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IRF530 N-Channel MOSFET 100V 14A TO-220AB Equivalent & Substitute Parts
Part Overview
The IRF530 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage and 14A continuous drain current in a through-hole TO-220AB package. The main part number IRF530 is classified as obsolete, with 7,247 pieces in current inventory. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and long-term component availability. Substitute parts maintain the same voltage and package specifications while offering improved electrical characteristics or active product status.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 100 | V |
| Continuous Drain Current (Id) @ 25°C | 14 | A |
| On-State Resistance (Rds On) @ 8.4A, 10V | 160 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 26 | nC |
| Power Dissipation (Max) | 88 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole |
Substitute Part Grouping Explanation
Substitute parts for the IRF530 are classified into two categories based on electrical and mechanical compatibility:
Direct Equivalents (Parametric Match): Parts that maintain identical or near-identical electrical specifications across all critical parameters including Vdss (100V), package type (TO-220AB), mounting method (through hole), and operating temperature range (-55°C to 175°C). These parts are pin-compatible and functionally interchangeable without circuit modification.
Functional Equivalents (Voltage and Package Match): Parts that maintain the same Vdss rating (100V) and TO-220AB package but may differ in continuous drain current (Id), on-state resistance (Rds On), gate charge (Qg), or power dissipation. These parts are suitable for applications where the IRF530 specifications exceed design requirements or where improved performance characteristics are acceptable.
Substitution eligibility is determined by the following parameters:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
- Package Type: Must be TO-220AB or TO-220-3 (mechanically compatible)
- Mounting Type: Must be through hole
- Operating Temperature Range: Must support -55°C to 175°C minimum
- FET Type: Must be N-Channel MOSFET
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Power Dissipation (W) | Product Status | Package |
|---|---|---|---|---|---|---|---|---|
| IRF530 | Vishay Siliconix | 100 | 14 | 160 @ 8.4A, 10V | 26 @ 10V | 88 | Obsolete | TO-220AB |
| IRF530PBF | Vishay Siliconix | 100 | 14 | 160 @ 8.4A, 10V | 26 @ 10V | 88 | Active | TO-220AB |
| IRF530PBF-BE3 | Vishay Siliconix | 100 | 14 | 160 @ 8.4A, 10V | 26 @ 10V | 88 | Active | TO-220AB |
| IRF530NPBF | Infineon Technologies | 100 | 17 | 90 @ 9A, 10V | 37 @ 10V | 70 | Active | TO-220AB |
| IRL520NPBF | Infineon Technologies | 100 | 10 | 180 @ 6A, 10V | 20 @ 5V | 48 | Not For New Designs | TO-220AB |
| PHP18NQ10T,127 | Nexperia USA Inc. | 100 | 18 | 90 @ 9A, 10V | 21 @ 10V | 79 | Obsolete | TO-220AB |
| RFP12N10L | onsemi | 100 | 12 | 200 @ 12A, 5V | Not Specified | 60 | Active | TO-220-3 |
Engineering Selection Recommendations
Primary Recommendation: IRF530PBF
IRF530PBF is the direct equivalent substitute for the obsolete IRF530. Manufactured by Vishay Siliconix, it maintains identical electrical specifications (100V, 14A, 160mOhm Rds On, 26nC gate charge, 88W power dissipation) and package configuration (TO-220AB). The part is classified as active with ROHS3 compliance and REACH affected status. Inventory availability is 25,400 pieces. This part provides direct pin-for-pin compatibility with no circuit modifications required.
Secondary Recommendation: IRF530PBF-BE3
IRF530PBF-BE3 is a parametric equivalent manufactured by Vishay Siliconix with identical electrical specifications to IRF530PBF. It maintains 100V Vdss, 14A continuous drain current, and TO-220AB package. The part is active with ROHS3 compliance. Inventory is 1,609 pieces. This variant is suitable where specific manufacturing or traceability requirements necessitate the BE3 designation.
Alternative Recommendation: IRF530NPBF (Infineon Technologies)
IRF530NPBF is manufactured by Infineon Technologies under the HEXFET® series. While maintaining the 100V Vdss rating and TO-220AB package, this part offers improved electrical performance: 17A continuous drain current (versus 14A), 90mOhm Rds On (versus 160mOhm), and 70W power dissipation (versus 88W). The part is active with ROHS3 compliance and REACH unaffected status. Inventory is 85,200 pieces. This part is suitable for applications where the IRF530 current rating is marginal or where lower on-state resistance is beneficial for thermal management.
Conditional Recommendation: PHP18NQ10T,127 (Nexperia USA Inc.)
PHP18NQ10T,127 is a TrenchMOS™ technology MOSFET rated for 100V and 18A continuous drain current in TO-220AB package. On-state resistance is 90mOhm at 9A, 10V, with 21nC gate charge and 79W power dissipation. The part is classified as obsolete with ROHS3 compliance. Inventory is 6,082 pieces. This part is suitable for applications requiring higher current capacity than the IRF530 but is not recommended for new designs due to obsolete status.
Not Recommended: IRL520NPBF (Infineon Technologies)
IRL520NPBF is classified as "Not For New Designs" and is therefore not suitable for ongoing production or new design implementations. While it maintains 100V Vdss and TO-220AB package, the lower 10A continuous drain current and higher 180mOhm Rds On make it a downgrade from the IRF530 specifications.
Not Recommended: RFP12N10L (onsemi)
RFP12N10L is rated for 12A continuous drain current with 200mOhm Rds On at 5V drive voltage. While the part is active and ROHS3 compliant, the lower current rating and higher on-state resistance represent a downgrade from IRF530 specifications. Additionally, the maximum gate voltage is ±10V (versus ±20V for IRF530) and operating temperature maximum is 150°C (versus 175°C for IRF530).
Frequently Asked Questions (FAQ)
Q: Can IRF530PBF be used as a direct replacement for IRF530?
A: Yes. IRF530PBF is manufactured by the same company (Vishay Siliconix) and maintains identical electrical specifications and package configuration. The part is pin-for-pin compatible and requires no circuit modifications. IRF530PBF is active with current inventory availability.
Q: What is the difference between IRF530PBF and IRF530PBF-BE3?
A: Both parts are manufactured by Vishay Siliconix with identical electrical specifications (100V, 14A, 160mOhm Rds On, 26nC gate charge, 88W power dissipation) and TO-220AB package. The BE3 designation indicates a specific manufacturing or traceability variant. Selection between these parts depends on procurement or quality requirements.
Q: Is IRF530NPBF a suitable substitute for IRF530?
A: Yes, with performance improvements. IRF530NPBF maintains the 100V Vdss rating and TO-220AB package but offers higher continuous drain current (17A versus 14A), lower on-state resistance (90mOhm versus 160mOhm), and lower power dissipation (70W versus 88W). The part is manufactured by Infineon Technologies and is active. It is suitable for applications where the IRF530 specifications are marginal or where improved thermal performance is desired.
Q: Why is IRL520NPBF not recommended?
A: IRL520NPBF is classified as "Not For New Designs" by the manufacturer. Additionally, it represents a downgrade from IRF530 specifications with lower continuous drain current (10A versus 14A) and higher on-state resistance (180mOhm versus 160mOhm). New designs should not incorporate this part.
Q: Can PHP18NQ10T,127 replace IRF530 in production?
A: PHP18NQ10T,127 maintains 100V Vdss and TO-220AB package with higher current capacity (18A versus 14A) and lower on-state resistance (90mOhm versus 160mOhm). However, the part is classified as obsolete, making it unsuitable for long-term production continuity. IRF530PBF or IRF530NPBF are preferred alternatives.
Q: What are the key parameters that determine substitution compatibility?
A: Substitution compatibility is determined by: (1) Drain-to-Source Voltage (Vdss) equal to or exceeding 100V, (2) Package type TO-220AB or mechanically compatible TO-220-3, (3) Through-hole mounting type, (4) Operating temperature range supporting -55°C to 175°C minimum, and (5) N-Channel MOSFET technology. Continuous drain current, on-state resistance, and gate charge may vary within acceptable application limits.
Q: Is the TO-220-3 package compatible with TO-220AB?
A: TO-220-3 and TO-220AB are mechanically compatible three-lead through-hole packages with identical pin spacing and mounting footprint. Parts in either package designation can be used interchangeably on the same PCB layout.
Q: What is the inventory status for substitute parts?
A: IRF530PBF has 25,400 pieces in stock (highest availability). IRF530NPBF has 85,200 pieces in stock. IRF530PBF-BE3 has 1,609 pieces. PHP18NQ10T,127 has 6,082 pieces. RFP12N10L has 15,265 pieces. IRL520NPBF has 34,700 pieces. Inventory levels should be verified with suppliers for current availability.
Q: What compliance certifications apply to substitute parts?
A: IRF530PBF, IRF530PBF-BE3, and IRF530NPBF are ROHS3 compliant. IRF530PBF is REACH affected. IRF530NPBF is REACH unaffected. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. Compliance requirements should be verified against specific application and regional regulations.
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