IRF540STRR N-Channel 100V 28A MOSFET D2PAK Equivalent & Substitute Parts

Part Overview

The IRF540STRR is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage and 28A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to support ongoing design requirements, procurement continuity, and system maintenance where the original part is no longer available through standard distribution channels.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	28	A (Tc)
On-State Resistance (Rds On) @ 17A, 10V	77	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	72	nC
Input Capacitance (Ciss) @ 25V	1700	pF
Power Dissipation (Max)	3.7 (Ta), 150 (Tc)	W
Operating Temperature Range	−55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-263-3, D2PAK	—

Substitute Part Grouping Explanation

Substitute parts for the IRF540STRR are grouped based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Mandatory Matching Parameters:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Mounting Type: Surface Mount
Package: TO-263 (D2PAK) or equivalent mechanical footprint

Functional Compatibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 28A
Gate Threshold Voltage (Vgs(th)): Within ±20V maximum gate voltage specification
Operating Temperature Range: Minimum −55°C to 175°C
On-State Resistance (Rds On): Lower values indicate improved performance; higher values require application-level verification

Substitute parts are classified into two categories: Parametric Equivalents (identical electrical specifications and active product status) and Manufacturer Recommended Alternatives (functionally compatible with variations in secondary parameters such as gate charge, input capacitance, or power dissipation).

Parameter Comparison

Parameter	IRF540STRR	IRF540STRLPBF	IRF540STRRPBF	BUK9675-100A,118	IRF530NSTRLPBF	IRF540NSTRLPBF	PHB27NQ10T,118	STB30NF10T4
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Nexperia USA Inc.	Infineon Technologies	Infineon Technologies	Nexperia USA Inc.	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	100	100	100	100	100	100	100	100
Id @ 25°C (A)	28	28	28	23	17	33	28	35
Rds On @ 10V (mOhm)	77 @ 17A	77 @ 17A	77 @ 17A	72 @ 10A	90 @ 9A	44 @ 16A	50 @ 14A	45 @ 15A
Vgs(th) @ Id (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	2 @ 1mA	4 @ 250µA	4 @ 250µA	4 @ 1mA	4 @ 250µA
Qg @ 10V (nC)	72	72	72	—	37	71	30	55
Ciss @ 25V (pF)	1700	1700	1700	1704	920	1960	1240	1180
Power Dissipation (W)	3.7 (Ta), 150 (Tc)	3.7 (Ta), 150 (Tc)	3.7 (Ta), 150 (Tc)	99 (Tc)	3.8 (Ta), 70 (Tc)	130 (Tc)	107 (Tc)	115 (Tc)
Operating Temp (°C)	−55 to 175	−55 to 175	−55 to 175	−55 to 175	−55 to 175	−55 to 175	−55 to 175	−55 to 175
Package	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Inventory Status	846 Pcs	1900 Pcs	1400 Pcs	14995 Pcs	67060 Pcs	35300 Pcs	7904 Pcs	16100 Pcs

Engineering Selection Recommendations

Parametric Equivalents (Direct Substitutes):

IRF540STRLPBF and IRF540STRRPBF are parametric equivalents of the IRF540STRR. Both parts maintain identical electrical specifications (100V, 28A, 77mOhm Rds On, 72nC gate charge) and are manufactured by Vishay Siliconix. Both are classified as active product status and ROHS3 compliant, addressing regulatory requirements that the original obsolete part does not satisfy. The primary difference between these two equivalents is packaging format: IRF540STRLPBF is supplied in Tape & Reel (TR) format with 1900 units in stock, while IRF540STRRPBF is supplied in Cut Tape (CT) & Digi-Reel® format with 1400 units in stock. Selection between these two should be based on procurement and assembly process requirements.

Manufacturer Recommended Alternatives:

The following parts are manufacturer-recommended alternatives that satisfy the core electrical requirements (100V Vdss, N-Channel, D2PAK package, −55°C to 175°C operating range) but exhibit variations in secondary electrical parameters:

BUK9675-100A,118 (Nexperia USA Inc.): Rated for 23A continuous drain current, which is below the 28A specification of the IRF540STRR. This part is suitable only for applications where the actual current requirement does not exceed 23A. The part features lower on-state resistance (72mOhm @ 10A) and lower gate threshold voltage (2V @ 1mA). Product status is active with ROHS3 compliance. Automotive qualification (AEC-Q101) is available.

IRF530NSTRLPBF (Infineon Technologies): Rated for 17A continuous drain current, which is below the 28A specification. This part is suitable only for applications where the actual current requirement does not exceed 17A. The part features higher on-state resistance (90mOhm @ 9A) and lower input capacitance (920pF). Product status is active with ROHS3 compliance.

IRF540NSTRLPBF (Infineon Technologies): Rated for 33A continuous drain current, which exceeds the 28A specification of the IRF540STRR. This part is suitable for applications requiring higher current capability. The part features significantly lower on-state resistance (44mOhm @ 16A), higher input capacitance (1960pF), and higher power dissipation (130W Tc). Product status is active with ROHS3 compliance.

PHB27NQ10T,118 (Nexperia USA Inc.): Rated for 28A continuous drain current, matching the IRF540STRR specification. This part features lower on-state resistance (50mOhm @ 14A), lower gate charge (30nC), and lower input capacitance (1240pF). Product status is active with ROHS3 compliance. TrenchMOS™ technology series.

STB30NF10T4 (STMicroelectronics): Rated for 35A continuous drain current, which exceeds the 28A specification. This part is suitable for applications requiring higher current capability. The part features lower on-state resistance (45mOhm @ 15A), lower gate charge (55nC), and lower input capacitance (1180pF). Product status is active with ROHS3 compliance. STripFET™ II technology series.

All recommended alternatives are ROHS3 compliant and carry active product status, ensuring long-term availability and regulatory compliance superior to the obsolete IRF540STRR.

Frequently Asked Questions (FAQ)

Q: Can IRF540STRLPBF or IRF540STRRPBF be used as direct replacements for IRF540STRR?

A: Yes. IRF540STRLPBF and IRF540STRRPBF are parametric equivalents with identical electrical specifications. Both maintain 100V Vdss, 28A continuous drain current, 77mOhm on-state resistance, and all other key electrical parameters. The only differences are packaging format (Tape & Reel versus Cut Tape & Digi-Reel) and product status (both are active versus obsolete). No circuit modifications are required.

Q: What is the difference between the Tape & Reel and Cut Tape packaging options?

A: Tape & Reel (TR) packaging supplies components on continuous tape suitable for automated pick-and-place assembly equipment. Cut Tape (CT) & Digi-Reel® packaging supplies components on cut tape segments, typically used for manual assembly or lower-volume production. Both formats contain the same component in the same D2PAK package. Selection depends on assembly process capability and volume requirements.

Q: Why do some substitute parts have different drain current ratings?

A: Drain current rating reflects the maximum continuous current the device can safely conduct at specified temperature conditions. Parts with lower ratings (BUK9675-100A,118 at 23A, IRF530NSTRLPBF at 17A) are suitable only for applications where actual circuit current does not exceed their rating. Parts with higher ratings (IRF540NSTRLPBF at 33A, STB30NF10T4 at 35A) provide additional current margin and are suitable for higher-current applications. Selection must be based on actual circuit current requirements.

Q: What does on-state resistance (Rds On) variation mean for circuit performance?

A: On-state resistance determines power dissipation when the MOSFET conducts current. Lower Rds On values result in lower power dissipation and reduced heat generation. For example, PHB27NQ10T,118 with 50mOhm Rds On dissipates less power than IRF540STRR with 77mOhm Rds On at the same current level. Higher Rds On values require thermal management verification to ensure the device does not exceed maximum junction temperature limits.

Q: Are all substitute parts RoHS compliant?

A: All recommended substitute parts are ROHS3 compliant. The original IRF540STRR is RoHS non-compliant. ROHS3 compliance ensures the parts meet current environmental and regulatory requirements for electronic component manufacturing and use in regulated markets.

Q: Can I use IRF530NSTRLPBF or BUK9675-100A,118 if my circuit only requires 20A?

A: Yes, if your circuit requires only 20A continuous current, both IRF530NSTRLPBF (17A rating) and BUK9675-100A,118 (23A rating) can be used. However, BUK9675-100A,118 provides greater margin above the 20A requirement. Verify that the actual circuit current does not exceed the device rating under all operating conditions, including transient events and temperature extremes.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values (PHB27NQ10T,118 at 30nC, STB30NF10T4 at 55nC) result in faster switching and lower gate drive power requirements. Higher gate charge values (IRF540STRR at 72nC) require more gate drive energy. Selection depends on gate driver circuit capability and switching frequency requirements.

Q: What is the significance of input capacitance (Ciss) differences?

A: Input capacitance affects gate drive circuit design and switching speed. Lower input capacitance values (IRF530NSTRLPBF at 920pF, STB30NF10T4 at 1180pF) result in faster switching transitions and lower gate drive power. Higher input capacitance values (IRF540NSTRLPBF at 1960pF) require more gate drive energy. Selection depends on gate driver circuit design and switching frequency requirements.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed are supplied in TO-263-3 D2PAK (2 Leads + Tab) package, which is mechanically and electrically compatible with the IRF540STRR. No PCB layout modifications are required for package compatibility.

Q: What is the difference between Infineon HEXFET® and Nexperia TrenchMOS™ technology?

A: HEXFET® and TrenchMOS™ are proprietary MOSFET technology platforms from Infineon and Nexperia respectively. Both are advanced N-Channel MOSFET technologies that provide improved performance characteristics compared to conventional designs. The specific technology does not affect electrical compatibility; selection should be based on electrical parameter requirements and availability.

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