IRF530 MOSFET N-Channel 100V 14A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF530 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage and 14A continuous drain current in the TO-220 package. This device is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The IRF530 operates across a temperature range of -55°C to 175°C and is suitable for switching applications requiring moderate power dissipation up to 60W.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	14	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	160 mOhm @ 7A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	21	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	458	pF @ 25V
Power Dissipation (Max)	60	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Equivalent and substitute parts for the IRF530 are identified based on the following critical parameters that determine functional interchangeability:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 100V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package: TO-220-3 (Through Hole)
Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
Maximum Gate Voltage (Vgs): ±20V
Operating Temperature Range: -55°C to 175°C

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 14A
Rds On (Max) @ 10V: Equal to or less than 160 mOhm
Power Dissipation: Equal to or greater than 60W

The substitute parts IRF530NPBF (Infineon Technologies) and IRF530PBF (Vishay Siliconix) meet all primary matching criteria and maintain electrical compatibility within the specified operating conditions. Both substitutes are available in active product status with improved RoHS compliance compared to the obsolete IRF530.

Parameter Comparison

Parameter	IRF530 (STMicroelectronics)	IRF530NPBF (Infineon)	IRF530PBF (Vishay)
Drain to Source Voltage (Vdss)	100 V	100 V	100 V
Continuous Drain Current (Id) @ 25°C	14 A	17 A	14 A
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	160 mOhm @ 7A, 10V	90 mOhm @ 9A, 10V	160 mOhm @ 8.4A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4 V @ 250µA	4 V @ 250µA	4 V @ 250µA
Gate Charge (Qg) @ Vgs	21 nC @ 10V	37 nC @ 10V	26 nC @ 10V
Maximum Gate Voltage (Vgs)	±20 V	±20 V	±20 V
Input Capacitance (Ciss) @ Vds	458 pF @ 25V	920 pF @ 25V	670 pF @ 25V
Power Dissipation (Max)	60 W	70 W	88 W
Operating Temperature Range	-55 to 175 °C	-55 to 175 °C	-55 to 175 °C
Package Type	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF530NPBF (Infineon Technologies HEXFET®)

The IRF530NPBF is suitable for applications requiring enhanced current handling and reduced on-resistance. This device delivers 17A continuous drain current compared to the original 14A specification, with significantly lower Rds On of 90 mOhm at 9A. The IRF530NPBF is ROHS3 compliant and maintains active product status, ensuring long-term availability and supply chain stability. The increased power dissipation rating of 70W provides additional thermal margin. Gate charge is elevated at 37 nC, which may impact switching speed in high-frequency applications.

IRF530PBF (Vishay Siliconix)

The IRF530PBF maintains electrical equivalence to the original IRF530 with matched 14A continuous drain current and 160 mOhm Rds On specification. This device offers the highest power dissipation rating at 88W, providing superior thermal performance. The IRF530PBF is ROHS3 compliant and actively produced. Gate charge of 26 nC represents a moderate increase from the original 21 nC. REACH status is affected for this device, requiring compliance verification for specific end-use applications.

Both substitute parts are electrically compatible with the obsolete IRF530 and support direct replacement in TO-220 through-hole mounting configurations. Selection between IRF530NPBF and IRF530PBF depends on specific application requirements regarding current capacity, thermal dissipation, and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IRF530NPBF and IRF530PBF be used interchangeably with the original IRF530?

A: Both substitute parts are electrically compatible with the IRF530 for applications operating within the specified voltage (100V Vdss), current (14A minimum), and temperature (-55°C to 175°C) ranges. All three devices share identical gate threshold voltage, maximum gate voltage, and package configuration. Direct substitution is supported in TO-220 through-hole circuit designs.

Q: What are the differences in on-resistance between the three devices?

A: The IRF530 and IRF530PBF both specify 160 mOhm maximum Rds On at 10V gate drive. The IRF530NPBF offers improved performance with 90 mOhm Rds On, resulting in lower conduction losses and reduced heat generation. This lower on-resistance makes the IRF530NPBF advantageous for high-current or continuous-duty applications.

Q: How do gate charge differences affect circuit design?

A: The original IRF530 specifies 21 nC gate charge at 10V. The IRF530PBF increases this to 26 nC, while the IRF530NPBF reaches 37 nC. Higher gate charge requires greater driver current or longer switching times. Applications with fast switching requirements or current-limited gate drivers may experience performance changes with the IRF530NPBF due to its elevated gate charge specification.

Q: Are there RoHS compliance considerations for these substitutes?

A: The original IRF530 is RoHS non-compliant. Both substitute parts, IRF530NPBF and IRF530PBF, are ROHS3 compliant, meeting current environmental regulations. The IRF530PBF carries REACH-affected status, requiring compliance verification for specific geographic markets and end-use applications.

Q: What is the impact of increased input capacitance in the substitutes?

A: The IRF530 specifies 458 pF input capacitance at 25V. The IRF530PBF increases this to 670 pF, and the IRF530NPBF to 920 pF. Higher input capacitance increases gate charge requirements and may affect switching speed in circuits with limited gate drive capability. High-frequency switching applications should account for these capacitance differences during circuit analysis.

Q: Can these devices be used in applications exceeding 14A continuous current?

A: The IRF530NPBF is rated for 17A continuous drain current, supporting applications requiring higher current capacity than the original 14A specification. The IRF530PBF maintains the 14A rating. Both devices support the original 14A requirement. Application of either device at currents exceeding their rated specifications is not supported.

Q: What are the thermal considerations when selecting between these substitutes?

A: The original IRF530 dissipates up to 60W. The IRF530PBF provides the highest thermal capability at 88W, followed by the IRF530NPBF at 70W. Applications with high power dissipation or limited heatsinking benefit from the IRF530PBF. The lower on-resistance of the IRF530NPBF also reduces conduction losses, indirectly improving thermal performance in current-limited scenarios.

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