IRF3805S N-Channel MOSFET 55V 75A D2PAK Equivalent & Substitute Parts

Part Overview

The IRF3805S is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 55V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is classified as Obsolete, indicating it is no longer in active production. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts maintain compatibility through identical or superior electrical ratings and the same D2PAK (TO-263-3) mechanical package.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 75A, 10V	3.3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	290	nC
Power Dissipation (Max)	330	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate Voltage (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRF3805S is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 55V
Continuous Drain Current (Id) must be equal to or greater than 75A at 25°C
Gate Threshold Voltage (Vgs(th)) must be compatible with 4V nominal operation
Maximum Gate Voltage (Vgs Max) must be ±20V or greater
Operating Temperature Range must encompass -55°C to 175°C

Mechanical Compatibility Criteria:

Package must be D2PAK (TO-263-3) surface mount configuration
Pin configuration must be identical (2 Leads + Tab)

Compliance Criteria:

RoHS3 compliance preferred for new designs
REACH Unaffected status required

Substitute parts are grouped into two categories: direct replacements with matched or superior current ratings at the same voltage, and higher-voltage alternatives that maintain backward compatibility through superior electrical performance.

Parameter Comparison

Parameter	IRF3805S	STB150NF55T4	IPB029N06N3GATMA1	IPB037N06N3GATMA1	PSMN004-60B,118	PSMN3R0-60BS,118
Manufacturer	Infineon	STMicroelectronics	Infineon	Infineon	Nexperia	Nexperia
Vdss (V)	55	55	60	60	60	60
Id @ 25°C (A)	75	120	120	90	75	100
Rds On @ 10V (mOhm)	3.3 @ 75A	6.0 @ 60A	2.9 @ 100A	3.7 @ 90A	3.6 @ 25A	3.2 @ 25A
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4 @ 118µA	4 @ 90µA	4 @ 1mA	4 @ 1mA
Qg @ 10V (nC)	290	190	165	98	168	130
Power Dissipation (W)	330	300	188	188	230	306
Vgs Max (V)	±20	±20	±20	±20	±20	±20
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute (Same Voltage Rating):

STB150NF55T4 from STMicroelectronics is the primary substitute for the IRF3805S. Both devices share the identical 55V Vdss rating, maintaining exact voltage compatibility. The STB150NF55T4 provides superior current handling at 120A versus 75A, lower gate charge (190 nC vs. 290 nC), and is in Active product status with ROHS3 compliance. The D2PAK package is identical. This part is recommended for direct replacement in existing designs without circuit modification.

Secondary Substitutes (Higher Voltage Rating):

IPB029N06N3GATMA1, IPB037N06N3GATMA1, PSMN004-60B,118, and PSMN3R0-60BS,118 all operate at 60V Vdss, providing 5V additional voltage margin. These parts are suitable for applications where the circuit design permits higher voltage operation. All four maintain the D2PAK package and -55°C to 175°C temperature range.

IPB029N06N3GATMA1 (Infineon OptiMOS™): 120A rating, 2.9 mOhm Rds On, lowest gate charge (165 nC), Active status, highest current capability
IPB037N06N3GATMA1 (Infineon OptiMOS™): 90A rating, 3.7 mOhm Rds On, 98 nC gate charge, Active status, balanced performance
PSMN004-60B,118 (Nexperia TrenchMOS™): 75A rating, 3.6 mOhm Rds On, 168 nC gate charge, Active status, matched current to original
PSMN3R0-60BS,118 (Nexperia): 100A rating, 3.2 mOhm Rds On, 130 nC gate charge, Active status, superior power dissipation (306W)

Compliance Consideration:

All substitute parts are ROHS3 compliant and REACH Unaffected, meeting current regulatory requirements. The IRF3805S is RoHS non-compliant, making substitution necessary for applications subject to RoHS directives.

Frequently Asked Questions (FAQ)

Q: Can I use a 60V rated MOSFET as a direct replacement for the 55V IRF3805S?

A: Yes. A 60V rated device is electrically compatible with a 55V application. The higher voltage rating provides additional safety margin and does not affect circuit operation. All substitute parts listed at 60V Vdss are suitable for direct substitution in 55V applications.

Q: What is the significance of gate charge (Qg) differences between the IRF3805S and substitute parts?

A: Gate charge affects switching speed and driver power requirements. Lower gate charge (such as 98 nC in IPB037N06N3GATMA1 versus 290 nC in IRF3805S) results in faster switching transitions and reduced driver power dissipation. This is beneficial in high-frequency switching applications but does not prevent substitution in standard applications.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed are supplied in D2PAK (TO-263-3) surface mount package with identical pin configuration (2 Leads + Tab). No PCB layout modification is required.

Q: Why is the IRF3805S classified as Obsolete?

A: The IRF3805S is no longer manufactured by Infineon Technologies. Obsolete classification indicates end-of-life status. Substitute parts from active product lines (STB150NF55T4, IPB series, PSMN series) are recommended for new designs and ongoing production.

Q: Which substitute part should I choose for maximum current handling?

A: IPB029N06N3GATMA1 provides the highest continuous drain current at 120A, compared to 75A in the original IRF3805S. This part is suitable if your application requires higher current capacity and operates within the 60V Vdss rating.

Q: What is the difference between Infineon OptiMOS™ and Nexperia TrenchMOS™ technologies?

A: Both are advanced MOSFET technologies that provide improved performance characteristics. OptiMOS™ (IPB series) and TrenchMOS™ (PSMN series) differ in internal structure and manufacturing process, resulting in different Rds On and gate charge characteristics. Both are suitable substitutes; selection depends on specific application requirements for switching speed and power dissipation.

Q: Can I use PSMN3R0-60BS,118 if my circuit is designed for 75A operation?

A: Yes. PSMN3R0-60BS,118 is rated for 100A continuous drain current, exceeding the 75A requirement. The device will operate safely at 75A with additional current margin. The higher power dissipation rating (306W) provides thermal headroom.

Q: Are there any temperature range limitations when substituting?

A: No. All substitute parts maintain the identical operating temperature range of -55°C to 175°C (TJ) as the IRF3805S. Temperature performance is equivalent across all listed alternatives.

Q: What does ROHS3 compliance mean for my application?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. This is mandatory for products sold in the European Union and increasingly required globally. The IRF3805S is RoHS non-compliant; substitution with ROHS3-compliant parts ensures regulatory compliance.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message