IRF540ZSTRR Equivalent & Substitute N-Channel MOSFETs Reference

Part Overview

The IRF540ZSTRR, manufactured by Infineon Technologies, is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 100V, a continuous Drain Current (Id) of 36A at 25°C, and maximum Rds(on) of 26.5mOhm. It features a surface-mount D2PAK (TO-263-3) package and 92W (Tc) power dissipation capability. This MOSFET is notable for its HEXFET® technology and is supplied on Tape & Reel. The part status is Obsolete. Finding alternative or substitute models is required for ongoing design maintenance, inventory management, or for supporting legacy applications where the original Infineon IRF540ZSTRR is no longer available.

Key Parameters

Manufacturer Part Number	Manufacturer	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Threshold Voltage Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Package / Case	RoHS Status	Moisture Sensitivity Level (MSL)	Status
IRF540ZSTRR	Infineon Technologies	100 V	36A (Tc)	26.5mOhm @ 22A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1770 pF @ 25 V	92W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	RoHS non-compliant	1 (Unlimited)	Obsolete

Substitute Part Grouping Explanation

Substitute N-channel MOSFETs are selected based on equivalent or better ratings for the parameters that directly determine functional interchangeability. The key substitution criteria are:

Drain to Source Voltage (Vdss)
Continuous Drain Current (Id)
Rds(on) Maximum at defined Id, Vgs
Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg)
Maximum Vgs
Input Capacitance (Ciss)
Power Dissipation (Ptot)
Operating Temperature Range
Package type and mounting method
RoHS and MSL compliance levels

A substitute must match or exceed these parameters, and have the same D2PAK/TO-263-3 surface-mount package to ensure electrical and mechanical compatibility.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Package / Case	RoHS Status	Moisture Sensitivity Level (MSL)	Status
IRF540ZSTRR	Infineon Technologies	100 V	36A (Tc)	26.5mOhm @ 22A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1770 pF @ 25 V	92W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	RoHS non-compliant	1 (Unlimited)	Obsolete
BUK7626-100B,118	Nexperia USA Inc.	100 V	49A (Tc)	26mOhm @ 25A, 10V	4V @ 1mA	38 nC @ 10 V	±20V	2891 pF @ 25 V	157W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Obsolete
BUK9629-100B,118	Nexperia USA Inc.	100 V	46A (Tc)	27mOhm @ 25A, 10V	2V @ 1mA	33 nC @ 5 V	±15V	4360 pF @ 25 V	157W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Active
HUF76639S3ST	onsemi	100 V	51A (Tc)	26mOhm @ 51A, 10V	3V @ 250µA	86 nC @ 10 V	±16V	2400 pF @ 25 V	180W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Active
IRF540SPBF	Vishay Siliconix	100 V	28A (Tc)	77mOhm @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1700 pF @ 25 V	150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Active
IRF540STRLPBF	Vishay Siliconix	100 V	28A (Tc)	77mOhm @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1700 pF @ 25 V	150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Active
PSMN034-100BS,118	Nexperia USA Inc.	100 V	32A (Tc)	34.5mOhm @ 15A, 10V	4V @ 1mA	23.8 nC @ 10 V	±20V	1201 pF @ 50 V	86W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Active
PSMN016-100BS,118	Nexperia USA Inc.	100 V	57A (Tj)	16mOhm @ 15A, 10V	4V @ 1mA	49 nC @ 10 V	±20V	2404 pF @ 50 V	148W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Active
STB30NF10T4	STMicroelectronics	100 V	35A (Tc)	45mOhm @ 15A, 10V	4V @ 250µA	55 nC @ 10 V	±20V	1180 pF @ 25 V	115W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Active
STB40NF10LT4	STMicroelectronics	100 V	40A (Tc)	33mOhm @ 20A, 10V	2.5V @ 250µA	64 nC @ 4.5 V	±15V	2300 pF @ 25 V	150W (Tc)	-65°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK	ROHS3 Compliant	1 (Unlimited)	Active

Engineering Selection Recommendations

When selecting a substitute for the IRF540ZSTRR, consider status (active vs obsolete) and compliance. RoHS3 compliant parts may be prioritized if environmental compliance is required. All listed substitute MOSFETs are available in the TO-263-3, D2PAK package with the same mounting method. For legacy system support, functionally and mechanically equivalent active or obsolete alternatives are listed.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters to check when substituting an N-Channel MOSFET like IRF540ZSTRR?
A1: Substitute selection must be based on Drain to Source Voltage (Vdss), Continuous Drain Current (Id), Maximum Rds(on), Gate Threshold Voltage, Gate Charge, Maximum Vgs, Input Capacitance (Ciss), Power Dissipation (Ptot), Operating Temperature Range, mounting method, and package type.

Q2: Are all the substitute MOSFETs mechanically compatible with IRF540ZSTRR?
A2: All substitute parts listed are provided in the TO-263-3, D2PAK package, ensuring mechanical and mounting compatibility.

Q3: What does RoHS status mean in the context of selecting a substitute MOSFET?
A3: RoHS status indicates compliance with hazardous substance restrictions. Selecting a RoHS3 compliant substitute is essential if the end product or production environment requires compliance.

Q4: Why are both active and obsolete substitutes included?
A4: Both active and obsolete alternatives are listed to support requirements for direct retrofit in legacy systems or ongoing support where supply sources may be limited.

Q5: Can the substitute models be used without changing the PCB layout?
A5: All listed substitutes use the TO-263-3, D2PAK package, which matches the original IRF540ZSTRR layout and footprint. Compatibility for PCB replacement is thereby maintained.

Q6: How does the maximum Gate Charge (Qg) affect substitution?
A6: Maximum Gate Charge affects switching behavior but must only be considered within the explicit values given. All listed substitutes provide their Qg for direct comparison.

Q7: If a lower Rds(on) is available among substitutes, can it be used?
A7: If all other parameters are met, a lower Rds(on) is electrically suitable, as this parameter impacts device conduction losses and thermal performance.

Q8: What do MSL and Operating Temperature mean for substitution?
A8: Moisture Sensitivity Level (MSL) and Operating Temperature define storage, handling, and safe operation range. All listed substitutes have MSL 1 and comparable or better operating temperature ranges.

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