IRF4905STRRPBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF4905STRRPBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 42A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is designed for applications requiring moderate power dissipation up to 170W at the case temperature. The part is currently classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRF4905STRRPBF

Infineon TechnologiesIn Stock: 2987IRF4905STRRPBF Datasheet

Current PartRFQ

IRF4905STRLPBF

Infineon TechnologiesIn Stock: 25214IRF4905STRLPBF Datasheet

MFR RecommendedRFQ

NP50P06KDG-E1-AY

Renesas Electronics CorporationIn Stock: 4417NP50P06KDG-E1-AY Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF4905STRRPBF are identified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

• FET Type: P-Channel MOSFET (Metal Oxide Semiconductor)
• Drain-to-Source Voltage (Vdss): Equal to or greater than 55V
• Continuous Drain Current (Id): Equal to or greater than 42A at 25°C
• On-Resistance (Rds On): Equal to or lower than 20mOhm at rated current and gate voltage
• Package Type: D2PAK (TO-263-3) surface mount configuration
• Mounting Type: Surface mount compatible with D2PAK footprint
• Compliance: ROHS3 compliant, REACH unaffected

Substitution Logic: Parts meeting or exceeding these parameters can function as direct replacements in applications designed for the IRF4905STRRPBF. Voltage and current ratings must not be lower than the original specification. On-resistance values equal to or lower than the original ensure equivalent or improved performance. Package compatibility ensures mechanical and thermal interface compatibility.

Parameter Comparison

Engineering Selection Recommendations

IRF4905STRLPBF (Infineon Technologies)

This part is the direct equivalent to the IRF4905STRRPBF with identical electrical specifications. The primary distinction is product status: IRF4905STRLPBF is Active, whereas the original part is Obsolete. This substitute maintains all critical parameters including 55V Vdss, 42A continuous drain current, 20mOhm on-resistance, and 170W power dissipation. The operating temperature range is -55°C to 150°C, which is 25°C lower than the original at the upper limit. Both parts are ROHS3 compliant and use identical D2PAK packaging. This part is recommended as the primary replacement for the obsolete IRF4905STRRPBF.

NP50P06KDG-E1-AY (Renesas Electronics Corporation)

This part meets substitution criteria with enhanced electrical performance in several areas. It provides 60V Vdss (5V higher than original), 50A continuous drain current (8A higher than original), and lower on-resistance of 17mOhm at 25A, 10V. Gate charge is significantly lower at 95nC compared to 180nC, resulting in faster switching characteristics. The part is ROHS3 compliant and uses TO-263 packaging compatible with D2PAK footprint. Operating temperature extends to 175°C, matching the original specification. However, power dissipation is rated at 90W (Tc), which is lower than the original 170W. This part is suitable for applications where the lower power dissipation rating is acceptable and where improved switching performance is beneficial.

Frequently Asked Questions (FAQ)

Q: Can IRF4905STRLPBF directly replace IRF4905STRRPBF without circuit modifications?

A: Yes. IRF4905STRLPBF is electrically and mechanically identical to IRF4905STRRPBF. Both parts share the same Vdss (55V), Id (42A), Rds On (20mOhm), and D2PAK package. The only difference is product status (Active vs. Obsolete). No circuit modifications are required.

Q: What is the key difference between IRF4905STRLPBF and NP50P06KDG-E1-AY?

A: Both are P-Channel MOSFETs in D2PAK packages meeting the 55V/42A minimum requirements. IRF4905STRLPBF is an Infineon part with identical specifications to the original. NP50P06KDG-E1-AY is a Renesas part with higher voltage (60V) and current (50A) ratings, lower on-resistance (17mOhm), and lower gate charge (95nC), but with reduced power dissipation rating (90W vs. 170W).

Q: Is the NP50P06KDG-E1-AY suitable for high-power applications?

A: The NP50P06KDG-E1-AY has a maximum power dissipation of 90W (Tc), which is lower than the original IRF4905STRRPBF at 170W (Tc). Applications requiring sustained power dissipation above 90W should use IRF4905STRLPBF instead.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. Both IRF4905STRLPBF and NP50P06KDG-E1-AY are ROHS3 compliant and REACH unaffected, matching the compliance status of the original IRF4905STRRPBF.

Q: Can NP50P06KDG-E1-AY be used in applications requiring the full -55°C to 175°C temperature range?

A: Yes. NP50P06KDG-E1-AY supports the full -55°C to 175°C operating temperature range, matching the original specification. IRF4905STRLPBF operates to 150°C maximum, which may be a limitation in high-temperature applications.

Q: What is the significance of lower gate charge in NP50P06KDG-E1-AY?

A: Lower gate charge (95nC vs. 180nC) results in faster switching transitions and reduced gate drive power requirements. This can improve efficiency in high-frequency switching applications but does not affect DC operating characteristics.

Q: Are the D2PAK and TO-263 packages interchangeable?

A: Yes. D2PAK and TO-263-3 refer to the same package designation. Both IRF4905STRLPBF and NP50P06KDG-E1-AY use compatible D2PAK (TO-263-3) surface mount packages with identical pin configurations and thermal characteristics.