IRF520 MOSFET N-Channel 100V 10A Equivalent & Substitute Parts

Part Overview

The IRF520 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with 10A continuous drain current at 25°C. Manufactured by STMicroelectronics as part of the STripFET™ II series, this device is packaged in a TO-220-3 through-hole configuration and rated for 60W power dissipation.

The IRF520 has reached obsolete product status. Locating equivalent substitute parts with compatible electrical and mechanical specifications is necessary to maintain design continuity and ensure component availability for new production builds and field replacements.

Substiute Parts

IRF520

STMicroelectronicsIn Stock: 2942IRF520 Datasheet

Current PartRFQ

IRF520NPBF

Infineon TechnologiesIn Stock: 15537IRF520NPBF Datasheet

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IRF520PBF

Vishay SiliconixIn Stock: 25357IRF520PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF520 MOSFET is determined by strict equivalence across the following critical parameters:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss): Must equal 100V
• FET Type: Must be N-Channel
• Technology: Must be Metal Oxide MOSFET
• Gate Threshold Voltage Vgs(th): Must equal 4V @ 250µA
• Maximum Gate Voltage Vgs: Must equal ±20V
• Operating Temperature Range: Must span -55°C to 175°C (TJ)

Mechanical Compatibility Requirements:

• Mounting Type: Must be Through Hole
• Package / Case: Must be TO-220-3

Performance Tolerance Parameters:

• Continuous Drain Current (Id) @ 25°C: Substitute parts must maintain minimum 9.2A (within 92% of original 10A specification)
• Rds On (Max) @ 10V: Substitute parts must not exceed 270mOhm
• Power Dissipation (Max): Substitute parts must support minimum 48W (within 80% of original 60W specification)

The substitute parts IRF520NPBF (Infineon Technologies) and IRF520PBF (Vishay Siliconix) meet all electrical and mechanical compatibility criteria and are classified as direct functional equivalents.

Parameter Comparison

Engineering Selection Recommendations

IRF520NPBF (Infineon Technologies HEXFET®)

The IRF520NPBF is an active product with ROHS3 compliance. This substitute demonstrates improved on-resistance performance (200mOhm maximum versus 270mOhm) at comparable gate drive voltage. The reduced input capacitance (330pF versus 460pF) provides faster switching characteristics. Power dissipation is rated at 48W, which represents 80% of the original IRF520 specification. This part is suitable for applications where thermal management is adequate and switching speed improvement is beneficial.

IRF520PBF (Vishay Siliconix)

The IRF520PBF is an active product with ROHS3 compliance. This substitute maintains identical power dissipation rating (60W) and on-resistance specification (270mOhm) as the original IRF520. Gate charge is reduced to 16nC, providing improved switching performance. Input capacitance is 360pF, intermediate between the original and the Infineon alternative. This part provides the closest electrical match to the original IRF520 specification.

Both substitute parts are classified as direct functional equivalents based on electrical and mechanical parameter compatibility. Selection between IRF520NPBF and IRF520PBF depends on application-specific requirements for switching speed, thermal dissipation, and compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can the IRF520NPBF be used as a direct replacement for the IRF520?

A: Yes. The IRF520NPBF meets all critical electrical parameters: 100V Vdss, N-Channel configuration, 4V gate threshold, ±20V maximum gate voltage, and -55°C to 175°C operating range. Mechanical compatibility is confirmed through identical TO-220-3 through-hole packaging. The 9.7A continuous drain current specification exceeds the 9.2A minimum threshold for substitution. ROHS3 compliance status differs from the original obsolete part, which may be advantageous for new production applications.

Q: Can the IRF520PBF be used as a direct replacement for the IRF520?

A: Yes. The IRF520PBF meets all critical electrical parameters: 100V Vdss, N-Channel configuration, 4V gate threshold, ±20V maximum gate voltage, and -55°C to 175°C operating range. Mechanical compatibility is confirmed through identical TO-220-3 through-hole packaging. The 9.2A continuous drain current specification meets the minimum substitution threshold. Power dissipation rating (60W) matches the original specification exactly. ROHS3 compliance status differs from the original obsolete part.

Q: What is the difference in on-resistance between the substitute parts?

A: The IRF520NPBF specifies 200mOhm maximum on-resistance at 5.7A and 10V gate drive, representing a 26% improvement over the original 270mOhm specification. The IRF520PBF maintains the original 270mOhm on-resistance specification at 5.5A and 10V gate drive. Lower on-resistance reduces power dissipation in switching applications and improves thermal performance.

Q: Are there packaging differences between the IRF520 and its substitutes?

A: All three parts use identical TO-220-3 through-hole packaging. The IRF520 and IRF520PBF are supplied in tube packaging. The IRF520NPBF is supplied in tube packaging. No PCB layout or mechanical mounting modifications are required for substitution.

Q: What is the significance of the gate charge differences?

A: Gate charge (Qg) determines the energy required to switch the transistor on and off. The IRF520 specifies 22nC at 10V gate drive. The IRF520NPBF specifies 25nC, requiring slightly more gate charge. The IRF520PBF specifies 16nC, requiring less gate charge for switching. Lower gate charge enables faster switching transitions and reduces driver power consumption. The differences are within acceptable ranges for most applications.

Q: What is the significance of input capacitance differences?

A: Input capacitance (Ciss) affects switching speed and gate drive requirements. The IRF520 specifies 460pF at 25V. The IRF520NPBF specifies 330pF, representing a 28% reduction that improves switching speed. The IRF520PBF specifies 360pF, representing a 22% reduction. Lower input capacitance reduces the time constant in gate drive circuits and enables faster switching transitions.

Q: Are there compliance or regulatory differences between the parts?

A: The original IRF520 is RoHS non-compliant and has obsolete product status. The IRF520NPBF is ROHS3 compliant with active product status. The IRF520PBF is ROHS3 compliant with active product status and REACH Affected designation. All three parts are classified as EAR99 for export control purposes. New production applications should prioritize ROHS3 compliant alternatives.

Q: What is the minimum continuous drain current required for substitution?

A: The original IRF520 specifies 10A continuous drain current at 25°C. Substitute parts must maintain minimum 9.2A (92% of original specification) to be classified as functional equivalents. The IRF520NPBF provides 9.7A and the IRF520PBF provides 9.2A, both meeting this threshold. Applications requiring the full 10A specification should evaluate thermal management and duty cycle requirements.

Q: What is the minimum power dissipation rating required for substitution?

A: The original IRF520 specifies 60W power dissipation. Substitute parts must support minimum 48W (80% of original specification) to be classified as functional equivalents. The IRF520NPBF provides 48W and the IRF520PBF provides 60W. Applications operating at maximum power levels should prioritize the IRF520PBF or implement enhanced thermal management for the IRF520NPBF.