IRF540A N-Channel MOSFET 100V 28A TO-220-3 Equivalent & Substitute Parts

Part Overview

The IRF540A is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by onsemi, rated for 100V drain-to-source voltage and 28A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 107W.

The IRF540A is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and leverage active product lines from alternative manufacturers while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	28	A
Gate-to-Source Voltage (Vgs) Maximum	±20	V
On-State Drain Resistance (Rds On) @ 14A, 10V	52	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation Maximum	107	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the IRF540A is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 28A or greater at 25°C
Gate-to-Source Voltage (Vgs): ±20V or greater maximum rating
Package Type: TO-220-3 or TO-220AB (mechanically compatible through-hole packages)
FET Type: N-Channel MOSFET technology
Operating Temperature Range: -55°C to 175°C minimum

Secondary Compatibility Parameters:

On-State Drain Resistance (Rds On): Lower or equivalent values indicate improved performance
Power Dissipation: Equal or greater ratings ensure thermal capability
Gate Charge (Qg): Lower values reduce drive circuit requirements
Input Capacitance (Ciss): Lower values improve switching speed

All substitute parts listed meet or exceed the primary equivalence criteria. Variations in secondary parameters reflect manufacturing differences between vendors and device generations while maintaining functional compatibility.

Parameter Comparison

Parameter	IRF540A (Main)	IRL540PBF	IRF540NPBF	IRF540PBF	IRF540ZPBF	STP24NF10	STP30NF10
Manufacturer	onsemi	Vishay Siliconix	Infineon Technologies	Vishay Siliconix	Infineon Technologies	STMicroelectronics	STMicroelectronics
Vdss (V)	100	100	100	100	100	100	100
Id @ 25°C (A)	28	28	33	28	36	26	35
Rds On (mOhm)	52 @ 14A, 10V	77 @ 17A, 5V	44 @ 16A, 10V	77 @ 17A, 10V	26.5 @ 22A, 10V	60 @ 12A, 10V	45 @ 15A, 10V
Vgs(th) @ 250µA (V)	4	2	4	4	4	4	4
Vgs Maximum (V)	±20	±10	±20	±20	±20	±20	±20
Qg @ Vgs (nC)	78 @ 10V	64 @ 5V	71 @ 10V	72 @ 10V	63 @ 10V	41 @ 10V	55 @ 10V
Ciss @ 25V (pF)	1710	2200	1960	1700	1770	870	1180
Power Dissipation (W)	107	150	130	150	92	85	115
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220	TO-220
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalents (Highest Compatibility):

IRF540PBF (Vishay Siliconix) is the primary direct equivalent. It maintains identical voltage and current ratings (100V, 28A), matching gate-source voltage limits (±20V), and provides superior power dissipation (150W versus 107W). The device is in active production status with ROHS3 compliance. Inventory availability is substantial at 19,734 units.

IRL540PBF (Vishay Siliconix) provides direct electrical equivalence with 100V/28A ratings and enhanced power dissipation (150W). This variant features lower gate threshold voltage (2V versus 4V), reducing drive circuit requirements. Gate-source voltage is limited to ±10V, which may restrict application in circuits requiring ±20V gate drive. Active production status and ROHS3 compliance are confirmed.

Enhanced Current Capability Substitutes:

IRF540NPBF (Infineon Technologies HEXFET® series) offers increased continuous drain current (33A versus 28A) while maintaining 100V voltage rating and ±20V gate-source limits. On-state resistance is improved (44mOhm versus 52mOhm), and power dissipation is rated at 130W. This device is suitable for applications requiring higher current margins. Active production with ROHS3 compliance and extensive inventory (85,300 units).

IRF540ZPBF (Infineon Technologies HEXFET® series) provides the highest current rating (36A) and lowest on-state resistance (26.5mOhm) among all substitutes. Power dissipation is rated at 92W. This device is appropriate for high-efficiency switching applications where reduced conduction losses are critical. Active production status with ROHS3 compliance and 17,422 units in inventory.

STP30NF10 (STMicroelectronics STripFET™ II series) delivers 35A continuous drain current with 100V rating and ±20V gate-source limits. On-state resistance (45mOhm) and power dissipation (115W) are comparable to the main part. Gate charge is reduced (55nC versus 78nC), improving switching performance. Active production with ROHS3 compliance and high inventory (70,887 units).

Lower Current Alternative:

STP24NF10 (STMicroelectronics STripFET™ II series) is suitable only for applications where 26A continuous drain current is sufficient. This device offers the lowest gate charge (41nC) and input capacitance (870pF), enabling faster switching. Power dissipation is limited to 85W. Use is restricted to designs with reduced current requirements.

Compliance and Supply Chain Considerations:

All substitute parts are in active production status, ensuring long-term availability. IRF540PBF, IRF540NPBF, IRF540ZPBF, STP24NF10, and STP30NF10 carry ROHS3 compliance certification. IRL540PBF status is ROHS3 compliant. IRF540PBF is REACH Affected; all other substitutes are REACH Unaffected. Selection should account for regulatory requirements in target markets.

Frequently Asked Questions (FAQ)

Q: Can IRF540A be directly replaced with IRF540PBF?

A: Yes. IRF540PBF is a direct equivalent with identical voltage (100V) and current (28A) ratings, matching gate-source voltage limits (±20V), and superior power dissipation (150W). Mechanical compatibility is confirmed through TO-220-3 and TO-220AB package equivalence. The device is in active production with ROHS3 compliance.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: TO-220-3 and TO-220AB are mechanically and electrically compatible through-hole packages. Both feature three leads (Gate, Drain, Source) with identical pin spacing and mounting hole patterns. Substitution between these package designations does not affect circuit functionality or PCB layout compatibility.

Q: Which substitute offers the best performance improvement?

A: IRF540ZPBF provides the lowest on-state resistance (26.5mOhm) and highest current rating (36A), resulting in reduced conduction losses and improved efficiency. This device is optimal for applications prioritizing power dissipation minimization. IRF540NPBF offers balanced improvements across current (33A) and resistance (44mOhm) with extensive inventory availability.

Q: Can IRL540PBF be used in circuits requiring ±20V gate drive?

A: No. IRL540PBF is rated for ±10V maximum gate-source voltage, compared to ±20V for the IRF540A. Circuits designed for ±20V gate drive must use IRF540PBF, IRF540NPBF, IRF540ZPBF, STP24NF10, or STP30NF10. Exceeding the ±10V limit on IRL540PBF will cause device damage.

Q: Is STP24NF10 suitable as a direct replacement?

A: STP24NF10 is electrically compatible but rated for only 26A continuous drain current, compared to 28A for the IRF540A. This device is appropriate only for applications where the design current margin permits operation below 26A. For designs requiring the full 28A rating, use IRF540PBF, IRL540PBF, or higher-current alternatives.

Q: What are the inventory implications of selecting a substitute?

A: IRF540PBF (19,734 units), STP30NF10 (70,887 units), and IRF540NPBF (85,300 units) offer substantial inventory availability. IRL540PBF (3,100 units) and IRF540ZPBF (17,422 units) have moderate availability. STP24NF10 (15,265 units) is adequately stocked. Selection should account for production volume requirements and supply chain lead times.

Q: Are all substitutes ROHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification. IRF540PBF is REACH Affected; IRF540NPBF, IRF540ZPBF, IRL540PBF, STP24NF10, and STP30NF10 are REACH Unaffected. Regulatory requirements in target markets should guide final selection.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the device. Lower gate charge reduces drive circuit power consumption and enables faster switching. STP24NF10 (41nC) and IRF540ZPBF (63nC) offer reduced gate charge compared to IRF540A (78nC). Higher gate charge devices (IRL540PBF at 64nC, IRF540NPBF at 71nC, IRF540PBF at 72nC) require proportionally more drive energy but remain within acceptable switching performance ranges for most applications.

Q: What thermal considerations apply when substituting with higher-rated devices?

A: Substitute devices with higher power dissipation ratings (IRL540PBF and IRF540PBF at 150W, IRF540NPBF at 130W, STP30NF10 at 115W) provide improved thermal margins compared to the IRF540A (107W). These devices can operate at higher junction temperatures or with reduced heatsinking requirements. Devices with lower power ratings (STP24NF10 at 85W, IRF540ZPBF at 92W) require equivalent or enhanced thermal management to the original design.

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