IRF5305STRR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF5305STRR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 31A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and production continuity. The part operates across a temperature range of -55°C to 175°C and is designed for applications requiring moderate voltage and current switching capabilities in compact surface mount form factors.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	31	A (Tc)
Rds On (Max) @ 16A, 10V	60	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	63	nC
Input Capacitance (Ciss) @ 25V	1200	pF
Power Dissipation (Max)	3.8 (Ta), 110 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRF5305STRR is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: P-Channel topology
Drain-to-Source Voltage (Vdss): Equal to or greater than 55V
Continuous Drain Current (Id): Equal to or greater than 31A at 25°C
On-State Resistance (Rds On): Equal to or less than 60mOhm at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±1V of 4V nominal
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: Minimum -55°C to 175°C

Substitute Categories:

Category 1: Parametric Equivalent IRF5305STRLPBF maintains identical electrical specifications to the main part with matching Vdss (55V), Id (31A), Rds On (60mOhm), and package configuration. The primary distinction is product status (Active vs. Obsolete) and RoHS compliance level.

Category 2: Manufacturer Recommended Substitutes FQB34P10TM and IXTA52P10P exceed the minimum electrical requirements with higher voltage ratings (100V) and current capabilities (33.5A and 52A respectively). These parts maintain D2PAK packaging and are suitable for applications where the original 55V specification provides insufficient design margin.

Parameter Comparison

Parameter	IRF5305STRR	IRF5305STRLPBF	FQB34P10TM	IXTA52P10P
Manufacturer	Infineon	Infineon	onsemi	IXYS
FET Type	P-Channel	P-Channel	P-Channel	P-Channel
Vdss (V)	55	55	100	100
Id @ 25°C (A)	31	31	33.5	52
Rds On (mOhm)	60 @ 16A, 10V	60 @ 16A, 10V	60 @ 16.75A, 10V	50 @ 52A, 10V
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	4.5 @ 250µA
Qg (nC)	63 @ 10V	63 @ 10V	110 @ 10V	60 @ 10V
Ciss (pF)	1200 @ 25V	1200 @ 25V	2910 @ 25V	2845 @ 25V
Power Dissipation (W)	3.8 (Ta), 110 (Tc)	3.8 (Ta), 110 (Tc)	3.75 (Ta), 155 (Tc)	300 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 150
Package	D2PAK	D2PAK	D2PAK	TO-263AA
Product Status	Obsolete	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF5305STRLPBF Selection Criteria: This part is the direct parametric equivalent to IRF5305STRR with identical electrical performance across all specified parameters. Selection of IRF5305STRLPBF is appropriate when design specifications require exact electrical matching and the application can accommodate the transition from obsolete to active product status. This part carries ROHS3 compliance certification, addressing regulatory requirements that may not apply to the original non-compliant device. Packaging format (Cut Tape & Digi-Reel) differs from the original but maintains D2PAK surface mount compatibility.

FQB34P10TM Selection Criteria: This onsemi QFET device provides higher voltage rating (100V vs. 55V) and marginally increased current capability (33.5A vs. 31A) while maintaining equivalent on-state resistance (60mOhm). Selection is appropriate for applications requiring enhanced voltage margin or where design specifications permit operation at higher voltage ratings. Gate charge increases to 110nC, and input capacitance increases to 2910pF, which may affect switching speed characteristics. ROHS3 compliance and active product status support long-term supply continuity.

IXTA52P10P Selection Criteria: This IXYS PolarP device offers the highest current capability (52A) and lowest on-state resistance (50mOhm) among substitute options, with 100V voltage rating. Selection is appropriate for applications requiring maximum current handling or lowest conduction losses. Gate charge remains at 60nC, comparable to the original part. Operating temperature maximum is 150°C, which is 25°C lower than the original specification. ROHS3 compliance and active product status ensure supply availability. Packaging is TO-263AA, maintaining D2PAK form factor compatibility.

Frequently Asked Questions (FAQ)

Q: Can IRF5305STRLPBF be used as a direct replacement for IRF5305STRR?

A: Yes. IRF5305STRLPBF is a parametric equivalent with identical electrical specifications: 55V Vdss, 31A continuous drain current, 60mOhm Rds On, and D2PAK package. The primary differences are product status (Active vs. Obsolete) and RoHS compliance level (ROHS3 vs. Non-compliant). Electrical performance and pin configuration are identical.

Q: What are the key differences between the 55V-rated IRF5305STRR and the 100V-rated substitutes?

A: The 100V-rated devices (FQB34P10TM and IXTA52P10P) provide higher voltage margin for applications operating near the 55V limit. FQB34P10TM maintains the 31A current specification with equivalent Rds On. IXTA52P10P offers higher current capability (52A) and lower Rds On (50mOhm). Both 100V devices have higher input capacitance (2910pF and 2845pF respectively vs. 1200pF), which may increase switching losses in high-frequency applications.

Q: Are all substitute parts compatible with existing D2PAK PCB layouts?

A: IRF5305STRLPBF and FQB34P10TM use standard D2PAK (TO-263-3) packaging with identical pin configuration and footprint compatibility. IXTA52P10P uses TO-263AA variant, which maintains D2PAK form factor and pin compatibility but may have minor dimensional variations. Verification of specific package drawings is recommended for high-density layouts.

Q: Which substitute part should be selected for maximum design margin?

A: Selection depends on application requirements. For voltage margin, FQB34P10TM or IXTA52P10P (100V rating) provide 45V additional headroom. For current capability and conduction efficiency, IXTA52P10P offers 52A rating and 50mOhm Rds On. For closest electrical match to original specifications, IRF5305STRLPBF is appropriate.

Q: What is the impact of higher gate charge in FQB34P10TM?

A: FQB34P10TM has gate charge of 110nC compared to 63nC in the original part. Higher gate charge increases the time required to switch the device on or off, which may increase switching losses in applications operating at high switching frequencies. Gate drive circuit design should be verified to ensure adequate drive current capability.

Q: Are all substitute parts RoHS compliant?

A: IRF5305STRLPBF, FQB34P10TM, and IXTA52P10P all carry ROHS3 compliance certification. The original IRF5305STRR is RoHS non-compliant. Selection of compliant substitutes is necessary for applications subject to RoHS regulatory requirements.

Q: What is the significance of the lower maximum operating temperature in IXTA52P10P?

A: IXTA52P10P has a maximum junction temperature of 150°C compared to 175°C in the original part and other substitutes. Applications requiring operation at junction temperatures above 150°C must use alternative substitutes. Thermal design calculations should verify that maximum junction temperature remains below 150°C under worst-case operating conditions.

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