IRF520NL N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF520NL is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 9.7A continuous drain current. This device is part of the HEXFET® series and is housed in a TO-262 through-hole package. The IRF520NL is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating the through-hole mounting requirement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	9.7	A
On-State Resistance (Rds On Max) @ 5.7A, 10V	200	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	25	nC
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ 25V	330	pF
Power Dissipation (Max) @ Ta	3.8	W
Power Dissipation (Max) @ Tc	48	W
Operating Temperature Range (TJ)	-55 to 175	°C
Mounting Type	Through Hole	-
Package	TO-262-3	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitute parts for the IRF520NL must satisfy the following criteria based on provided electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (required match)
Technology: MOSFET (Metal Oxide) (required match)
Mounting Type: Through Hole (required match)
Drain-to-Source Voltage (Vdss): Equal to or greater than 100V
Continuous Drain Current (Id): Equal to or greater than 9.7A
Gate Voltage Rating (Vgs Max): Equal to or greater than ±20V
Operating Temperature Range: Must encompass or exceed -55°C to 175°C

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equivalent values preferred
Power Dissipation capability: Sufficient for application requirements
RoHS and REACH compliance status for regulatory alignment

The substitute part RCX120N25 (Rohm Semiconductor) meets the core substitution criteria with enhanced electrical ratings and active product status, though package configuration differs from the original TO-262.

Parameter Comparison

Parameter	IRF520NL (Infineon)	RCX120N25 (Rohm)	Unit
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain-to-Source Voltage (Vdss)	100	250	V
Continuous Drain Current (Id) @ 25°C	9.7	12	A
Drive Voltage (Max Rds On)	10	10	V
Maximum Gate Voltage (Vgs Max)	±20	±30	V
Power Dissipation (Max) @ Ta	3.8	2.23	W
Power Dissipation (Max) @ Tc	48	40	W
Operating Temperature Range (TJ)	-55 to 175	Up to 150	°C
Mounting Type	Through Hole	Through Hole	-
Package	TO-262-3	TO-220FM-3	-
Product Status	Obsolete	Active	-
RoHS Status	Non-compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

RCX120N25 as Primary Substitute:

The RCX120N25 qualifies as a functional substitute based on the following engineering parameters:

Electrical Compatibility: The RCX120N25 exceeds the IRF520NL specifications in drain-to-source voltage (250V vs. 100V) and continuous drain current (12A vs. 9.7A), providing operational margin in both parameters. The gate voltage rating of ±30V exceeds the ±20V requirement.
Mounting Configuration: Both devices utilize through-hole mounting, maintaining PCB layout compatibility. However, the package differs: IRF520NL uses TO-262-3, while RCX120N25 uses TO-220FM-3. Physical lead spacing and mounting hole patterns must be verified for direct board-level substitution.
Product Status and Compliance: The RCX120N25 is classified as active, ensuring ongoing availability and supply chain stability. The device is ROHS3 compliant, meeting current regulatory requirements, whereas the IRF520NL is non-compliant. This compliance difference may be critical for new designs or production environments with regulatory mandates.
Operating Temperature: The RCX120N25 maximum junction temperature of 150°C is lower than the IRF520NL specification of 175°C. Applications requiring operation above 150°C require thermal analysis to confirm suitability.
On-State Resistance: Specific Rds On values for the RCX120N25 are not provided in the available data. Detailed datasheets must be consulted to confirm on-state resistance characteristics relative to the IRF520NL 200mOhm specification.

Substitution Feasibility: The RCX120N25 is electrically suitable for applications within the IRF520NL's original design envelope. PCB layout modifications may be required due to package differences. Thermal and compliance requirements must be evaluated within the specific application context.

Frequently Asked Questions (FAQ)

Q1: Can the RCX120N25 directly replace the IRF520NL on existing PCBs?

A: Electrical substitution is feasible based on provided parameters. However, direct PCB replacement requires physical compatibility verification. The IRF520NL uses TO-262-3 packaging, while the RCX120N25 uses TO-220FM-3 packaging. Lead spacing, mounting hole positions, and thermal pad configurations differ between these packages. PCB layout modification or adapter solutions may be necessary.

Q2: What are the key electrical differences between these devices?

A: The RCX120N25 provides higher voltage rating (250V vs. 100V) and higher current capability (12A vs. 9.7A). Both devices operate at 10V drive voltage. The RCX120N25 supports higher gate voltage (±30V vs. ±20V). The IRF520NL supports higher junction temperature operation (175°C vs. 150°C). On-state resistance comparison requires detailed datasheets.

Q3: Why is the IRF520NL classified as obsolete?

A: The IRF520NL is marked as obsolete by Infineon Technologies. This classification indicates the manufacturer has discontinued production and support. Substitute parts must be identified to maintain design continuity and ensure component availability for production and field service applications.

Q4: Does the RoHS compliance difference affect substitution?

A: The IRF520NL is RoHS non-compliant, while the RCX120N25 is ROHS3 compliant. For applications subject to RoHS regulations or customer requirements mandating RoHS compliance, the RCX120N25 is the appropriate choice. For legacy systems without compliance mandates, both devices may be acceptable based on electrical parameters alone.

Q5: What thermal considerations apply to substitution?

A: The IRF520NL supports junction temperatures to 175°C, while the RCX120N25 is rated to 150°C. Applications operating near the upper temperature limit require thermal analysis to confirm the RCX120N25 remains within safe operating margins. Power dissipation at ambient temperature (Ta) differs: IRF520NL 3.8W vs. RCX120N25 2.23W, affecting thermal design calculations.

Q6: Are gate charge and input capacitance specifications available for the RCX120N25?

A: Gate charge (Qg) and input capacitance (Ciss) values for the RCX120N25 are not provided in the available parameter set. These specifications affect switching speed and gate drive circuit design. Detailed datasheets from Rohm Semiconductor must be consulted for complete switching characteristic comparison.

Q7: What inventory status should influence substitution decisions?

A: The IRF520NL has 15,226 pieces in stock (new original), while the RCX120N25 has 3,900 pieces available. For immediate production requirements, the IRF520NL may offer supply advantage despite obsolete status. For long-term production planning, the RCX120N25 active status ensures sustained availability.

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