IRF5305STRRPBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF5305STRRPBF is a P-Channel MOSFET manufactured by Infineon Technologies, classified within the HEXFET® series. This device operates at 55V drain-to-source voltage with a continuous drain current rating of 31A at 25°C case temperature. The component is packaged in D2PAK (TO-263-3) surface mount configuration with a tab for thermal management.

The IRF5305STRRPBF carries an Obsolete product status. Locating equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this P-Channel MOSFET topology.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	31	A (Tc)
On-Resistance (Rds On) @ 16A, 10V	60	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	63	nC
Input Capacitance (Ciss) @ 25V	1200	pF
Power Dissipation (Max)	3.8 (Ta), 110 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF5305STRRPBF is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: P-Channel topology
Package Type: D2PAK (TO-263-3) surface mount configuration
Drain-to-Source Voltage (Vdss): Equal to or greater than 55V
Continuous Drain Current (Id): Equal to or greater than 31A at 25°C case temperature
Gate Threshold Voltage (Vgs(th)): Within compatible operating range (approximately 4V to 4.5V @ 250µA)
Gate Charge (Qg): Similar magnitude to minimize drive circuit redesign
Input Capacitance (Ciss): Compatible with existing gate drive circuitry
Operating Temperature Range: Minimum -55°C to 175°C (TJ)
RoHS and REACH Compliance: ROHS3 Compliant, REACH Unaffected

Substitution Logic: Parts meeting or exceeding all primary criteria in the same package type are classified as direct substitutes. Parts with enhanced electrical ratings (higher Vdss, higher Id, or lower Rds On) remain functionally compatible when the application does not require the exact original specifications. Parts with reduced ratings below the original specifications are not suitable substitutes.

Parameter Comparison

Parameter	IRF5305STRRPBF (Main)	IRF5305STRLPBF (Substitute)	IXTA52P10P (Substitute)
Manufacturer	Infineon Technologies	Infineon Technologies	IXYS
FET Type	P-Channel	P-Channel	P-Channel
Vdss (V)	55	55	100
Id @ 25°C (A)	31	31	52
Rds On @ Rated Conditions (mOhm)	60 @ 16A, 10V	60 @ 16A, 10V	50 @ 52A, 10V
Vgs(th) @ 250µA (V)	4	4	4.5
Qg @ 10V (nC)	63	63	60
Ciss @ 25V (pF)	1200	1200	2845
Power Dissipation Max (W)	3.8 (Ta), 110 (Tc)	3.8 (Ta), 110 (Tc)	300 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 150
Package	D2PAK (TO-263-3)	D2PAK (TO-263-3)	TO-263AA
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IRF5305STRLPBF (Infineon Technologies)

The IRF5305STRLPBF is the manufacturer-recommended substitute for the obsolete IRF5305STRRPBF. This part maintains identical electrical specifications: 55V Vdss, 31A continuous drain current, 60mOhm Rds On, and 63nC gate charge. Both devices share the same D2PAK package footprint and thermal characteristics (110W @ Tc). The IRF5305STRLPBF carries Active product status with 37,036 units in stock, ensuring supply chain continuity. Packaging differs only in format (Cut Tape & Digi-Reel® versus reel configuration), which does not affect electrical or mechanical compatibility. This substitute requires no circuit redesign and provides direct pin-for-pin replacement capability. ROHS3 compliance and REACH unaffected status are maintained.

IXTA52P10P (IXYS)

The IXTA52P10P is a higher-performance P-Channel MOSFET substitute with enhanced electrical ratings. This device operates at 100V Vdss (versus 55V), supports 52A continuous drain current (versus 31A), and delivers 300W power dissipation at case temperature (versus 110W). The IXTA52P10P maintains compatible gate threshold voltage (4.5V @ 250µA) and similar gate charge (60nC @ 10V). Input capacitance is elevated at 2845pF (versus 1200pF), which may require gate drive circuit evaluation for switching frequency compatibility. The device is packaged in TO-263AA surface mount configuration, maintaining mechanical compatibility with D2PAK footprints. Operating temperature range extends to -55°C to 150°C (versus 175°C maximum junction temperature). IXTA52P10P carries Active product status with 5,100 units in stock. This substitute is suitable for applications requiring higher voltage or current headroom, provided gate drive circuitry can accommodate increased input capacitance.

Frequently Asked Questions (FAQ)

Q: Can IRF5305STRLPBF directly replace IRF5305STRRPBF without circuit modification?

A: Yes. The IRF5305STRLPBF is electrically and mechanically identical to the IRF5305STRRPBF. Both devices feature 55V Vdss, 31A continuous drain current, 60mOhm Rds On, and D2PAK packaging. The only difference is packaging format (Cut Tape & Digi-Reel® versus standard reel). No circuit redesign is required.

Q: Is IXTA52P10P a suitable substitute for IRF5305STRRPBF?

A: IXTA52P10P is a functional substitute with enhanced electrical ratings. It provides higher voltage (100V versus 55V) and current (52A versus 31A) capability, making it suitable for applications requiring additional performance margin. However, the elevated input capacitance (2845pF versus 1200pF) may require gate drive circuit evaluation. The operating temperature maximum is 150°C versus 175°C for the original part.

Q: What is the primary reason for finding substitutes for IRF5305STRRPBF?

A: The IRF5305STRRPBF carries Obsolete product status. Manufacturer supply is discontinued. Substitute parts ensure design continuity and support ongoing production without redesign.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both IRF5305STRLPBF and IXTA52P10P are ROHS3 Compliant and REACH Unaffected, matching the compliance status of the original IRF5305STRRPBF.

Q: Does package type affect substitution eligibility?

A: Package type is a critical substitution criterion. IRF5305STRLPBF uses D2PAK (TO-263-3) packaging, identical to the original part. IXTA52P10P uses TO-263AA packaging, which is mechanically compatible with D2PAK footprints but may have minor dimensional variations. Verify PCB layout compatibility before implementation.

Q: What is the significance of gate charge (Qg) in substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. IRF5305STRRPBF and IRF5305STRLPBF both specify 63nC @ 10V, ensuring identical gate drive circuit performance. IXTA52P10P specifies 60nC @ 10V, which is compatible but slightly lower, potentially reducing switching losses.

Q: How does input capacitance (Ciss) affect circuit performance?

A: Input capacitance affects gate drive circuit design and switching frequency response. IRF5305STRRPBF and IRF5305STRLPBF both specify 1200pF @ 25V. IXTA52P10P specifies 2845pF @ 25V, which is significantly higher. Applications operating at high switching frequencies may require gate drive circuit redesign to maintain performance with IXTA52P10P.

Q: What inventory levels are available for each substitute?

A: IRF5305STRLPBF has 37,036 units in stock (Active status). IXTA52P10P has 5,100 units in stock (Active status). Both provide adequate supply for production requirements.

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