IRF3808LPBF Equivalent & Substitute Parts

Part Overview

The IRF3808LPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 106A continuous drain current at 25°C. This device is packaged in TO-262-3 (I2PAK) configuration and is designed for high-current switching applications requiring through-hole mounting. The IRF3808LPBF is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support.

Substiute Parts

IRF3808LPBF
Infineon TechnologiesIn Stock: 901IRF3808LPBF Datasheet
IRF3808LPBF
Current Part
IRFZ14L
Vishay SiliconixIn Stock: 687IRFZ14L Datasheet
IRFZ14L
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 106 A (Tc)
Rds On (Max) @ Id, Vgs 7 mOhm @ 82A, 10V
Power Dissipation (Max) 200 W (Tc)
Mounting Type Through Hole
Package / Case TO-262-3
Operating Temperature Range -55 to 175 °C (TJ)

Substitute Part Grouping Explanation

Substitution of the IRF3808LPBF requires strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: N-Channel (mandatory match)
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA (mandatory match for through-hole mounting compatibility)
  • Mounting Type: Through Hole (mandatory match)
  • Operating Temperature Range: -55°C to 175°C (TJ) (mandatory match)
  • Vgs (Max): ±20V (mandatory match for gate drive compatibility)
  • Drive Voltage (Max Rds On): 10V (mandatory match for on-resistance specification point)

Secondary Substitution Criteria (Allowable Variations):

  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 75V
  • Current - Continuous Drain (Id) @ 25°C: Substitute must equal or exceed 106A (Tc)
  • Rds On (Max) @ Id, Vgs: Substitute must equal or be lower than 7mOhm
  • Power Dissipation (Max): Substitute must equal or exceed 200W (Tc)

The IRFZ14L does not meet the mandatory substitution criteria for this application. The IRFZ14L has a Vdss rating of 60V (below the required 75V), continuous drain current of 10A (significantly below the required 106A), and maximum power dissipation of 43W (Tc) (below the required 200W). These parameter mismatches indicate the IRFZ14L is not a suitable equivalent for the IRF3808LPBF.

Parameter Comparison

Parameter IRF3808LPBF (Main Part) IRFZ14L (Listed Substitute) Match Status
FET Type N-Channel N-Channel ✓ Match
Drain to Source Voltage (Vdss) 75 V 60 V ✗ Below Required
Current - Continuous Drain (Id) @ 25°C 106 A (Tc) 10 A (Tc) ✗ Below Required
Rds On (Max) @ Id, Vgs 7 mOhm @ 82A, 10V 200 mOhm @ 6A, 10V ✗ Above Maximum
Power Dissipation (Max) 200 W (Tc) 43 W (Tc) ✗ Below Required
Drive Voltage (Max Rds On) 10 V 10 V ✓ Match
Vgs (Max) ±20 V ±20 V ✓ Match
Operating Temperature Range -55 to 175 °C (TJ) -55 to 175 °C (TJ) ✓ Match
Mounting Type Through Hole Through Hole ✓ Match
Package / Case TO-262-3 TO-262-3 ✓ Match
Product Status Obsolete Active ✓ Active Available

Engineering Selection Recommendations

The IRF3808LPBF is classified as obsolete. While the IRFZ14L shares identical package configuration (TO-262-3) and gate drive specifications (10V, ±20V Vgs), it does not qualify as a functional equivalent due to critical electrical parameter mismatches.

The IRFZ14L exhibits the following deficiencies relative to the IRF3808LPBF requirements:

  • Vdss rating of 60V is insufficient for applications requiring 75V blocking voltage
  • Continuous drain current of 10A cannot support circuits designed for 106A operation
  • Maximum on-resistance of 200mOhm (at 6A, 10V) exceeds the 7mOhm specification
  • Power dissipation capability of 43W (Tc) is inadequate for 200W (Tc) thermal requirements

For applications currently using the IRF3808LPBF, direct substitution with the IRFZ14L will result in circuit failure or performance degradation. Alternative N-Channel MOSFETs with matching or superior electrical ratings, identical TO-262-3 packaging, and active product status must be evaluated separately.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ14L replace the IRF3808LPBF in existing designs?

A: No. The IRFZ14L does not meet the electrical requirements of the IRF3808LPBF. The 60V Vdss rating, 10A continuous current, and 43W power dissipation are insufficient for applications designed around 75V, 106A, and 200W specifications.

Q: Are the packages physically compatible?

A: Both devices use TO-262-3 packaging with identical long-lead through-hole configuration. Physical mounting compatibility exists, but electrical incompatibility prevents functional substitution.

Q: What parameters must an equivalent part match?

A: An equivalent must match the following: N-Channel FET type, TO-262-3 package, through-hole mounting, ±20V Vgs maximum, 10V drive voltage specification, and -55°C to 175°C operating temperature range. Additionally, Vdss must be ≥75V, Id must be ≥106A, Rds On must be ≤7mOhm, and power dissipation must be ≥200W (Tc).

Q: Why is the IRF3808LPBF obsolete?

A: Product status is provided as obsolete by the manufacturer. Inventory availability (806 pcs) may support existing production requirements, but long-term sourcing requires identification of active alternatives.

Q: What is the significance of the Rds On specification point?

A: The Rds On (Max) of 7mOhm @ 82A, 10V defines the on-state resistance at specified gate and drain conditions. This parameter directly impacts power dissipation and thermal performance. Substitutes must maintain equal or lower on-resistance to preserve circuit efficiency and thermal characteristics.

Q: Does RoHS compliance affect substitution decisions?

A: The IRFZ14L is listed as RoHS non-compliant. If RoHS compliance is required for the application, this represents an additional constraint beyond electrical parameter matching.

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