IRF5210STRR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF5210STRR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 40A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The IRF5210STRR belongs to the HEXFET® series and is designed for applications requiring P-Channel switching and linear regulation in power management circuits.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	40	A (Tc)
On-Resistance (Rds On) @ 24A, 10V	60	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	180	nC
Input Capacitance (Ciss) @ 25V	2700	pF
Power Dissipation (Tc)	200	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRF5210STRR is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must meet or exceed 40A at 25°C
On-Resistance (Rds On): Should not significantly exceed 60mOhm to maintain thermal performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V nominal specification
Package Type: Must be D2PAK (TO-263-3) surface mount configuration

Mechanical Compatibility:

Mounting type: Surface mount only
Lead configuration: 2 Leads + Tab (D2PAK standard)
Moisture sensitivity: MSL 1 (Unlimited)

The substitute parts listed below meet these criteria while maintaining functional equivalence for P-Channel 100V MOSFET applications.

Parameter Comparison

Parameter	IRF5210STRR (Main)	FQB34P10TM	IXTA52P10P	Unit
Manufacturer	Infineon Technologies	onsemi	IXYS	—
Product Status	Obsolete	Active	Active	—
Vdss	100	100	100	V
Id @ 25°C (Tc)	40	33.5	52	A
Rds On (Max) @ 10V	60 @ 24A	60 @ 16.75A	50 @ 52A	mOhm
Vgs(th) @ 250µA	4	4	4.5	V
Gate Charge (Qg) @ 10V	180	110	60	nC
Ciss @ 25V	2700	2910	2845	pF
Power Dissipation (Tc)	200	155	300	W
Operating Temperature	-55 to 175	-55 to 175	-55 to 150	°C (TJ)
Package	D2PAK (TO-263-3)	TO-263 (D2PAK)	TO-263AA (D2PAK)	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FQB34P10TM (onsemi QFET® Series): This substitute is suitable for applications where the IRF5210STRR is used at continuous drain currents up to 33.5A. The FQB34P10TM maintains identical Vdss (100V) and Rds On (60mOhm) specifications, ensuring thermal and electrical performance parity within its current rating. The lower gate charge (110nC versus 180nC) provides faster switching characteristics. This part is actively manufactured and ROHS3 compliant, offering superior supply chain availability and regulatory compliance compared to the obsolete IRF5210STRR.

IXTA52P10P (IXYS PolarP™ Series): This substitute provides higher continuous drain current capability (52A) and superior on-resistance performance (50mOhm), making it suitable for applications requiring enhanced current handling or reduced thermal dissipation. The IXTA52P10P maintains 100V Vdss rating and D2PAK packaging. The significantly lower gate charge (60nC) enables faster switching operation. This part is actively manufactured and ROHS3 compliant. The operating temperature maximum is 150°C (versus 175°C for the main part), which may be a limiting factor in high-temperature applications.

Selection Basis:

Both substitutes are actively produced, eliminating obsolescence risk
Both meet or exceed the electrical specifications of the IRF5210STRR within their respective current ratings
Both are ROHS3 compliant, supporting modern regulatory requirements
Package compatibility (D2PAK) is maintained across all three parts
Moisture sensitivity level (MSL 1) is identical

Frequently Asked Questions (FAQ)

Q: Can the FQB34P10TM directly replace the IRF5210STRR in all applications?

A: The FQB34P10TM is a direct substitute for applications operating at continuous drain currents up to 33.5A. If your circuit requires the full 40A capability of the IRF5210STRR, the FQB34P10TM may not be suitable. For applications operating below 33.5A, the FQB34P10TM provides equivalent electrical performance with improved supply chain status.

Q: What is the difference between the two substitute parts?

A: The FQB34P10TM (onsemi) is rated for 33.5A continuous drain current with 60mOhm on-resistance. The IXTA52P10P (IXYS) is rated for 52A continuous drain current with 50mOhm on-resistance. The IXTA52P10P offers higher current capacity and lower on-resistance, making it suitable for higher-power applications. Both maintain 100V Vdss and D2PAK packaging.

Q: Are the packages physically identical?

A: Yes. Both substitute parts use D2PAK (TO-263-3) surface mount packaging with 2 leads plus tab configuration, identical to the IRF5210STRR. PCB footprints and thermal management approaches remain unchanged.

Q: What is the impact of lower gate charge in the substitute parts?

A: Lower gate charge (110nC for FQB34P10TM and 60nC for IXTA52P10P, compared to 180nC for IRF5210STRR) results in faster gate charging and discharging times. This enables higher switching frequencies and reduced switching losses in gate driver circuits. No circuit modifications are required; this is a performance advantage.

Q: Are there temperature rating differences I should consider?

A: The IRF5210STRR and FQB34P10TM both support -55°C to 175°C operating range. The IXTA52P10P has a maximum junction temperature of 150°C. For applications requiring operation above 150°C, the FQB34P10TM is the preferred substitute.

Q: Do the substitute parts have the same RoHS compliance status?

A: No. The IRF5210STRR is RoHS non-compliant. Both FQB34P10TM and IXTA52P10P are ROHS3 compliant, meeting current environmental and regulatory requirements for new designs and procurement.

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