IRF5210SPBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF5210SPBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 38A continuous drain current in D2PAK surface mount packaging. This device is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement requirements. The part belongs to the HEXFET® series and complies with ROHS3 standards with unlimited moisture sensitivity level rating.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	38	A (Tc)
On-Resistance (Rds On) @ Id, Vgs	60 mOhm @ 38A, 10V	mOhm
Gate Threshold Voltage (Vgs(th))	4	V @ 250µA
Gate Charge (Qg) @ Vgs	230	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	2780	pF @ 25V
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263-3, D2PAK	Surface Mount
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRF5210SPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 38A or greater
On-Resistance (Rds On): 60 mOhm or lower at rated current and 10V gate drive
Package Type: TO-263-3 / D2PAK surface mount configuration
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): 4V nominal
Maximum Gate Voltage (Vgs): ±20V or greater
Operating Temperature Range: -55°C minimum to 150°C or higher
RoHS3 Compliance and MSL Level 1 rating

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria) and Functional Alternatives (meeting voltage and current requirements with acceptable parameter variations).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Vgs(th) (V)	Package	Status
IRF5210SPBF	Infineon	100	38 (Tc)	60 @ 38A, 10V	230 @ 10V	4 @ 250µA	D2PAK	Discontinued
FQB34P10TM	onsemi	100	33.5 (Tc)	60 @ 16.75A, 10V	110 @ 10V	4 @ 250µA	D2PAK	Active
IXTA52P10P	IXYS	100	52 (Tc)	50 @ 52A, 10V	60 @ 10V	4.5 @ 250µA	D2PAK	Active
FQB47P06TM-AM002	onsemi	60	47 (Tc)	26 @ 23.5A, 10V	110 @ 10V	4 @ 250µA	D2PAK	Active
NTB25P06T4G	onsemi	60	27.5 (Ta)	82 @ 25A, 10V	50 @ 10V	4 @ 250µA	D2PAK	Active
IXTA24P085T	IXYS	85	24 (Tc)	65 @ 12A, 10V	41 @ 10V	4.5 @ 250µA	D2PAK	Active
IRF9510STRLPBF	Vishay Siliconix	100	4 (Tc)	1.2 @ 2.4A, 10V	8.7 @ 10V	4 @ 250µA	D2PAK	Active
IRF9Z14STRLPBF	Vishay Siliconix	60	6.7 (Tc)	500 @ 4A, 10V	12 @ 10V	4 @ 250µA	D2PAK	Active
IXTA44P15T	IXYS	150	44 (Tc)	65 @ 22A, 10V	175 @ 10V	4 @ 250µA	D2PAK	Active

Engineering Selection Recommendations

Direct Equivalent (100V, 38A+ Rating):

The FQB34P10TM from onsemi provides the closest functional match to the IRF5210SPBF. While the continuous drain current is rated at 33.5A compared to 38A, the device maintains identical 100V Vdss rating, 60 mOhm on-resistance specification, and D2PAK packaging. The FQB34P10TM is active in production with ROHS3 compliance and unlimited MSL rating. This part is suitable for applications where the 38A specification is not a hard requirement or where thermal management allows operation within the 33.5A continuous rating.

The IXTA52P10P from IXYS offers superior current handling at 52A continuous drain current with 100V Vdss and improved on-resistance of 50 mOhm. This device provides design margin for high-current applications and is actively manufactured with full ROHS3 compliance.

Voltage-Reduced Alternatives (60V Rating):

For applications operating at 60V or lower, the FQB47P06TM-AM002 and NTB25P06T4G provide active alternatives. The FQB47P06TM-AM002 delivers 47A continuous current with superior 26 mOhm on-resistance, suitable for low-voltage, high-current switching. The NTB25P06T4G provides 27.5A at 60V with moderate on-resistance characteristics.

Lower Current Alternatives:

The IRF9510STRLPBF and IRF9Z14STRLPBF are not suitable direct replacements due to significantly reduced current ratings (4A and 6.7A respectively) and are listed only for reference in applications requiring lower current handling.

Higher Voltage Alternative:

The IXTA44P15T operates at 150V Vdss with 44A continuous current, providing voltage margin for applications exceeding 100V requirements while maintaining comparable current capacity.

All recommended active alternatives comply with ROHS3 standards and carry unlimited MSL ratings, ensuring compatibility with standard manufacturing and storage protocols.

Frequently Asked Questions (FAQ)

Q: Can FQB34P10TM directly replace IRF5210SPBF in all applications?

A: The FQB34P10TM is functionally equivalent for most applications. The primary difference is the continuous drain current rating of 33.5A versus 38A. Substitution is valid when the application current requirement does not exceed 33.5A or when thermal design accommodates the lower rating. Both devices share identical 100V Vdss, 60 mOhm on-resistance, and D2PAK packaging.

Q: What is the significance of the on-resistance (Rds On) parameter in substitution?

A: On-resistance directly determines power dissipation and thermal performance. The IRF5210SPBF specifies 60 mOhm at 38A and 10V gate drive. Substitute parts with equal or lower on-resistance maintain or improve thermal characteristics. Higher on-resistance values increase power loss and require enhanced thermal management.

Q: Are 60V-rated parts suitable replacements for 100V applications?

A: No. The drain-to-source voltage rating must equal or exceed the maximum voltage in the application circuit. Using a 60V-rated device in a 100V circuit risks device failure. The 60V alternatives (FQB47P06TM-AM002, NTB25P06T4G) are suitable only for circuits operating at 60V maximum.

Q: Why is the IXTA52P10P recommended despite higher current rating?

A: The IXTA52P10P provides design margin and improved on-resistance (50 mOhm versus 60 mOhm), resulting in lower power dissipation and better thermal performance. The higher current rating does not create compatibility issues; it simply indicates greater capability. This device is preferred for applications requiring maximum reliability and thermal efficiency.

Q: What packaging considerations apply to these substitutes?

A: All listed alternatives use TO-263-3 / D2PAK surface mount packaging, ensuring mechanical and thermal interface compatibility with the original IRF5210SPBF. PCB layout and thermal pad design remain unchanged during substitution.

Q: Are there compliance differences between substitute parts?

A: All recommended active alternatives comply with ROHS3 standards and carry MSL Level 1 (unlimited) moisture sensitivity ratings, matching the original part's compliance profile. REACH status is unaffected for all listed devices.

Q: How does gate charge (Qg) affect substitution suitability?

A: Gate charge influences gate drive circuit design and switching speed. The IRF5210SPBF specifies 230 nC at 10V. Substitute parts with lower gate charge (such as IXTA52P10P at 60 nC) require less gate drive energy and enable faster switching. Higher gate charge values require proportionally stronger gate drive circuits but do not prevent substitution if the drive circuit is capable.

Q: Can parts with different maximum gate voltage (Vgs) ratings be substituted?

A: Yes, provided the application gate drive voltage does not exceed the substitute part's Vgs(max) rating. The IRF5210SPBF allows ±20V maximum gate voltage. Substitutes with ±25V or higher ratings provide additional margin. Parts with ±15V or ±20V ratings are acceptable if the application gate drive does not exceed these limits.

Q: What is the impact of operating temperature range differences?

A: The IRF5210SPBF operates from -55°C to 150°C. Most active substitutes extend to 175°C, providing additional thermal margin. This difference does not prevent substitution; it indicates improved high-temperature capability in the alternative devices.

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