IRF510S MOSFET N-Channel 100V 5.6A Equivalent & Substitute Parts

Part Overview

The IRF510S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 5.6A continuous drain current. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for general-purpose switching applications requiring moderate power dissipation capability.

The IRF510S carries an obsolete product status. Locating equivalent substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and access components with current manufacturing support and compliance certifications.

Substiute Parts

IRF510S

Vishay SiliconixIn Stock: 15503IRF510S Datasheet

Current PartRFQ

IRF510SPBF

Vishay SiliconixIn Stock: 15215IRF510SPBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF510S are identified based on electrical and mechanical parameter equivalence within the N-Channel MOSFET category. The substitution criteria are:

Electrical Parameters (Must Match):

• Drain to Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 5.6A (Tc)
• On-State Resistance (Rds On): 540mOhm @ 3.4A, 10V
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
• Gate Charge (Qg): 8.3nC @ 10V
• Input Capacitance (Ciss): 180pF @ 25V
• Power Dissipation: 3.7W (Ta), 43W (Tc)
• Operating Temperature Range: -55°C to 175°C (TJ)

Mechanical Parameters (Must Match):

• Mounting Type: Surface Mount
• Package: TO-263 (D2PAK)

Functional Category:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)

Parts meeting all electrical and mechanical criteria are classified as direct substitutes. Packaging format differences (tube versus alternative packaging) do not affect electrical substitutability.

Parameter Comparison

Engineering Selection Recommendations

The IRF510SPBF is a direct electrical and mechanical equivalent to the IRF510S. Both devices share identical electrical specifications across all critical parameters: voltage rating, current capacity, on-state resistance, gate characteristics, and thermal performance.

Product Status Consideration: The IRF510S is classified as obsolete, while the IRF510SPBF maintains active product status. Active status indicates current manufacturing support, ongoing quality assurance, and availability through authorized distribution channels.

Compliance Consideration: The IRF510SPBF is ROHS3 compliant and REACH affected, indicating compliance with current environmental and regulatory standards. The IRF510S is RoHS non-compliant and REACH unaffected, reflecting its obsolete classification. For applications subject to RoHS or REACH requirements, the IRF510SPBF is the appropriate selection.

Packaging Consideration: The IRF510SPBF is supplied in tube packaging, whereas the IRF510S packaging format is not specified. Both devices use the identical TO-263 (D2PAK) component package, ensuring mechanical and thermal compatibility in circuit board layouts.

Frequently Asked Questions (FAQ)

Q: Can the IRF510SPBF replace the IRF510S in existing designs?

A: Yes. The IRF510SPBF is electrically and mechanically equivalent to the IRF510S. All electrical parameters—voltage rating, current capacity, on-state resistance, gate charge, and thermal characteristics—are identical. The TO-263 (D2PAK) package dimensions and pinout are the same, permitting direct substitution without circuit board layout modification.

Q: What is the primary difference between the IRF510S and IRF510SPBF?

A: The primary differences are product status and regulatory compliance. The IRF510SPBF is an active product with ROHS3 compliance and REACH applicability, while the IRF510S is obsolete and RoHS non-compliant. Electrically and mechanically, the devices are identical.

Q: Why is the IRF510S listed as obsolete?

A: Obsolete status indicates that the manufacturer has discontinued production and support for this part number. The IRF510SPBF represents the current equivalent offering from Vishay Siliconix with identical electrical performance and active manufacturing support.

Q: Are there any thermal or electrical performance differences between these parts?

A: No. Both devices have identical power dissipation ratings (3.7W at Ta, 43W at Tc), operating temperature range (-55°C to 175°C), and all electrical specifications. Thermal performance in circuit applications is equivalent.

Q: Does the tube packaging of the IRF510SPBF affect compatibility?

A: No. Packaging format (tube, tape and reel, or bulk) affects only handling, storage, and assembly processes. The component itself—the TO-263 (D2PAK) package—is identical. Electrical and mechanical compatibility is unaffected by packaging format.

Q: Can I use the IRF510SPBF in applications requiring RoHS compliance?

A: Yes. The IRF510SPBF is ROHS3 compliant, making it suitable for applications subject to RoHS directives. The obsolete IRF510S is not RoHS compliant and should not be used in RoHS-regulated applications.

Q: What is the gate charge specification, and why is it important?

A: Gate charge (Qg) is 8.3nC at 10V for both devices. This parameter determines the amount of charge required to switch the MOSFET on or off and affects gate drive circuit design and switching speed. Identical gate charge ensures equivalent performance in gate drive circuits.

Q: Are the on-state resistance characteristics identical?

A: Yes. Both devices have an on-state resistance (Rds On) of 540mOhm maximum at 3.4A drain current and 10V gate-source voltage. This parameter directly affects power dissipation and heat generation during conduction, and identical values ensure equivalent thermal behavior.