IRF510 N-Channel MOSFET 100V 5.6A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF510 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with 5.6A continuous drain current at 25°C. The device is housed in a Through Hole TO-220AB package and dissipates a maximum of 43W at the case temperature. The IRF510 is classified as obsolete product status, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate drive characteristics, and thermal performance while accommodating modern RoHS compliance requirements.

Substiute Parts

IRF510
Vishay SiliconixIn Stock: 15342IRF510 Datasheet
IRF510
Current Part
IRF510PBF
Vishay SiliconixIn Stock: 41307IRF510PBF Datasheet
IRF510PBF
Direct
FDP3682
onsemiIn Stock: 15501FDP3682 Datasheet
FDP3682
MFR Recommended
PHP18NQ10T,127
Nexperia USA Inc.In Stock: 6124PHP18NQ10T,127 Datasheet
PHP18NQ10T,127
MFR Recommended
PSMN009-100P,127
NXP SemiconductorsIn Stock: 2877PSMN009-100P,127 Datasheet
PSMN009-100P,127
MFR Recommended
PSMN013-100PS,127
Nexperia USA Inc.In Stock: 4294PSMN013-100PS,127 Datasheet
PSMN013-100PS,127
MFR Recommended
PSMN015-100P,127
Nexperia USA Inc.In Stock: 2240PSMN015-100P,127 Datasheet
PSMN015-100P,127
MFR Recommended
PSMN016-100PS,127
Nexperia USA Inc.In Stock: 5942PSMN016-100PS,127 Datasheet
PSMN016-100PS,127
MFR Recommended
PSMN027-100PS,127
Nexperia USA Inc.In Stock: 23088PSMN027-100PS,127 Datasheet
PSMN027-100PS,127
MFR Recommended
PSMN5R6-100PS,127
Nexperia USA Inc.In Stock: 12949PSMN5R6-100PS,127 Datasheet
PSMN5R6-100PS,127
MFR Recommended
PSMN7R0-100PS,127
Nexperia USA Inc.In Stock: 5288PSMN7R0-100PS,127 Datasheet
PSMN7R0-100PS,127
MFR Recommended
PSMN9R5-100PS,127
NXP SemiconductorsIn Stock: 43734PSMN9R5-100PS,127 Datasheet
PSMN9R5-100PS,127
MFR Recommended

Key Parameters

Parameter IRF510 Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 5.6 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 540 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25V
Power Dissipation (Max) 43 W (Tc)
Operating Temperature -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitute parts for the IRF510 are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Mandatory Compatibility Parameters:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V (minimum)
  • Gate-Source Voltage (Vgs): ±20V (minimum)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 or TO-220AB

Performance Parameters for Substitution:

  • Continuous Drain Current (Id) @ 25°C: Equal to or greater than 5.6A
  • Rds On (Max) @ 10V: Equal to or less than 540mOhm (lower values indicate improved performance)
  • Vgs(th) (Max): 4V or less (ensures gate drive compatibility)
  • Operating Temperature Range: -55°C to 175°C (minimum)

Substitute parts are grouped into two categories: direct equivalents (identical electrical specifications with improved product status) and functional substitutes (enhanced performance characteristics while maintaining voltage and package compatibility).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max @ 10V (mOhm) Vgs(th) Max (V) Qg Max @ 10V (nC) Ciss Max @ 25V (pF) Power Diss Max (W) Package Product Status RoHS Status
IRF510 Vishay Siliconix 100 5.6 540 4 8.3 180 43 TO-220-3 Obsolete Non-compliant
IRF510PBF Vishay Siliconix 100 5.6 540 4 8.3 180 43 TO-220-3 Active ROHS3 Compliant
FDP3682 onsemi 100 6 36 4 28 1250 95 TO-220-3 Active ROHS3 Compliant
PHP18NQ10T,127 Nexperia USA Inc. 100 18 90 4 21 633 79 TO-220-3 Obsolete ROHS3 Compliant
PSMN009-100P,127 NXP Semiconductors 100 75 8.8 4 156 8250 230 TO-220-3 Active Not Specified
PSMN013-100PS,127 Nexperia USA Inc. 100 68 13.9 4 59 3195 170 TO-220-3 Obsolete ROHS3 Compliant
PSMN015-100P,127 Nexperia USA Inc. 100 75 15 4 90 4900 300 TO-220-3 Obsolete ROHS3 Compliant
PSMN016-100PS,127 Nexperia USA Inc. 100 57 16 4 49 2404 148 TO-220-3 Obsolete ROHS3 Compliant
PSMN027-100PS,127 Nexperia USA Inc. 100 37 26.8 4 30 1624 103 TO-220-3 Obsolete ROHS3 Compliant
PSMN5R6-100PS,127 Nexperia USA Inc. 100 100 5.6 4 141 8061 306 TO-220-3 Obsolete ROHS3 Compliant
PSMN7R0-100PS,127 Nexperia USA Inc. 100 100 12 4 125 6686 269 TO-220-3 Obsolete ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Recommended for Immediate Replacement):

IRF510PBF is the direct equivalent of IRF510. This part maintains identical electrical specifications (100V Vdss, 5.6A Id, 540mOhm Rds On, 43W power dissipation) while offering Active product status and ROHS3 compliance. The IRF510PBF is supplied in Tube packaging and is suitable for direct substitution in existing designs without circuit modification.

Active Product Alternative (Recommended for New Designs):

FDP3682 (onsemi) is an Active product offering improved electrical performance. This device maintains 100V Vdss and exceeds the minimum 5.6A current requirement with 6A rating. The FDP3682 provides significantly lower Rds On (36mOhm versus 540mOhm), resulting in reduced power dissipation and improved thermal efficiency. Higher power dissipation capability (95W versus 43W) provides design margin. The FDP3682 is ROHS3 compliant and suitable for new production designs.

Higher Current Capacity Alternatives (For Enhanced Performance Applications):

PSMN009-100P,127, PSMN013-100PS,127, PSMN015-100P,127, PSMN016-100PS,127, PSMN027-100PS,127, PSMN5R6-100PS,127, and PSMN7R0-100PS,127 are functional substitutes offering increased current handling (37A to 100A) and improved Rds On characteristics. These parts maintain 100V Vdss and TO-220-3 package compatibility. Most are classified as Obsolete product status. PSMN009-100P,127 is Active status. These parts are suitable for applications requiring higher current capacity or lower on-resistance than the original IRF510 specification.

Product Status Consideration:

IRF510PBF and FDP3682 are the only Active status alternatives. For new designs and long-term production support, these parts are preferred. Obsolete status parts (PHP18NQ10T,127 and all PSMN variants) may have limited availability and should be evaluated for supply chain continuity.

Compliance Status:

All substitute parts listed are ROHS3 compliant or have unspecified compliance status, addressing the RoHS non-compliance of the original IRF510. IRF510PBF and FDP3682 explicitly state ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can IRF510PBF be used as a direct replacement for IRF510?

A: Yes. IRF510PBF is electrically and mechanically identical to IRF510, with identical Vdss (100V), Id (5.6A), Rds On (540mOhm), and power dissipation (43W). The primary differences are Active product status and ROHS3 compliance. No circuit modifications are required.

Q: What is the primary reason to substitute the IRF510?

A: The IRF510 is classified as Obsolete product status and is RoHS non-compliant. IRF510PBF provides an Active equivalent with ROHS3 compliance. For new designs, FDP3682 offers improved performance characteristics while maintaining voltage and package compatibility.

Q: Are all substitute parts compatible with the TO-220-3 package footprint?

A: Yes. All listed substitute parts use TO-220-3 or TO-220AB package designation, which are mechanically and electrically compatible. Pin configuration (Gate, Drain, Source) is identical across all listed parts.

Q: What is the significance of lower Rds On values in substitute parts?

A: Lower Rds On (on-resistance) reduces power dissipation during operation. For example, FDP3682 with 36mOhm Rds On dissipates significantly less heat than IRF510 with 540mOhm Rds On at equivalent current levels. This improves thermal performance and may reduce heatsink requirements.

Q: Can I use a higher current-rated part (such as PSMN009-100P,127 with 75A rating) in place of IRF510 (5.6A)?

A: Yes. Higher current-rated parts are functionally compatible substitutes. The 100V Vdss, ±20V Vgs, and TO-220-3 package remain compatible. Higher current capacity provides design margin and improved performance. Gate drive characteristics (Vgs(th) = 4V) remain compatible with existing gate drive circuits.

Q: What is the operating temperature range for substitute parts?

A: All listed substitute parts maintain the -55°C to 175°C operating temperature range of the original IRF510, ensuring thermal compatibility across the full operating envelope.

Q: Are there supply chain advantages to selecting specific substitute parts?

A: IRF510PBF and FDP3682 are classified as Active product status, indicating ongoing production and availability. PSMN009-100P,127 is also Active status. Obsolete status parts (PHP18NQ10T,127 and most PSMN variants) may have limited inventory and should be evaluated for long-term supply continuity.

Q: How do gate charge (Qg) differences affect circuit design?

A: Gate charge affects gate drive circuit design and switching speed. IRF510 has 8.3nC Qg, while higher current substitutes have higher Qg values (up to 156nC for PSMN009-100P,127). Higher Qg requires more gate charge delivery but does not prevent substitution. Existing gate drive circuits designed for IRF510 will function with higher Qg parts, though switching speed may be affected.

Q: What packaging options are available for substitute parts?

A: IRF510PBF is supplied in Tube packaging. FDP3682 is supplied in Tube packaging. PSMN009-100P,127 is supplied in Bulk packaging. Other PSMN variants are supplied in Tube packaging. All maintain Through Hole mounting type compatible with existing PCB designs.

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