IRF3808SPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3808SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 106A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-current switching applications requiring 200W power dissipation capability. The IRF3808SPBF is discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	106	A
On-State Resistance (Rds On) @ 82A, 10V	7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	220	nC
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Technology	N-Channel MOSFET	Metal Oxide

Substitute Part Grouping Explanation

Substitution of the IRF3808SPBF is determined by the following critical parameters:

Mandatory Compatibility Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Package Type: Must be D2PAK (TO-263-3) surface mount
FET Type: Must be N-Channel MOSFET
Gate Voltage (Vgs Max): Must support ±20V operation
Operating Temperature Range: Must span -55°C to 175°C

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): Substitute must support minimum 106A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance
Power Dissipation: Substitute must handle minimum 200W
Gate Charge (Qg): Lower values reduce switching losses

Substitute parts are grouped into two categories: Direct Replacements (matching or exceeding all critical parameters) and Functional Alternatives (meeting voltage and current requirements with different performance characteristics).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Product Status	Package
IRF3808SPBF	Infineon	75	106	7 @ 82A, 10V	220 @ 10V	200	Discontinued	D2PAK
PSMN008-75B,118	Nexperia USA Inc.	75	75	8.5 @ 25A, 10V	122.8 @ 10V	230	Active	D2PAK
PSMN6R5-80BS,118	Nexperia USA Inc.	80	100	6.9 @ 15A, 10V	71 @ 10V	210	Active	D2PAK
STB140NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	142 @ 10V	300	Active	D2PAK
STB140NF75T4	STMicroelectronics	75	120	7.5 @ 70A, 10V	218 @ 10V	310	Active	D2PAK
STB150NF55T4	STMicroelectronics	55	120	6 @ 60A, 10V	190 @ 10V	300	Active	D2PAK
STB160N75F3	STMicroelectronics	75	120	4 @ 60A, 10V	85 @ 10V	330	Active	D2PAK
STB75NF75LT4	STMicroelectronics	75	75	11 @ 37.5A, 10V	90 @ 5V	300	Active	D2PAK
STB75NF75T4	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	300	Active	D2PAK
STB85NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	150 @ 10V	300	Active	D2PAK

Engineering Selection Recommendations

Primary Substitute: STB140NF75T4

The STB140NF75T4 from STMicroelectronics is the optimal substitute for the IRF3808SPBF. This device matches the 75V Vdss rating and exceeds the 106A continuous drain current requirement with 120A capability. The on-state resistance of 7.5 mOhm at 70A, 10V is comparable to the original part's 7 mOhm specification. Power dissipation capability of 310W exceeds the original 200W rating. The STB140NF75T4 is in Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). This part is available in Cut Tape and Digi-Reel packaging with 2,749 units in stock.

Secondary Substitute: STB160N75F3

The STB160N75F3 from STMicroelectronics provides superior performance characteristics while maintaining 75V Vdss compatibility. This device delivers 120A continuous drain current with an exceptionally low on-state resistance of 4 mOhm at 60A, 10V, resulting in reduced conduction losses. Gate charge of 85 nC is significantly lower than the original 220 nC, enabling faster switching operation. Power dissipation capability reaches 330W. The STB160N75F3 is Active with full RoHS3 compliance and 2,008 units in stock.

Alternative for Lower Current Applications: PSMN008-75B,118

The PSMN008-75B,118 from Nexperia USA Inc. maintains the 75V Vdss rating but is rated for 75A continuous drain current, making it suitable for applications requiring less than the original 106A specification. This device features a gate charge of 122.8 nC, approximately 56% lower than the IRF3808SPBF, enabling improved switching efficiency. Power dissipation of 230W exceeds the original specification. The part is Active with RoHS3 compliance and 6,490 units in stock.

Higher Voltage Alternative: PSMN6R5-80BS,118

The PSMN6R5-80BS,118 from Nexperia USA Inc. provides 80V Vdss rating with 100A continuous drain current, suitable for applications requiring voltage margin above 75V. The on-state resistance of 6.9 mOhm at 15A, 10V is superior to the original specification. Gate charge of 71 nC enables efficient switching. Power dissipation of 210W meets the original requirement. This part is Active with RoHS3 compliance and 5,081 units in stock.

All substitute parts maintain D2PAK surface mount packaging, N-Channel MOSFET technology, ±20V gate voltage capability, and -55°C to 175°C operating temperature range. All substitutes are RoHS3 compliant and REACH unaffected.

Frequently Asked Questions (FAQ)

Q: Can the STB140NF55T4 or STB85NF55T4 be used as substitutes for the IRF3808SPBF?

A: These parts have a Vdss rating of 55V, which is below the original 75V specification. While they may function in applications with lower voltage stress, they do not meet the mandatory voltage compatibility requirement for direct substitution. Use only if your application operates at 55V or below.

Q: What is the difference between STB140NF75T4 and STB160N75F3?

A: Both parts maintain 75V Vdss and 120A continuous drain current ratings. The STB160N75F3 features significantly lower on-state resistance (4 mOhm versus 7.5 mOhm) and lower gate charge (85 nC versus 218 nC), resulting in reduced conduction and switching losses. The STB160N75F3 is the superior choice for efficiency-critical applications.

Q: Is the PSMN008-75B,118 suitable for my application?

A: The PSMN008-75B,118 is rated for 75A continuous drain current, which is 31A below the original IRF3808SPBF specification of 106A. This part is suitable only if your application requires 75A or less. For applications requiring the full 106A capability, select STB140NF75T4 or STB160N75F3.

Q: Do all substitute parts use the same D2PAK package?

A: Yes. All substitute parts listed use the D2PAK (TO-263-3) surface mount package with 2 leads plus tab configuration, ensuring mechanical and thermal compatibility with the original IRF3808SPBF footprint.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and enable faster switching operation. The PSMN6R5-80BS,118 (71 nC) and STB160N75F3 (85 nC) offer significant switching efficiency improvements over the original 220 nC specification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: Which substitute offers the best thermal performance?

A: The STB160N75F3 provides the highest power dissipation capability at 330W, compared to the original 200W specification. This device also features the lowest on-state resistance at 4 mOhm, minimizing heat generation during conduction.

Q: Can I use a substitute with higher Vdss rating?

A: Yes. The PSMN6R5-80BS,118 with 80V Vdss is compatible with the IRF3808SPBF application. Higher voltage ratings provide additional safety margin and do not compromise functionality in 75V applications.

Q: What inventory status should I consider for procurement?

A: All substitute parts are in Active product status with substantial inventory availability. STB75NF75T4 has the highest stock level at 43,400 units, while STB160N75F3 has the lowest at 2,008 units. Verify current inventory with your supplier before finalizing procurement decisions.

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