IRF40DM229 Equivalent & Substitute Parts

Part Overview

The IRF40DM229 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 159A continuous drain current at 25°C. This device features DirectFET™ Isometric MF surface mount packaging and is designed for high-current switching applications requiring low on-resistance performance.

The IRF40DM229 from Infineon Technologies carries an Obsolete product status. Locating equivalent substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Current - Continuous Drain (Id) @ 25°C	159	A (Tc)
Rds On (Max) @ Id, Vgs	1.85 mOhm @ 97A, 10V	mOhm
Vgs(th) (Max) @ Id	3.9	V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	161	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	5317	pF @ 25V
Power Dissipation (Max)	83	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	-
Package / Case	DirectFET™ Isometric MF	-
Technology	MOSFET (Metal Oxide)	-
FET Type	N-Channel	-

Substitute Part Grouping Explanation

Substitute parts for the IRF40DM229 are identified based on strict electrical and mechanical parameter matching. The following criteria determine substitution eligibility:

Electrical Parameters (Must Match):

Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.85 mOhm @ 97A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25V
Power Dissipation (Max): 83W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters (Must Match):

Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MF
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel

Substitute parts must satisfy all electrical and mechanical parameters without deviation to ensure functional and physical compatibility within the original application circuit.

Parameter Comparison

Parameter	IRF40DM229 (Infineon - Obsolete)	IRF40DM229 (International Rectifier - Active)
Manufacturer	Infineon Technologies	International Rectifier
Product Status	Obsolete	Active
Drain to Source Voltage (Vdss)	40 V	40 V
Current - Continuous Drain (Id) @ 25°C	159 A (Tc)	159 A (Tc)
Rds On (Max) @ Id, Vgs	1.85 mOhm @ 97A, 10V	1.85 mOhm @ 97A, 10V
Vgs(th) (Max) @ Id	3.9 V @ 100µA	3.9 V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	161 nC @ 10V	161 nC @ 10V
Vgs (Max)	±20 V	±20 V
Input Capacitance (Ciss) (Max) @ Vds	5317 pF @ 25V	5317 pF @ 25V
Power Dissipation (Max)	83 W (Tc)	83 W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	DirectFET™ Isometric MF	DirectFET™ Isometric MF
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
FET Type	N-Channel	N-Channel
Series	StrongIRFET™	StrongIRFET™
RoHS Status	ROHS3 Compliant	Not specified
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Not specified
REACH Status	REACH Unaffected	Not specified

Engineering Selection Recommendations

The IRF40DM229 from International Rectifier (Active product status) serves as the direct substitute for the obsolete Infineon Technologies IRF40DM229. Both parts share identical electrical specifications, mechanical packaging, and operational characteristics across all provided parameters.

The International Rectifier variant maintains Active product status, ensuring ongoing availability and supply chain support. This substitution is based on complete parameter equivalence and identical package geometry (DirectFET™ Isometric MF surface mount).

The Infineon Technologies version carries ROHS3 Compliance and REACH Unaffected certifications. Compliance documentation for the International Rectifier variant should be verified against specific application regulatory requirements prior to implementation.

Frequently Asked Questions (FAQ)

Q: Can the IRF40DM229 from International Rectifier directly replace the obsolete Infineon Technologies IRF40DM229?

A: Yes. Both parts are electrically and mechanically identical across all specified parameters, including Vdss (40V), Id (159A), Rds On (1.85 mOhm), and package type (DirectFET™ Isometric MF surface mount). Direct substitution is supported without circuit modification.

Q: What are the critical parameters that determine substitution compatibility for this MOSFET?

A: Substitution compatibility is determined by: Drain to Source Voltage (40V), Continuous Drain Current (159A @ 25°C), On-Resistance (1.85 mOhm @ 97A, 10V), Gate Threshold Voltage (3.9V @ 100µA), Gate Charge (161 nC @ 10V), Maximum Gate Voltage (±20V), Input Capacitance (5317 pF @ 25V), Power Dissipation (83W), Operating Temperature Range (-55°C to 150°C), and DirectFET™ Isometric MF package geometry.

Q: Are there packaging differences between the Infineon and International Rectifier versions?

A: No. Both versions use identical DirectFET™ Isometric MF surface mount packaging. PCB layout and thermal management considerations remain unchanged during substitution.

Q: What is the product status difference, and does it affect substitution?

A: The Infineon Technologies version is Obsolete, while the International Rectifier version is Active. Active status indicates ongoing manufacturing and supply availability. This difference supports the substitution recommendation for design continuity and supply chain reliability.

Q: Should compliance certifications be verified before implementation?

A: Compliance documentation should be reviewed against specific application requirements. The Infineon version specifies ROHS3 Compliance and REACH Unaffected status. Equivalent certifications for the International Rectifier variant should be confirmed through the manufacturer's technical documentation.

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