IRF520N N-Channel 100V 9.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF520N is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-source voltage and 9.7A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. The IRF520N operates across a temperature range of -55°C to 175°C and features a maximum on-resistance of 200mOhm at specified conditions. Substitute parts must maintain electrical compatibility within the 100V voltage class while accommodating application-specific current and thermal requirements.

Key Parameters

Parameter	Value	Unit	Condition
Drain-Source Voltage (Vdss)	100	V	Maximum rating
Continuous Drain Current (Id)	9.7	A	@ 25°C (Tc)
On-Resistance (Rds On)	200	mOhm	@ 5.7A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	4	V	@ 250µA
Gate Charge (Qg)	25	nC	@ 10V Vgs
Power Dissipation	48	W	@ Tc
Operating Temperature Range	-55 to 175	°C	Junction temperature (TJ)
Package Type	TO-220-3	—	Through-hole
Gate Voltage (Vgs)	±20	V	Maximum
Input Capacitance (Ciss)	330	pF	@ 25V Vds

Substitute Part Grouping Explanation

Substitute parts for the IRF520N are grouped based on strict electrical and mechanical compatibility criteria. All substitute candidates must meet the following requirements:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): 100V minimum (allows higher voltage ratings)
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET
Gate Voltage (Vgs): ±20V or greater
Operating Temperature Range: -55°C to 175°C minimum

Secondary Compatibility Parameters:

Continuous Drain Current (Id): 9.7A or greater
On-Resistance (Rds On): 200mOhm or lower (lower values indicate better performance)
Gate Threshold Voltage (Vgs(th)): 4V or lower
Power Dissipation: 48W or greater

Substitutes are classified into two categories:

Category A - Direct Electrical Equivalents (100V, 9.7A-12A range): Parts with matching voltage rating and comparable current ratings within ±30% of the original specification. These parts are pin-compatible and require no circuit modifications.

Category B - Higher Current Capability (100V, 18A and above): Parts with the same voltage rating but significantly higher current ratings. These provide enhanced thermal performance and lower on-resistance, suitable for applications requiring improved efficiency or thermal headroom.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Status	Package
IRF520N	Infineon	100	9.7	200	4	25	48	Obsolete	TO-220AB
IRF520NPBF	Infineon	100	9.7	200	4	25	48	Active	TO-220AB
IRF520PBF	Vishay Siliconix	100	9.2	270	4	16	60	Active	TO-220AB
RCX120N25	Rohm Semiconductor	250	12	—	—	—	40 (Ta)	Active	TO-220FM
PHP18NQ10T,127	Nexperia USA Inc.	100	18	90	4	21	79	Obsolete	TO-220AB
PSMN009-100P,127	NXP Semiconductors	100	75	8.8	4	156	230	Active	TO-220AB
PSMN013-100PS,127	Nexperia USA Inc.	100	68	13.9	4	59	170	Obsolete	TO-220AB
PSMN015-100P,127	Nexperia USA Inc.	100	75	15	4	90	300	Obsolete	TO-220AB
PSMN016-100PS,127	Nexperia USA Inc.	100	57	16	4	49	148	Obsolete	TO-220AB
PSMN027-100PS,127	Nexperia USA Inc.	100	37	26.8	4	30	103	Obsolete	TO-220AB
PSMN5R6-100PS,127	Nexperia USA Inc.	100	100	5.6	4	141	306	Obsolete	TO-220AB

Engineering Selection Recommendations

First Priority - Direct Replacement (Active Status):

IRF520NPBF is the primary substitute for IRF520N. Both parts are manufactured by Infineon Technologies with identical electrical specifications (100V, 9.7A, 200mOhm Rds On). IRF520NPBF is currently in active production status with RoHS3 compliance, making it suitable for new designs and production continuity. The part is supplied in tube packaging and maintains full compatibility with existing PCB layouts and thermal management designs.

Second Priority - Alternative Active Source:

IRF520PBF (Vishay Siliconix) provides an alternative from an established manufacturer. While it shares the 100V voltage rating and 4V gate threshold, it exhibits slightly lower continuous drain current (9.2A versus 9.7A) and higher on-resistance (270mOhm versus 200mOhm). This part is active and RoHS3 compliant. Selection of IRF520PBF is appropriate when supply chain diversification is required or when the application can tolerate the reduced current rating and increased power dissipation.

Third Priority - Higher Current Capability (Active Status):

PSMN009-100P,127 (NXP Semiconductors) is an active production part offering significantly enhanced performance. With 75A continuous drain current and 8.8mOhm on-resistance, this part provides superior thermal characteristics and efficiency. It is suitable for applications requiring thermal headroom or where lower conduction losses are critical. The higher gate charge (156nC) and input capacitance (8250pF) require verification of gate drive circuit capability.

Voltage Upgrade Option:

RCX120N25 (Rohm Semiconductor) operates at 250V drain-source voltage, providing overvoltage margin for applications subject to transient voltage spikes. With 12A continuous current and active production status, this part is suitable for designs where voltage derating is a design requirement. The TO-220FM package variant requires confirmation of PCB footprint compatibility.

Obsolete Status Considerations:

Parts marked as obsolete (PHP18NQ10T,127, PSMN013-100PS,127, PSMN015-100P,127, PSMN016-100PS,127, PSMN027-100PS,127, PSMN5R6-100PS,127) are available from current inventory but are not recommended for new designs. These parts may be used for legacy system repairs or production runs where existing stock is available. Transition to active-status alternatives is recommended for long-term product support.

RoHS and Regulatory Compliance:

IRF520N is RoHS non-compliant. All recommended active substitutes (IRF520NPBF, IRF520PBF, PSMN009-100P,127) are RoHS3 compliant. REACH status is unaffected for all listed parts. Compliance verification with end-product regulatory requirements is necessary before final part selection.

Frequently Asked Questions (FAQ)

Q1: Can IRF520NPBF be used as a direct drop-in replacement for IRF520N?

A: Yes. IRF520NPBF is electrically and mechanically identical to IRF520N. Both parts share the same Vdss (100V), Id (9.7A), Rds On (200mOhm), gate threshold (4V), and TO-220AB package. The primary difference is product status: IRF520NPBF is active production while IRF520N is obsolete. No circuit modifications are required.

Q2: What is the difference between IRF520NPBF and IRF520PBF?

A: Both parts operate at 100V with 4V gate threshold and TO-220AB packaging. IRF520NPBF (Infineon) maintains the original 9.7A rating and 200mOhm on-resistance. IRF520PBF (Vishay) has slightly lower specifications: 9.2A continuous current and 270mOhm on-resistance. IRF520PBF offers higher power dissipation capability (60W versus 48W). Selection depends on current requirement and thermal design constraints.

Q3: Why would I select PSMN009-100P,127 over IRF520NPBF?

A: PSMN009-100P,127 provides enhanced performance for applications requiring higher current capacity or improved efficiency. With 75A continuous current and 8.8mOhm on-resistance, conduction losses are significantly reduced compared to IRF520NPBF (9.7A, 200mOhm). This part is suitable for high-current switching applications or designs where thermal management is critical. Gate drive circuit capability must be verified due to higher gate charge (156nC).

Q4: Is RCX120N25 compatible with IRF520N in existing designs?

A: RCX120N25 is electrically compatible but not a direct replacement. It operates at 250V (versus 100V), providing overvoltage protection. The TO-220FM package differs from the standard TO-220AB, requiring PCB footprint verification. RCX120N25 is suitable for designs where higher voltage rating is beneficial or where transient overvoltage protection is required. Circuit redesign may be necessary.

Q5: What does "obsolete" status mean for substitute parts?

A: Obsolete status indicates the manufacturer has discontinued active production. Parts marked obsolete are available from existing inventory but are not recommended for new designs. Long-term supply cannot be guaranteed. For legacy system repairs or limited production runs, obsolete parts may be acceptable if inventory is confirmed available. For new product development, active-status alternatives (IRF520NPBF, IRF520PBF, PSMN009-100P,127) are required.

Q6: Are all substitute parts RoHS compliant?

A: No. IRF520N is RoHS non-compliant. Active-status substitutes (IRF520NPBF, IRF520PBF, PSMN009-100P,127) are RoHS3 compliant. Obsolete-status parts (PHP18NQ10T,127, PSMN013-100PS,127, PSMN015-100P,127, PSMN016-100PS,127, PSMN027-100PS,127, PSMN5R6-100PS,127) are also RoHS3 compliant. Regulatory compliance verification with end-product requirements is mandatory before final selection.

Q7: What is the significance of on-resistance (Rds On) in MOSFET selection?

A: On-resistance directly determines conduction losses and heat generation. Lower Rds On values reduce power dissipation and improve efficiency. IRF520N has 200mOhm Rds On. PSMN009-100P,127 has 8.8mOhm, resulting in significantly lower losses. For applications with high switching frequency or continuous current operation, lower Rds On is advantageous. Trade-offs include higher gate charge and input capacitance, requiring more robust gate drive circuits.

Q8: Can I use a higher-current MOSFET (such as PSMN5R6-100PS,127 with 100A) in place of IRF520N?

A: Yes, from an electrical standpoint. Higher-current MOSFETs are backward compatible with lower-current applications. PSMN5R6-100PS,127 (100A, 5.6mOhm) provides superior thermal performance and efficiency. However, this part is obsolete. The active-status alternative PSMN009-100P,127 (75A, 8.8mOhm) offers similar benefits with current production support. Gate drive circuit capability must be verified due to significantly higher gate charge (141nC).

Q9: What packaging considerations apply to these substitutes?

A: All recommended substitutes use TO-220-3 through-hole packaging, except RCX120N25 which uses TO-220FM (full pack variant). TO-220AB and TO-220FM are mechanically similar but have minor dimensional differences. PCB footprint compatibility should be verified before selection. All parts are suitable for standard through-hole assembly and thermal management with heatsinks.

Q10: How do I verify gate drive circuit compatibility with substitute parts?

A: Gate charge (Qg) and input capacitance (Ciss) determine gate drive requirements. IRF520N has 25nC gate charge and 330pF input capacitance. Higher-current parts (PSMN009-100P,127: 156nC, 8250pF) require more robust gate drive circuits with higher current capability. Verify that existing gate drive circuitry can supply sufficient current to charge the gate within the required switching time. Consult gate driver datasheets for maximum capacitive load specifications.

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