which is 87.5% of the IRF5806's 4A rating. On-state resistance is superior in the FDC634P (80mOhm vs. 86mOhm), providing improved efficiency. Gate threshold voltage remains within acceptable tolerance (1.5V vs. 1.2V), ensuring compatible gate drive circuits.

Package Compatibility: Both devices utilize the SOT-23-6 Thin (TSOP-6) surface mount package, enabling direct PCB footprint compatibility without layout modifications.

Product Status & Compliance: The FDC634P is an active product with current manufacturing availability and ROHS3 compliance, addressing supply chain continuity and regulatory requirements. The IRF5806's obsolete status and RoHS non-compliance status necessitate transition to the FDC634P for new designs and ongoing production support.

Thermal Performance: The FDC634P's 1.6W power dissipation rating is lower than the IRF5806's 2W rating. Thermal analysis is required for applications operating at maximum power levels to confirm adequate margin.

Frequently Asked Questions (FAQ)

Q: Can the FDC634P directly replace the IRF5806 without circuit modifications?

A: Yes, for applications where the continuous drain current requirement does not exceed 3.5A. The FDC634P is electrically and mechanically compatible with identical Vdss, gate threshold voltage within tolerance, and matching SOT-23-6 package footprint. No PCB layout changes are required.

Q: What is the impact of the 0.5A reduction in continuous drain current (4A to 3.5A)?

A: The FDC634P supports 87.5% of the IRF5806's rated current. Applications operating below 3.5A continuous drain current experience no functional impact. Applications requiring the full 4A rating must be re-evaluated for thermal and electrical performance using the FDC634P's specifications.

Q: Are there differences in gate drive requirements between these devices?

A: Gate threshold voltage differs slightly (IRF5806: 1.2V; FDC634P: 1.5V). Both values fall within standard gate drive voltage ranges (±8V to ±20V). Existing gate drive circuits designed for the IRF5806 are compatible with the FDC634P. Gate charge is slightly lower in the FDC634P (10nC vs. 11.4nC), resulting in faster switching response.

Q: What are the compliance differences between these parts?

A: The IRF5806 is RoHS non-compliant and obsolete. The FDC634P is ROHS3 compliant and actively manufactured. For new designs and regulated applications, the FDC634P is the required choice.

Q: Is thermal management different between these devices?

A: The FDC634P has a lower maximum power dissipation rating (1.6W vs. 2W). Thermal design margins must be verified for applications operating near maximum power levels. The improved on-state resistance (80mOhm vs. 86mOhm) in the FDC634P reduces resistive losses, partially offsetting the lower power rating.

Q: Are there package or pinout differences?

A: Both devices use the SOT-23-6 Thin (TSOP-6) package with identical pinout and footprint. No PCB modifications are required for mechanical compatibility.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message