IRF540Z N-Channel 100V 36A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF540Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 36A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts with active product status are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering improved availability and compliance status.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	100	V	Absolute Maximum Rating
Continuous Drain Current (Id)	36	A	@ 25°C (Tc)
On-State Resistance (Rds On)	26.5	mOhm	@ 22A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	4	V	@ 250µA
Gate Charge (Qg)	63	nC	@ 10V Vgs
Power Dissipation (Max)	92	W	@ Tc
Operating Temperature Range	-55 to 175	°C	Tj
Package Type	TO-220AB	—	Through Hole
FET Type	N-Channel	—	Metal Oxide Technology

Substitute Part Grouping Explanation

Substitution logic for the IRF540Z is based on the following critical parameters that must be maintained or exceeded:

Mandatory Compatibility Parameters:

Drain-to-Source Voltage (Vdss): 100V minimum
Package Type: TO-220AB (through-hole mounting)
FET Type: N-Channel MOSFET
Gate Threshold Voltage (Vgs(th)): 4V nominal
Maximum Gate Voltage (Vgs): ±20V
Operating Temperature Range: -55°C to 175°C

Performance Parameters (substitutes may exceed):

Continuous Drain Current (Id): 36A or higher
On-State Resistance (Rds On): 26.5mOhm or lower
Power Dissipation: 92W or higher
Gate Charge (Qg): 63nC or lower

Substitute parts are grouped into two categories:

Category 1: Direct Electrical Equivalents — Parts with identical or superior electrical specifications and active product status, suitable for direct replacement without circuit modification.

Category 2: Parametric Equivalents — Parts with comparable electrical performance within acceptable engineering tolerances, offering enhanced current handling or reduced on-state resistance, suitable for applications where the original specifications are met or exceeded.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Product Status	RoHS Status
IRF540Z	Infineon	100	36	26.5	63	92	Obsolete	Non-compliant
IRF540ZPBF	Infineon	100	36	26.5	63	92	Active	ROHS3 Compliant
AUIRF540Z	Infineon	100	36	26.5	63	92	Active	ROHS3 Compliant
IRF540PBF	Vishay Siliconix	100	28	77	72	150	Active	ROHS3 Compliant
PHP18NQ10T,127	Nexperia USA Inc.	100	18	90	21	79	Obsolete	ROHS3 Compliant
PSMN009-100P,127	NXP Semiconductors	100	75	8.8	156	230	Active	Not Specified
PSMN013-100PS,127	Nexperia USA Inc.	100	68	13.9	59	170	Obsolete	ROHS3 Compliant
PSMN015-100P,127	Nexperia USA Inc.	100	75	15	90	300	Obsolete	ROHS3 Compliant
PSMN016-100PS,127	Nexperia USA Inc.	100	57	16	49	148	Obsolete	ROHS3 Compliant
PSMN027-100PS,127	Nexperia USA Inc.	100	37	26.8	30	103	Obsolete	ROHS3 Compliant
PSMN5R6-100PS,127	Nexperia USA Inc.	100	100	5.6	141	306	Obsolete	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRF540ZPBF

IRF540ZPBF is the direct equivalent of IRF540Z, manufactured by Infineon Technologies with identical electrical specifications. This part maintains 100V Vdss, 36A continuous drain current, 26.5mOhm Rds On, and 92W power dissipation. IRF540ZPBF carries active product status and ROHS3 compliance, addressing the obsolescence and regulatory concerns of the original IRF540Z. Packaging is TO-220AB in tube format. This part is suitable for direct replacement without circuit modification.

Secondary Recommendation: AUIRF540Z

AUIRF540Z is a parametric equivalent manufactured by Infineon Technologies with identical electrical specifications to IRF540Z. This part provides active product status and ROHS3 compliance. Electrical performance matches the original part exactly: 100V Vdss, 36A Id, 26.5mOhm Rds On, 63nC gate charge, and 92W power dissipation. Packaging is TO-220AB in tube format. This part is suitable for direct replacement.

Alternative for Enhanced Performance: PSMN009-100P,127

PSMN009-100P,127 manufactured by NXP Semiconductors offers superior current handling (75A vs. 36A) and significantly reduced on-state resistance (8.8mOhm vs. 26.5mOhm). This part maintains 100V Vdss and TO-220AB package compatibility. Power dissipation capability is 230W, substantially higher than the original 92W. Product status is active. This part is suitable for applications requiring improved thermal performance or higher current capacity within the same voltage class and package.

Alternative for Balanced Performance: PSMN027-100PS,127

PSMN027-100PS,127 manufactured by Nexperia USA Inc. provides 37A continuous drain current (comparable to 36A) with 26.8mOhm on-state resistance (equivalent to 26.5mOhm). This part maintains 100V Vdss and TO-220AB package compatibility. Power dissipation is 103W, slightly exceeding the original 92W. Gate charge is reduced to 30nC, improving switching performance. Product status is obsolete; however, inventory availability is 23,005 pieces. This part is suitable for applications where the original specifications are met with minimal performance variation.

Not Recommended: IRF540PBF

IRF540PBF manufactured by Vishay Siliconix does not meet the continuous drain current requirement of the original IRF540Z. This part is rated for 28A (vs. 36A required), representing a 22% reduction in current capacity. On-state resistance is 77mOhm (vs. 26.5mOhm), resulting in higher conduction losses. While this part offers active product status and ROHS3 compliance, it is unsuitable for direct replacement in applications requiring the full 36A specification.

Not Recommended: PHP18NQ10T,127

PHP18NQ10T,127 manufactured by Nexperia USA Inc. provides only 18A continuous drain current, representing a 50% reduction from the IRF540Z specification. On-state resistance is 90mOhm, significantly higher than the required 26.5mOhm. Product status is obsolete. This part is unsuitable for direct replacement.

Frequently Asked Questions (FAQ)

Q1: Can IRF540ZPBF be used as a direct replacement for IRF540Z?

Yes. IRF540ZPBF is manufactured by Infineon Technologies with identical electrical specifications: 100V Vdss, 36A continuous drain current, 26.5mOhm on-state resistance, 63nC gate charge, and 92W power dissipation. Both parts use TO-220AB through-hole packaging. The primary differences are product status (IRF540ZPBF is active vs. IRF540Z obsolete) and RoHS compliance (IRF540ZPBF is ROHS3 compliant). No circuit modification is required.

Q2: What is the difference between IRF540ZPBF and AUIRF540Z?

Both parts are manufactured by Infineon Technologies with identical electrical specifications and active product status. IRF540ZPBF is supplied in tube packaging, while AUIRF540Z is also supplied in tube packaging. Both maintain 100V Vdss, 36A Id, 26.5mOhm Rds On, and 92W power dissipation. Both are ROHS3 compliant. Selection between these parts depends on supplier availability and packaging preferences.

Q3: Why is PSMN009-100P,127 listed as an alternative if it has higher current rating?

PSMN009-100P,127 exceeds the original IRF540Z specifications in current capacity (75A vs. 36A) and power dissipation (230W vs. 92W). However, it maintains the same 100V Vdss rating and TO-220AB package. The reduced on-state resistance (8.8mOhm vs. 26.5mOhm) results in lower conduction losses. This part is suitable for applications where the original 36A specification is met or where improved thermal performance is beneficial. The higher specifications do not create incompatibility; they provide design margin.

Q4: Can I use IRF540PBF as a substitute?

IRF540PBF is not recommended for direct replacement. This Vishay Siliconix part is rated for 28A continuous drain current, which is 22% below the IRF540Z specification of 36A. On-state resistance is 77mOhm compared to 26.5mOhm, resulting in higher power dissipation in the device. Applications requiring the full 36A specification will experience current limiting or thermal stress with this part.

Q5: What does "obsolete product status" mean for the IRF540Z?

Obsolete product status indicates that the manufacturer (Infineon Technologies) has discontinued production and support for the IRF540Z. While existing inventory may be available through distributors (1,900 pieces reported in stock), no new production is occurring. For new designs and long-term production, active-status equivalents such as IRF540ZPBF or AUIRF540Z are recommended to ensure supply chain continuity.

Q6: Are all substitute parts RoHS compliant?

No. IRF540Z is RoHS non-compliant. IRF540ZPBF and AUIRF540Z are ROHS3 compliant. Most Nexperia parts in the substitute list (PHP18NQ10T,127, PSMN013-100PS,127, PSMN015-100P,127, PSMN016-100PS,127, PSMN027-100PS,127, PSMN5R6-100PS,127) are ROHS3 compliant. PSMN009-100P,127 manufactured by NXP does not specify RoHS status in the provided data. For applications requiring RoHS compliance, verify the specific part's certification status with the manufacturer.

Q7: Do all substitute parts use the same TO-220AB package?

Yes. All substitute parts listed maintain the TO-220AB through-hole package format. This ensures mechanical compatibility with existing PCB layouts and heatsink mounting arrangements. No mechanical redesign is required when substituting between these parts.

Q8: What is the significance of gate charge (Qg) differences between parts?

Gate charge affects switching speed and gate drive circuit requirements. The IRF540Z has 63nC gate charge. PSMN027-100PS,127 has 30nC (lower, faster switching), while PSMN009-100P,127 has 156nC (higher, slower switching). Lower gate charge reduces switching losses and allows faster switching frequencies. Higher gate charge may require stronger gate drive circuits. For most applications, these differences are not critical; however, in high-frequency switching applications, gate charge becomes a design consideration.

Q9: Which substitute part offers the best on-state resistance performance?

PSMN009-100P,127 offers the lowest on-state resistance at 8.8mOhm (compared to 26.5mOhm for IRF540Z). This results in the lowest conduction losses and heat generation during operation. PSMN5R6-100PS,127 offers 5.6mOhm, the lowest among all listed parts. However, both of these parts have obsolete product status. For active-status parts with low on-state resistance, PSMN027-100PS,127 at 26.8mOhm is the closest match to the original specification.

Q10: Can I use a part with lower current rating if my application only requires partial current?

No. Using a part with lower current rating than the application requires creates risk of device failure, thermal stress, and reduced circuit reliability. The continuous drain current rating must equal or exceed the maximum sustained current in the application. If your application requires only 18A, then PHP18NQ10T,127 (18A rated) would be acceptable. However, if your application requires 36A, only parts rated for 36A or higher should be used.

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