IRF540 N-Channel MOSFET 100V 28A Equivalent & Substitute Parts

Part Overview

The IRF540 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with 28A continuous drain current at 25°C. This device is packaged in a TO-220AB through-hole configuration and is designed for general-purpose switching and amplification applications requiring moderate current handling at 100V operation.

The IRF540 from Vishay Siliconix is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and meet current regulatory compliance requirements including RoHS and REACH standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	28	A (Tc)
On-State Resistance (Rds On) @ 17A, 10V	77	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	72	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	1700	pF
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-220AB	—

Substitute Part Grouping Explanation

Substitution of the IRF540 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 100V Vdss specification to ensure safe operation in the same circuit topology.

Current Capability: Substitute parts are grouped by continuous drain current (Id) rating. The IRF540 specifies 28A at 25°C. Substitutes with equal or higher current ratings are electrically compatible; substitutes with lower current ratings are restricted to reduced-load applications.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Lower Rds On values indicate improved efficiency and reduced heat generation.

Gate Charge (Qg): This parameter influences switching speed and gate drive requirements. Variations in gate charge affect circuit timing and power consumption in switching applications.

Package and Mounting: All listed substitutes use TO-220AB or TO-220 through-hole packaging, maintaining mechanical and thermal interface compatibility.

Regulatory Compliance: Product status (Active vs. Obsolete) and RoHS/REACH compliance determine suitability for new designs and long-term supply availability.

Parameter Comparison

Part Number	Manufacturer	Product Status	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	RoHS Status
IRF540	Vishay Siliconix	Obsolete	100	28	77 @ 17A, 10V	72 @ 10V	150	Non-compliant
IRF540PBF	Vishay Siliconix	Active	100	28	77 @ 17A, 10V	72 @ 10V	150	ROHS3 Compliant
IRF530NPBF	Infineon Technologies	Active	100	17	90 @ 9A, 10V	37 @ 10V	70	ROHS3 Compliant
IRF540NPBF	Infineon Technologies	Active	100	33	44 @ 16A, 10V	71 @ 10V	130	ROHS3 Compliant
IRF540ZPBF	Infineon Technologies	Active	100	36	26.5 @ 22A, 10V	63 @ 10V	92	ROHS3 Compliant
PHP18NQ10T,127	Nexperia USA Inc.	Obsolete	100	18	90 @ 9A, 10V	21 @ 10V	79	ROHS3 Compliant
PSMN027-100PS,127	Nexperia USA Inc.	Obsolete	100	37	26.8 @ 15A, 10V	30 @ 10V	103	ROHS3 Compliant
STP24NF10	STMicroelectronics	Active	100	26	60 @ 12A, 10V	41 @ 10V	85	ROHS3 Compliant
STP30NF10	STMicroelectronics	Active	100	35	45 @ 15A, 10V	55 @ 10V	115	ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (Identical Electrical Performance):

IRF540PBF from Vishay Siliconix is the direct equivalent to the obsolete IRF540. This part maintains identical electrical specifications including 28A continuous drain current, 77mOhm on-state resistance, and 150W power dissipation. IRF540PBF is Active in product status and ROHS3 compliant, making it suitable for new designs and providing long-term supply availability.

Higher Current Capability Substitutes (Active Status):

IRF540NPBF (Infineon Technologies) and IRF540ZPBF (Infineon Technologies) provide higher current ratings of 33A and 36A respectively, with improved on-state resistance characteristics. Both are Active products with ROHS3 compliance. IRF540ZPBF offers the lowest on-state resistance (26.5mOhm) among all substitutes, resulting in reduced power dissipation and improved thermal performance. These parts are suitable for applications requiring enhanced current handling or improved efficiency.

STP30NF10 (STMicroelectronics) provides 35A continuous drain current with 45mOhm on-state resistance and is Active with ROHS3 compliance. This part offers performance between the IRF540 and higher-rated alternatives.

Lower Current Capability Substitutes:

IRF530NPBF (Infineon Technologies) and PHP18NQ10T,127 (Nexperia USA Inc.) provide reduced current ratings of 17A and 18A respectively. These parts are suitable only for applications with reduced current requirements. IRF530NPBF is Active; PHP18NQ10T,127 is Obsolete.

Obsolete Alternatives (Not Recommended for New Designs):

PHP18NQ10T,127 and PSMN027-100PS,127 are classified as Obsolete. While PSMN027-100PS,127 provides 37A current capability with low on-state resistance, its obsolete status limits supply availability and suitability for new production designs.

Frequently Asked Questions (FAQ)

Q: Can IRF540PBF be used as a direct replacement for IRF540?

A: Yes. IRF540PBF is the direct equivalent with identical electrical specifications. The primary difference is product status (Active vs. Obsolete) and RoHS compliance (ROHS3 vs. Non-compliant). IRF540PBF is recommended for all new applications.

Q: What is the difference between IRF540NPBF and IRF540ZPBF?

A: Both are Infineon Technologies HEXFET® devices with 100V Vdss rating. IRF540NPBF provides 33A continuous drain current with 44mOhm on-state resistance. IRF540ZPBF provides 36A continuous drain current with 26.5mOhm on-state resistance. IRF540ZPBF offers superior current handling and lower power dissipation due to reduced on-state resistance.

Q: Can I use STP24NF10 or STP30NF10 instead of IRF540?

A: STP24NF10 and STP30NF10 are compatible substitutes with 26A and 35A continuous drain current ratings respectively. Both maintain the 100V Vdss specification and TO-220 through-hole packaging. STP30NF10 provides current capability closest to the original IRF540 (28A). Both are Active products with ROHS3 compliance.

Q: Are all substitute parts available in the same TO-220AB package?

A: All substitute parts use TO-220AB or TO-220 through-hole packaging, which are mechanically and thermally compatible. The TO-220 and TO-220AB designations refer to the same physical package with identical pin configuration and thermal interface.

Q: What is the significance of on-state resistance (Rds On) when selecting a substitute?

A: On-state resistance directly determines power dissipation and heat generation. Lower Rds On values result in reduced power loss and improved thermal performance. For example, IRF540ZPBF (26.5mOhm) dissipates significantly less heat than the original IRF540 (77mOhm) at equivalent current levels, improving circuit efficiency and reliability.

Q: Why are some substitute parts listed as Obsolete?

A: Obsolete products have been discontinued by manufacturers and are no longer in active production. While existing inventory may be available, long-term supply cannot be guaranteed. For new designs, Active products such as IRF540PBF, IRF540NPBF, IRF540ZPBF, STP24NF10, and STP30NF10 are recommended.

Q: What does RoHS3 compliance mean?

A: ROHS3 compliance indicates conformance to the Restriction of Hazardous Substances Directive 3, which restricts the use of specific hazardous materials in electrical and electronic equipment. All recommended Active substitutes are ROHS3 compliant, making them suitable for applications subject to environmental and regulatory requirements.

Q: Can I use a lower-current substitute like IRF530NPBF (17A) in place of IRF540 (28A)?

A: IRF530NPBF is electrically compatible but rated for only 17A continuous drain current. This substitute is suitable only for applications with reduced current requirements. Using a lower-rated device in a circuit designed for 28A operation will result in thermal stress and potential device failure.

Q: What is gate charge (Qg) and why does it vary among substitutes?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge values enable faster switching and reduce gate drive power requirements. Variations in gate charge among substitutes affect switching speed and circuit timing, particularly in high-frequency applications.

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