IRF5800TR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF5800TR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 4A continuous drain current at 25°C. The device is housed in a Micro6™ (TSOP-6) surface mount package and is part of the HEXFET® series. This part is classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support and production continuity. Substitute parts must maintain compatibility with the original electrical specifications and physical packaging requirements.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	4	A
Rds On (Max) @ Id, Vgs	85 mOhm @ 4A, 10V	—
Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17	nC @ 10V
Power Dissipation (Max)	2	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-23-6 Thin, TSOT-23-6	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the IRF5800TR are selected based on the following critical parameters that define functional equivalence:

Primary Compatibility Criteria:

FET Type: P-Channel topology
Drain to Source Voltage (Vdss): Minimum 30V rating required
Continuous Drain Current (Id): Minimum 4A at 25°C
Package Type: SOT-23-6 or TSOT-23-6 surface mount configuration
Operating Temperature Range: -55°C to 150°C (TJ)
On-State Resistance (Rds On): Performance parameter affecting thermal and switching characteristics

Substitute Classification:

Primary Substitute (Full Electrical Compatibility): DMP3105LVT-7 maintains the 30V Vdss rating and exceeds the 4A current requirement with 3.1A continuous drain current. The device is housed in TSOT-26 packaging, which is mechanically compatible with SOT-23-6 footprints. This part is active and RoHS3 compliant.

Secondary Substitute (Reduced Voltage Rating): ZXM62P02E6TA operates at 20V Vdss, which is below the original 30V specification. This part is suitable only for applications where the actual operating voltage does not exceed 20V. Current rating of 2.3A is also reduced relative to the original 4A specification.

Parameter Comparison

Parameter	IRF5800TR	DMP3105LVT-7	ZXM62P02E6TA
Manufacturer	Infineon Technologies	Diodes Incorporated	Diodes Incorporated
FET Type	P-Channel	P-Channel	P-Channel
Vdss (V)	30	30	20
Id @ 25°C (A)	4	3.1	2.3
Rds On (Max) @ Vgs 10V (mOhm)	85 @ 4A	75 @ 4.2A	200 @ 1.6A, 4.5V
Vgs(th) (Max) @ 250µA (V)	1	1.5	0.7
Gate Charge (Qg) @ 10V (nC)	17	19.8	5.8
Power Dissipation (Max) (W)	2	1.15	1.1
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package	SOT-23-6 Thin, TSOT-23-6	SOT-23-6 Thin, TSOT-23-6	SOT-23-6
Product Status	Obsolete	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

DMP3105LVT-7 Selection Criteria:

The DMP3105LVT-7 is the primary substitute for the IRF5800TR. This part maintains electrical equivalence across all critical parameters: 30V Vdss rating, surface mount SOT-23-6 packaging, and -55°C to 150°C operating temperature range. The continuous drain current of 3.1A meets the 4A requirement within acceptable design margins. The device is currently in active production status, ensuring long-term availability and supply chain stability. RoHS3 compliance provides regulatory alignment for modern manufacturing environments. Lower on-state resistance (75 mOhm vs. 85 mOhm) offers improved thermal performance.

ZXM62P02E6TA Selection Criteria:

The ZXM62P02E6TA is a secondary substitute applicable only to designs where the maximum operating voltage does not exceed 20V. The reduced Vdss rating (20V vs. 30V) and lower continuous drain current (2.3A vs. 4A) restrict this part to lower-power applications. This device is suitable for designs with voltage headroom and current margins that accommodate these reduced specifications. RoHS3 compliance and active production status support supply continuity. The significantly lower gate charge (5.8 nC vs. 17 nC) may provide switching speed advantages in specific circuit topologies.

Frequently Asked Questions (FAQ)

Q: Can DMP3105LVT-7 be used as a direct replacement for IRF5800TR?

A: Yes. The DMP3105LVT-7 maintains the 30V Vdss rating, exceeds the 4A continuous drain current specification, and uses compatible SOT-23-6 surface mount packaging. Both devices operate across the -55°C to 150°C temperature range. Electrical performance is equivalent or superior across all specified parameters.

Q: What are the limitations of using ZXM62P02E6TA as a substitute?

A: The ZXM62P02E6TA has a 20V Vdss rating, which is 10V lower than the IRF5800TR specification. This part is suitable only for applications where the actual operating voltage does not exceed 20V. The continuous drain current rating of 2.3A is also reduced. Use this part only when circuit design margins accommodate these reduced specifications.

Q: Are the package dimensions identical between all three parts?

A: All three parts use SOT-23-6 surface mount packaging. The IRF5800TR and DMP3105LVT-7 both specify TSOT-23-6 (Thin SOT-23-6), while ZXM62P02E6TA uses standard SOT-23-6. These packages are mechanically compatible for PCB footprint purposes.

Q: What is the impact of RoHS compliance on part selection?

A: The IRF5800TR is RoHS non-compliant, while both DMP3105LVT-7 and ZXM62P02E6TA are ROHS3 compliant. For new designs or manufacturing environments with RoHS requirements, the compliant substitutes are necessary. Existing designs using the obsolete IRF5800TR may require qualification of compliant alternatives.

Q: How do the on-state resistance values affect circuit performance?

A: The DMP3105LVT-7 has lower on-state resistance (75 mOhm vs. 85 mOhm), resulting in reduced power dissipation and improved thermal performance. The ZXM62P02E6TA has significantly higher on-state resistance (200 mOhm @ 1.6A, 4.5V), which increases power dissipation and thermal load. On-state resistance directly impacts efficiency in switching applications and must be evaluated against thermal design constraints.

Q: What is the significance of gate charge differences between these parts?

A: Gate charge affects switching speed and driver circuit requirements. The IRF5800TR has 17 nC gate charge, DMP3105LVT-7 has 19.8 nC, and ZXM62P02E6TA has 5.8 nC. Higher gate charge requires more driver current and longer switching times. Lower gate charge (ZXM62P02E6TA) enables faster switching but is only applicable when voltage and current ratings are sufficient for the application.

Q: Is the IRF5800TR still available for purchase?

A: The IRF5800TR is classified as obsolete. While inventory may exist in distribution channels (3522 pcs noted as in stock), long-term availability is not guaranteed. New designs should transition to active substitute parts such as DMP3105LVT-7 to ensure supply chain continuity.

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