IRF3717PBF N-Channel MOSFET 20V 20A Equivalent & Substitute Parts

Part Overview

The IRF3717PBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device is rated for 20V drain-to-source voltage with 20A continuous drain current at 25°C, housed in an 8-SO surface mount package. The IRF3717PBF is discontinued at DiGi Electronics, making identification of equivalent substitute components necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	20	A
Rds On (Max) @ 20A, 10V	4.4	mOhm
Vgs(th) (Max) @ 250µA	2.45	V
Gate Charge (Qg) (Max) @ 4.5V	33	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—

Substitute Part Grouping Explanation

Substitution of the IRF3717PBF is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V minimum
Continuous Drain Current (Id): 20A minimum at 25°C
On-State Resistance (Rds On): Must not exceed the maximum specified for the application
Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Equivalence Criteria:

Mounting Type: Surface Mount
Package / Case: 8-SOIC footprint compatibility (0.154", 3.90mm Width)

The AO4402 from Alpha & Omega Semiconductor Inc. meets these substitution criteria. Both devices share identical voltage ratings (20V Vdss), current ratings (20A Id), operating temperature range (-55°C to 150°C), and package footprint (8-SOIC). Differences in secondary parameters such as Rds On, gate charge, and power dissipation are within acceptable tolerance for component substitution in this category.

Parameter Comparison

Parameter	IRF3717PBF (Infineon)	AO4402 (Alpha & Omega)	Unit
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	20	20	V
Current - Continuous Drain (Id) @ 25°C	20	20	A
Rds On (Max) @ 20A	4.4 @ 10V	5.5 @ 4.5V	mOhm
Vgs(th) (Max) @ 250µA	2.45	1.6	V
Gate Charge (Qg) (Max)	33 @ 4.5V	43 @ 10V	nC
Power Dissipation (Max)	2.5	3.1	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IRF3717PBF Status: Discontinued at DiGi Electronics. This part is no longer actively supported for new procurement through primary distribution channels.

AO4402 Status: Not For New Designs. This substitute part carries a "Not For New Designs" designation, indicating it is available for existing design support and legacy applications but is not recommended for new product development.

Compliance Considerations: Both the IRF3717PBF and AO4402 are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. Both devices are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Selection Logic: The AO4402 is electrically and mechanically equivalent to the IRF3717PBF for applications requiring an N-Channel MOSFET with 20V Vdss and 20A continuous drain current in an 8-SOIC package. Component selection should be based on availability, cost, and design timeline requirements. For new designs, evaluation of current-generation alternatives outside the discontinued/legacy product categories is advised.

Frequently Asked Questions (FAQ)

Q: Can the AO4402 be used as a direct replacement for the IRF3717PBF?

A: Yes. Both devices share identical voltage ratings (20V Vdss), current ratings (20A Id), operating temperature range (-55°C to 150°C), and 8-SOIC package footprint. The devices are pin-compatible and functionally equivalent for applications within these electrical specifications.

Q: What are the key differences between the IRF3717PBF and AO4402?

A: The primary differences are on-state resistance (Rds On), gate threshold voltage (Vgs(th)), gate charge (Qg), and power dissipation. The AO4402 exhibits higher Rds On (5.5 mOhm vs. 4.4 mOhm), lower gate threshold voltage (1.6V vs. 2.45V), higher gate charge (43 nC vs. 33 nC), and higher power dissipation (3.1W vs. 2.5W). These differences must be evaluated against specific application requirements.

Q: Are both parts suitable for new designs?

A: The IRF3717PBF is discontinued and the AO4402 carries a "Not For New Designs" status. For new product development, current-generation N-Channel MOSFETs with equivalent electrical specifications should be evaluated.

Q: What is the package compatibility between these parts?

A: Both devices use the 8-SOIC package with identical footprint dimensions (0.154", 3.90mm Width). PCB layout and reflow profiles are compatible without modification.

Q: Are there any regulatory or compliance concerns with substitution?

A: Both parts are ROHS3 compliant, REACH unaffected, and carry identical moisture sensitivity levels (MSL 1). No regulatory barriers exist for substitution within the same application context.

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