IRF3711S MOSFET N-Channel 20V 110A Equivalent & Substitute Parts

Part Overview

The IRF3711S is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications requiring 20V drain-to-source voltage rating and 110A continuous drain current capability. The device is housed in a D2PAK surface mount package and features the HEXFET® series technology platform.

This part is classified as obsolete, making equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitutes must maintain functional compatibility through matching or exceeding critical electrical parameters while preserving the D2PAK package form factor.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	110	A (Tc)
On-State Resistance (Rds On Max) @ 15A, 10V	6	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	3	V
Gate Charge (Qg Max) @ 4.5V	44	nC
Input Capacitance (Ciss Max) @ 10V	2980	pF
Power Dissipation (Max)	3.1 (Ta), 120 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRF3711S requires strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

FET Type: N-Channel only
Package: D2PAK (TO-263-3) surface mount configuration
Drain-to-Source Voltage (Vdss): Must equal or exceed 20V
Continuous Drain Current (Id): Must equal or exceed 110A at 25°C
On-State Resistance (Rds On): Must equal or be lower than 6 mOhm at specified conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible with 3V maximum specification
Operating Temperature Range: Must encompass or exceed -55°C to 150°C

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values preferred for faster switching
Input Capacitance (Ciss): Lower values preferred for reduced drive requirements
Power Dissipation: Higher ratings provide thermal margin

The STB80NF03L-04T4 from STMicroelectronics is identified as a manufacturer-recommended substitute. While this part exhibits a higher Vdss rating (30V versus 20V) and lower continuous current rating (80A versus 110A), it maintains D2PAK packaging and meets the threshold voltage and on-state resistance requirements for circuit-level compatibility in applications where the 20V voltage margin is not fully utilized.

Parameter Comparison

Parameter	IRF3711S (Infineon)	STB80NF03L-04T4 (STMicroelectronics)	Unit
Manufacturer	Infineon Technologies	STMicroelectronics	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	20	30	V
Continuous Drain Current (Id) @ 25°C	110	80	A (Tc)
Rds On (Max) @ Id, Vgs	6 @ 15A, 10V	4 @ 40A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	3	1	V
Gate Charge (Qg Max) @ 4.5V	44	110	nC
Input Capacitance (Ciss Max)	2980 @ 10V	5500 @ 25V	pF
Power Dissipation (Max)	3.1 (Ta), 120 (Tc)	300 (Tc)	W
Operating Temperature Range	-55 to 150	-60 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)	Surface Mount
Product Status	Obsolete	Obsolete	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Product Status Consideration: Both the IRF3711S and STB80NF03L-04T4 are classified as obsolete components. Selection between these parts or identification of additional alternatives must account for long-term supply availability and design lifecycle requirements.

Compliance and Certification: The STB80NF03L-04T4 holds ROHS3 compliance status, whereas the IRF3711S is RoHS non-compliant. For applications subject to RoHS regulatory requirements, the STB80NF03L-04T4 provides compliance alignment. Both parts maintain REACH Unaffected status and EAR99 export classification.

Electrical Performance Trade-offs: The STB80NF03L-04T4 substitute exhibits higher on-state resistance (4 mOhm versus 6 mOhm) at higher current levels (40A versus 15A), resulting in lower conduction losses in high-current operating regions. However, the substitute's lower continuous current rating (80A versus 110A) and higher gate charge (110 nC versus 44 nC) require circuit-level evaluation for applications operating near the IRF3711S maximum current specification.

Thermal Performance: The STB80NF03L-04T4 provides significantly higher power dissipation capability (300W at Tc versus 120W at Tc), offering enhanced thermal margin in applications with sustained high-current operation.

Voltage Margin: The substitute's 30V Vdss rating exceeds the IRF3711S 20V specification, providing additional voltage headroom. This characteristic is advantageous in circuits with transient overvoltage conditions but does not restrict substitution in applications operating within the 20V envelope.

Frequently Asked Questions (FAQ)

Q: Can the STB80NF03L-04T4 directly replace the IRF3711S in all applications?

A: Direct substitution is not universal. The STB80NF03L-04T4 exhibits lower continuous current rating (80A versus 110A) and higher gate charge (110 nC versus 44 nC). Applications operating at or near the IRF3711S maximum current specification or requiring minimal gate drive power require circuit-level analysis. The substitute is suitable for applications utilizing less than 80A continuous current.

Q: What is the significance of the different Rds On measurement conditions?

A: The IRF3711S specifies Rds On at 15A and 10V gate voltage, while the STB80NF03L-04T4 specifies at 40A and 10V gate voltage. The substitute's lower absolute Rds On value (4 mOhm versus 6 mOhm) reflects measurement at higher current. Direct numerical comparison is not valid; circuit simulation or empirical testing is required to determine conduction loss differences at specific operating points.

Q: Does the higher gate charge of the substitute affect circuit design?

A: Yes. The STB80NF03L-04T4 gate charge of 110 nC (versus 44 nC for the IRF3711S) requires proportionally higher gate drive current or longer switching times. Gate driver circuits must be evaluated to confirm adequate drive capability. Higher gate charge increases switching losses and may require gate resistor adjustment.

Q: Are both parts available in the same packaging configuration?

A: Yes. Both the IRF3711S and STB80NF03L-04T4 utilize D2PAK (TO-263-3) surface mount packaging with identical pin configuration and PCB footprint compatibility. Physical board-level substitution is feasible without layout modification.

Q: What is the impact of the substitute's higher input capacitance?

A: The STB80NF03L-04T4 input capacitance (5500 pF @ 25V) exceeds the IRF3711S (2980 pF @ 10V). Higher input capacitance increases gate charge requirements and switching transition times. Gate driver output impedance and switching frequency must be evaluated to confirm acceptable performance.

Q: Why does the substitute have a higher operating temperature maximum?

A: The STB80NF03L-04T4 maximum junction temperature of 175°C (versus 150°C for the IRF3711S) reflects STMicroelectronics process technology and design margins. This characteristic provides additional thermal headroom but does not restrict substitution in applications operating within the IRF3711S temperature envelope.

Q: Is RoHS compliance a mandatory substitution criterion?

A: RoHS compliance is a regulatory requirement dependent on application end-use and market jurisdiction. The STB80NF03L-04T4 ROHS3 compliance status aligns with current regulatory frameworks. The IRF3711S non-compliance status may restrict use in regulated markets or applications subject to RoHS directives.

Q: What inventory considerations apply to these obsolete components?

A: The IRF3711S maintains 1658 pieces in stock, while the STB80NF03L-04T4 maintains 18839 pieces in stock. The substitute's significantly higher inventory availability provides supply security advantages for ongoing production requirements.

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