IRF3711SPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3711SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device is rated for 20V drain-to-source voltage with 110A continuous drain current in a surface mount D2PAK package. The product status is obsolete, making identification of suitable substitute components essential for ongoing design support, production continuity, and system maintenance.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	IRF3711SPBF	—
Manufacturer	Infineon Technologies	—
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	110	A
On-Resistance (Rds On Max) @ 15A, 10V	6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 4.5V	44	nC
Input Capacitance (Ciss) @ 10V	2980	pF
Power Dissipation (Max)	3.1 (Ta), 120 (Tc)	W
Operating Temperature Range	-55 to 150	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRF3711SPBF requires strict adherence to electrical and mechanical compatibility criteria. The primary substitute identified is the STB200NF03T4 from STMicroelectronics.

Substitution Logic:

The IRF3711SPBF and STB200NF03T4 share the following critical compatibility parameters:

FET Type: Both are N-Channel MOSFETs
Package: Both use D2PAK (TO-263-3) surface mount configuration
Mounting Type: Both are surface mount devices
Gate Voltage Range: Both support ±20V maximum gate voltage
Moisture Sensitivity: Both rated MSL 1 (Unlimited)
Technology: Both use Metal Oxide Semiconductor technology

Key Electrical Differences:

The STB200NF03T4 provides enhanced electrical performance relative to the IRF3711SPBF:

Higher Vdss rating (30V vs. 20V)
Higher continuous drain current (120A vs. 110A)
Lower on-resistance (3.6 mOhm vs. 6 mOhm)
Higher power dissipation capability (300W vs. 120W)
Extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C)

These differences establish the STB200NF03T4 as a direct substitute with superior electrical specifications within the same package footprint.

Parameter Comparison

Parameter	IRF3711SPBF	STB200NF03T4	Unit
Manufacturer	Infineon Technologies	STMicroelectronics	—
FET Type	N-Channel	N-Channel	—
Drain-to-Source Voltage (Vdss)	20	30	V
Continuous Drain Current (Id) @ 25°C	110	120	A
On-Resistance (Rds On Max)	6 @ 15A, 10V	3.6 @ 60A, 10V	mOhm
Gate Threshold Voltage (Vgs(th))	3 @ 250µA	4 @ 250µA	V
Gate Charge (Qg)	44 @ 4.5V	140 @ 10V	nC
Input Capacitance (Ciss)	2980 @ 10V	4950 @ 25V	pF
Power Dissipation (Max)	120 (Tc)	300 (Tc)	W
Operating Temperature Range	-55 to 150	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	Surface Mount	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

Primary Substitute: STB200NF03T4

The STB200NF03T4 is the manufacturer-recommended substitute for the IRF3711SPBF. Selection of this component is based on the following engineering criteria:

Product Status: The STB200NF03T4 is active and in production, ensuring long-term availability and supply chain continuity for the IRF3711SPBF obsolete part.
Package Compatibility: Identical D2PAK surface mount package enables direct PCB footprint compatibility without layout modifications.
Electrical Superiority: The STB200NF03T4 provides higher voltage rating, higher current capacity, and lower on-resistance, making it suitable for applications originally designed for the IRF3711SPBF.
Compliance: Both components share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and HTSUS code (8541.29.0095).
Thermal Performance: Extended operating temperature range (-55°C to 175°C) of the STB200NF03T4 provides additional thermal margin compared to the IRF3711SPBF (-55°C to 150°C).

Frequently Asked Questions (FAQ)

Q: Can the STB200NF03T4 be used as a direct replacement for the IRF3711SPBF without PCB modifications?

A: Yes. Both devices use the D2PAK (TO-263-3) surface mount package with identical pin configuration and footprint. No PCB layout changes are required for mechanical compatibility.

Q: What are the key electrical differences between these two MOSFETs?

A: The STB200NF03T4 has a higher Vdss rating (30V vs. 20V), higher continuous drain current (120A vs. 110A), lower on-resistance (3.6 mOhm vs. 6 mOhm), and higher power dissipation capability (300W vs. 120W). These represent performance enhancements rather than limitations.

Q: Is the STB200NF03T4 suitable for applications with 20V supply voltage?

A: Yes. The STB200NF03T4 is rated for 30V Vdss, which exceeds the 20V requirement of the original IRF3711SPBF application. The higher voltage rating provides additional safety margin.

Q: Are there any gate drive considerations when switching from IRF3711SPBF to STB200NF03T4?

A: Both devices support ±20V maximum gate voltage. The STB200NF03T4 has a slightly higher gate threshold voltage (4V vs. 3V) and higher gate charge (140 nC vs. 44 nC), which may require gate drive circuit evaluation for high-frequency switching applications.

Q: What is the moisture sensitivity level for both devices?

A: Both the IRF3711SPBF and STB200NF03T4 are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Why is the IRF3711SPBF marked as obsolete?

A: The IRF3711SPBF is obsolete due to product lifecycle discontinuation by Infineon Technologies. The STB200NF03T4 represents the active alternative from STMicroelectronics with superior electrical specifications and ongoing production support.

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