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IRF4104 N-Channel 40V 75A MOSFET Equivalent & Substitute Parts
Part Overview
The IRF4104 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage and 75A continuous drain current in a TO-220AB through-hole package. This device is classified as Obsolete, which necessitates identification of equivalent and substitute components for new designs and ongoing production support. The IRF4104 belongs to the HEXFET® series and is suitable for switching applications requiring moderate current handling at 40V operating levels.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 75 | A (Tc) |
| On-State Resistance (Rds On) @ 75A, 10V | 5.5 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 100 | nC |
| Power Dissipation (Max) | 140 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-220AB | Through Hole |
| RoHS Status | Non-compliant | — |
Substitute Part Grouping Explanation
Substitution of the IRF4104 is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
- Continuous Drain Current (Id): Must equal or exceed 75A at 25°C
- Gate Drive Voltage: 10V nominal
- Package Type: TO-220 or TO-220AB through-hole configuration
- Operating Temperature Range: Must support -55°C to 175°C minimum
- FET Technology: N-Channel MOSFET (Metal Oxide)
Secondary Compatibility Factors:
- On-State Resistance (Rds On): Lower values indicate improved performance but are not mandatory for substitution
- Gate Charge (Qg): Lower values reduce switching losses but do not prevent substitution
- Power Dissipation Rating: Must support application thermal requirements
- RoHS Compliance: Preferred for new designs but not required for direct electrical substitution
Substitute parts are grouped into three categories based on their relationship to the IRF4104:
- Parametric Equivalents: Identical electrical specifications and package type (IRF4104PBF)
- MFR Recommended Substitutes: Manufacturer-approved alternatives with enhanced performance characteristics (IPP015N04NGXKSA1, IPP039N04LGXKSA1, CSD18504KCS, IXTP100N04T2)
- Direct Substitutes: Cross-manufacturer alternatives meeting or exceeding core electrical parameters (STP95N4F3, PSMN series, PSMN4R5-40PS,127, PSMN8R0-40PS,127)
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Pd Max (W) | Package | Status | RoHS |
|---|---|---|---|---|---|---|---|---|---|
| IRF4104 | Infineon | 40 | 75 | 5.5 @ 75A, 10V | 100 @ 10V | 140 | TO-220AB | Obsolete | Non-compliant |
| IRF4104PBF | Infineon | 40 | 75 | 5.5 @ 75A, 10V | 100 @ 10V | 140 | TO-220AB | Active | ROHS3 Compliant |
| IPP015N04NGXKSA1 | Infineon | 40 | 120 | 1.5 @ 100A, 10V | 250 @ 10V | 250 | TO-220-3 | Active | ROHS3 Compliant |
| IPP039N04LGXKSA1 | Infineon | 40 | 80 | 3.9 @ 80A, 10V | 78 @ 10V | 94 | TO-220-3 | Not For New Designs | ROHS3 Compliant |
| CSD18504KCS | Texas Instruments | 40 | 100 (Tc) | 7 @ 40A, 10V | 25 @ 10V | 115 | TO-220-3 | Active | ROHS3 Compliant |
| IXTP100N04T2 | IXYS | 40 | 100 | 7 @ 25A, 10V | 25.5 @ 10V | 150 | TO-220-3 | Active | ROHS3 Compliant |
| STP95N4F3 | STMicroelectronics | 40 | 80 | 6.2 @ 40A, 10V | 54 @ 10V | 110 | TO-220 | Active | ROHS3 Compliant |
| PSMN1R5-40PS,127 | Nexperia USA Inc. | 40 | 120 | 1.6 @ 25A, 10V | 136 @ 10V | 338 | TO-220AB | Obsolete | ROHS3 Compliant |
| PSMN2R2-40PS,127 | Nexperia USA Inc. | 40 | 100 | 2.1 @ 25A, 10V | 130 @ 10V | 306 | TO-220AB | Obsolete | ROHS3 Compliant |
| PSMN4R5-40PS,127 | Nexperia USA Inc. | 40 | 100 | 4.6 @ 25A, 10V | 42.3 @ 10V | 148 | TO-220AB | Obsolete | ROHS3 Compliant |
| PSMN8R0-40PS,127 | Nexperia USA Inc. | 40 | 77 | 7.6 @ 25A, 10V | 21 @ 10V | 86 | TO-220AB | Obsolete | ROHS3 Compliant |
Engineering Selection Recommendations
First Priority: Parametric Equivalent
IRF4104PBF is the direct parametric equivalent to IRF4104, offering identical electrical specifications (40V, 75A, 5.5mOhm Rds On, 140W power dissipation) in the same TO-220AB package. This part is currently Active and ROHS3 Compliant, making it the preferred choice for direct replacement in existing designs. Inventory availability is high (10,200 pcs), ensuring supply continuity.
Second Priority: Manufacturer-Recommended Active Substitutes
For new designs or applications where enhanced performance is acceptable, Infineon Technologies recommends IPP015N04NGXKSA1 (OptiMOS™ series, 120A, 1.5mOhm Rds On, Active status, ROHS3 Compliant). This part exceeds IRF4104 current and power dissipation ratings while maintaining 40V Vdss and TO-220-3 package compatibility. The lower on-state resistance reduces thermal dissipation in high-current applications.
Third Priority: Cross-Manufacturer Active Alternatives
IXTP100N04T2 (IXYS, TrenchT2™ series) and CSD18504KCS (Texas Instruments, NexFET™ series) are Active, ROHS3-compliant alternatives rated for 100A continuous drain current at 40V. Both devices feature lower gate charge (25-25.5 nC) compared to IRF4104 (100 nC), reducing switching losses. Package compatibility is TO-220-3.
Compliance Consideration
IRF4104 is RoHS non-compliant. All recommended substitutes (IRF4104PBF, IPP015N04NGXKSA1, CSD18504KCS, IXTP100N04T2, STP95N4F3) are ROHS3 Compliant, meeting current regulatory requirements for new production.
Obsolete Part Alternatives
PSMN series devices (PSMN1R5-40PS,127, PSMN2R2-40PS,127, PSMN4R5-40PS,127, PSMN8R0-40PS,127) are classified as Obsolete but remain in stock. These Nexperia parts meet or exceed IRF4104 electrical specifications and are ROHS3 Compliant. Selection within this series depends on specific Rds On and power dissipation requirements.
Frequently Asked Questions (FAQ)
Q1: Can IRF4104PBF be used as a direct replacement for IRF4104?
A: Yes. IRF4104PBF is a parametric equivalent with identical electrical specifications (40V, 75A, 5.5mOhm Rds On, 140W power dissipation) and the same TO-220AB package. The only difference is product status: IRF4104PBF is Active and ROHS3 Compliant, while IRF4104 is Obsolete and RoHS non-compliant. Pin configuration and thermal characteristics are identical.
Q2: What is the key difference between TO-220AB and TO-220-3 packages?
A: Both are through-hole packages with three leads (Gate, Drain, Source). TO-220AB and TO-220-3 are mechanically and electrically compatible for standard applications. The designation difference reflects manufacturer nomenclature; electrical performance and pin spacing are equivalent. Mounting and thermal interface remain identical.
Q3: Why does IPP015N04NGXKSA1 have higher gate charge (250 nC) than IRF4104 (100 nC)?
A: Gate charge correlates with input capacitance and die size. IPP015N04NGXKSA1 is rated for 120A continuous current versus IRF4104's 75A, requiring a larger die and higher input capacitance. Higher gate charge increases switching time but does not prevent substitution if the gate driver can supply the required charge within acceptable switching frequency limits.
Q4: Can I use PSMN2R2-40PS,127 (100A) instead of IRF4104 (75A)?
A: Yes, from an electrical standpoint. PSMN2R2-40PS,127 meets all core substitution criteria: 40V Vdss, 100A continuous current (exceeds 75A requirement), TO-220AB package, and -55°C to 175°C operating range. However, PSMN2R2-40PS,127 is classified as Obsolete. For new designs, prefer Active alternatives such as IPP015N04NGXKSA1 or IXTP100N04T2.
Q5: Which substitute offers the lowest on-state resistance?
A: IPP015N04NGXKSA1 features the lowest Rds On at 1.5 mOhm (measured at 100A, 10V), compared to IRF4104's 5.5 mOhm. Lower on-state resistance reduces conduction losses and heat generation, beneficial for high-current, continuous-duty applications. This part is Active and ROHS3 Compliant.
Q6: Is CSD18504KCS suitable for applications requiring -55°C to 175°C operation?
A: CSD18504KCS (Texas Instruments NexFET™) supports -55°C to 150°C operating range, which is 25°C lower than IRF4104's maximum of 175°C. For applications requiring full -55°C to 175°C operation, use IRF4104PBF, IPP015N04NGXKSA1, IXTP100N04T2, or STP95N4F3, all rated to 175°C.
Q7: What is the advantage of STP95N4F3 over IRF4104?
A: STP95N4F3 (STMicroelectronics STripFET™ III) is rated for 80A continuous current at 40V, exceeding IRF4104's 75A. It features lower gate charge (54 nC versus 100 nC), reducing switching losses. STP95N4F3 is Active and ROHS3 Compliant. The trade-off is slightly higher Rds On (6.2 mOhm at 40A versus IRF4104's 5.5 mOhm at 75A).
Q8: Are all substitute parts available in the same quantity as IRF4104?
A: No. IRF4104 has 1,913 pcs in stock. IRF4104PBF has the highest availability at 10,200 pcs. Other substitutes range from 1,153 pcs (IPP039N04LGXKSA1) to 15,226 pcs (STP95N4F3). Verify current inventory before design selection for production volume requirements.
Q9: Can I use a 60V-rated MOSFET as a substitute for the 40V IRF4104?
A: This information is not provided in the available substitute parts list. Substitution must be based strictly on the parameters and parts specified in this reference. Consult manufacturer datasheets and application requirements before considering voltage ratings outside the provided alternatives.
Q10: What does "Not For New Designs" status mean for IPP039N04LGXKSA1?
A: "Not For New Designs" indicates the manufacturer (Infineon) does not recommend this part for new product development, though it remains available for legacy system support. For new designs, select from Active-status alternatives such as IPP015N04NGXKSA1, IXTP100N04T2, or CSD18504KCS.
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