IRF3805SPBF N-Channel MOSFET 55V 75A D2PAK Equivalent & Substitute Parts

Part Overview

The IRF3805SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is designed for high-current switching applications requiring efficient power dissipation up to 300W.

The IRF3805SPBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing production and maintenance applications. Suitable alternatives must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while preserving the D2PAK package form factor.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A
On-Resistance (Rds On) @ 75A, 10V	3.3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	290	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF3805SPBF is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be 55V or higher
Continuous Drain Current (Id): Must be 75A or higher at 25°C
On-Resistance (Rds On): Must not exceed 3.3 mOhm at rated current and 10V gate drive
Package Type: Must be D2PAK (TO-263-3) surface mount
Operating Temperature Range: Must span -55°C to 175°C minimum

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Acceptable range 2V to 4V @ specified test current
Gate Charge (Qg): Lower values preferred for faster switching; upper limit 290 nC @ 10V
Power Dissipation: Must support 300W or higher thermal capability

Substitute parts are grouped into two categories based on voltage and current ratings:

Category A - Direct Electrical Match (55V, 75A): Parts maintaining identical voltage and current specifications with equivalent or superior on-resistance performance.

Category B - Enhanced Performance (55V-60V, 75A-100A): Parts with equal or higher voltage ratings and equal or higher current ratings, suitable for applications where thermal margin or current headroom is beneficial.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	Package
IRF3805SPBF	Infineon	55	75	3.3 @ 75A, 10V	290 @ 10V	300	Discontinued	D2PAK
BUK964R2-55B,118	Nexperia	55	75	3.7 @ 25A, 10V	95 @ 5V	300	Active	D2PAK
PHB191NQ06LT,118	Nexperia	55	75	3.7 @ 25A, 10V	95.6 @ 5V	300	Active	D2PAK
PSMN004-60B,118	Nexperia	60	75	3.6 @ 25A, 10V	168 @ 10V	230	Active	D2PAK
PSMN3R0-60BS,118	Nexperia	60	100	3.2 @ 25A, 10V	130 @ 10V	306	Active	D2PAK
STB150NF55T4	STMicroelectronics	55	120	6 @ 60A, 10V	190 @ 10V	300	Active	D2PAK
STB160N75F3	STMicroelectronics	75	120	4 @ 60A, 10V	85 @ 10V	330	Active	D2PAK

Engineering Selection Recommendations

Category A - Direct Replacement (55V, 75A Rating):

BUK964R2-55B,118 (Nexperia TrenchMOS™) and PHB191NQ06LT,118 (Nexperia TrenchMOS™) provide electrical equivalence to the IRF3805SPBF with identical voltage and current ratings. Both devices are in active production status with AEC-Q101 automotive qualification available for BUK964R2-55B,118. These parts feature lower gate charge (95-95.6 nC @ 5V) compared to the original 290 nC @ 10V, resulting in faster switching characteristics. On-resistance specifications are comparable at 3.7 mOhm @ 25A, 10V. Both maintain 300W power dissipation capability and D2PAK packaging. These are preferred for direct substitution in existing designs.

Category B - Enhanced Performance Alternatives:

PSMN004-60B,118 (Nexperia TrenchMOS™) maintains 75A current rating with increased voltage margin at 60V Vdss. Power dissipation is reduced to 230W, which may require thermal design review in applications operating near maximum power limits. On-resistance of 3.6 mOhm @ 25A, 10V is superior to the original specification.

PSMN3R0-60BS,118 (Nexperia) provides enhanced current capacity at 100A with 60V voltage rating and superior on-resistance of 3.2 mOhm @ 25A, 10V. Power dissipation increases to 306W. This device is suitable for applications requiring additional current margin or lower conduction losses.

STB150NF55T4 (STMicroelectronics STripFET™ II) matches the 55V voltage rating with significantly higher current capacity at 120A. On-resistance is 6 mOhm @ 60A, 10V, which is higher than the original specification. This device is appropriate for applications where current headroom is prioritized over conduction efficiency.

STB160N75F3 (STMicroelectronics STripFET™) provides the highest voltage rating at 75V with 120A current capacity. On-resistance of 4 mOhm @ 60A, 10V and power dissipation of 330W offer balanced performance. This device is suitable for applications requiring enhanced voltage margin.

All substitute parts maintain RoHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and D2PAK surface mount packaging. Selection should be based on specific application requirements for voltage margin, current capacity, conduction losses, and thermal management.

Frequently Asked Questions (FAQ)

Q: Can BUK964R2-55B,118 be used as a direct replacement for IRF3805SPBF?

A: Yes. BUK964R2-55B,118 meets all primary substitution criteria with identical 55V voltage rating and 75A current capacity. On-resistance of 3.7 mOhm @ 25A, 10V is comparable to the original 3.3 mOhm specification. The D2PAK package is identical. Lower gate charge (95 nC @ 5V versus 290 nC @ 10V) results in faster switching response. This part is in active production status.

Q: What is the difference between PHB191NQ06LT,118 and BUK964R2-55B,118?

A: Both devices are Nexperia TrenchMOS™ parts with identical electrical ratings (55V, 75A). PHB191NQ06LT,118 has gate charge of 95.6 nC @ 5V and input capacitance of 7665 pF @ 25V. BUK964R2-55B,118 has gate charge of 95 nC @ 5V and input capacitance of 10220 pF @ 25V. BUK964R2-55B,118 includes AEC-Q101 automotive qualification. Selection depends on specific gate drive circuit requirements and automotive compliance needs.

Q: Why does PSMN3R0-60BS,118 have lower on-resistance despite higher current rating?

A: PSMN3R0-60BS,118 is rated for 100A continuous drain current at 25°C, compared to 75A for the original device. The on-resistance specification of 3.2 mOhm is measured at 25A, 10V, which is a lower test current than the original 75A specification. Lower on-resistance at reduced current levels is typical for higher-current-rated devices due to larger die area and optimized channel design.

Q: Can STB150NF55T4 be used in applications requiring 75A continuous current?

A: Yes. STB150NF55T4 is rated for 120A continuous drain current, which exceeds the 75A requirement. However, on-resistance is 6 mOhm @ 60A, 10V, which is higher than the original 3.3 mOhm specification. This results in increased conduction losses and heat generation. Use this device only if current margin is more critical than conduction efficiency, or if thermal design can accommodate the additional power dissipation.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All listed substitute parts use D2PAK (TO-263-3) surface mount packaging with identical pinout and footprint compatibility. PCB layout modifications are not required for package substitution.

Q: What is the significance of gate charge differences between substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge enables faster switching and reduces gate driver power consumption. IRF3805SPBF has 290 nC @ 10V, while Nexperia TrenchMOS™ parts have 95-95.6 nC @ 5V. Lower gate charge may require gate driver circuit verification to ensure adequate drive capability and switching speed compatibility.

Q: Which substitute part is recommended for new designs?

A: BUK964R2-55B,118 or PHB191NQ06LT,118 are recommended for new designs. Both are in active production, meet all electrical requirements, and offer improved switching characteristics through lower gate charge. BUK964R2-55B,118 includes AEC-Q101 automotive qualification if required.

Q: Can PSMN004-60B,118 be used if power dissipation is a concern?

A: PSMN004-60B,118 has reduced power dissipation of 230W compared to the original 300W specification. This device is suitable only if the application operates below 230W thermal limits. If the original design requires 300W dissipation capability, this part is not appropriate without thermal design modification.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are RoHS3 compliant and REACH unaffected. Moisture sensitivity level is MSL 1 (unlimited) for all devices. BUK964R2-55B,118 includes AEC-Q101 automotive qualification. ECCN classification is EAR99 for all parts.

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