IRF3710STRRPBF N-Channel 100V 57A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3710STRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series. This device operates at 100V drain-to-source voltage with a continuous drain current rating of 57A at 25°C and a maximum power dissipation of 200W. The part is packaged in a D2PAK (TO-263-3) surface mount configuration with a moisture sensitivity level of 1 (unlimited).

The IRF3710STRRPBF is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain compatibility with the original electrical specifications and mechanical package requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	57	A (Tc)
On-State Resistance (Rds On) @ 28A, 10V	23	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	130	nC
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRF3710STRRPBF are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 100V
N-Channel FET topology
Surface mount D2PAK (TO-263-3) package
Operating temperature range: -55°C to 175°C
RoHS3 compliance

Secondary Compatibility Factors:

Continuous drain current (Id): 50A to 80A range acceptable
On-state resistance (Rds On): Lower values indicate improved performance
Gate charge (Qg): Lower values reduce drive circuit requirements
Power dissipation capability: 100W minimum

Substitutes are grouped into two categories:

Category 1: Parametric Equivalents — Parts with identical or near-identical electrical specifications and the same package type, suitable for direct replacement without circuit modification.

Category 2: Functional Substitutes — Parts with comparable voltage and current ratings but different drain current or power dissipation characteristics, requiring design verification for specific applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	Package
IRF3710STRRPBF	Infineon	100	57	23 @ 28A, 10V	130 @ 10V	200	Obsolete	D2PAK
IRF3710STRLPBF	Infineon	100	57	23 @ 28A, 10V	130 @ 10V	200	Active	D2PAK
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	64 @ 10V	100	Active	TO-263-3
PSMN016-100BS,118	Nexperia	100	57	16 @ 15A, 10V	49 @ 10V	148	Active	D2PAK
PHB45NQ10T,118	Nexperia	100	47	25 @ 25A, 10V	61 @ 10V	150	Active	D2PAK
PHB27NQ10T,118	Nexperia	100	28	50 @ 14A, 10V	30 @ 10V	107	Active	D2PAK
BUK7626-100B,118	Nexperia	100	49	26 @ 25A, 10V	38 @ 10V	157	Obsolete	D2PAK
PSMN015-100B,118	Nexperia	100	75	15 @ 25A, 10V	90 @ 10V	300	Active	D2PAK
PSMN009-100B,118	Nexperia	100	75	8.8 @ 25A, 10V	156 @ 10V	230	Active	D2PAK
STB80NF10T4	STMicroelectronics	100	80	15 @ 40A, 10V	182 @ 10V	300	Active	D2PAK
STB40NF10LT4	STMicroelectronics	100	40	33 @ 20A, 10V	64 @ 4.5V	150	Active	D2PAK

Engineering Selection Recommendations

Recommended Primary Substitute: IRF3710STRLPBF

The IRF3710STRLPBF is the direct parametric equivalent to the IRF3710STRRPBF. This part maintains identical electrical specifications including 100V Vdss, 57A continuous drain current, 23mOhm Rds On, and 200W power dissipation. The device is packaged in D2PAK (TO-263-3) surface mount configuration and is currently in active production status. Both parts are ROHS3 compliant with unlimited moisture sensitivity level (MSL 1). The primary difference is packaging format: IRF3710STRLPBF is supplied in Tape & Reel (TR) format, whereas the original IRF3710STRRPBF was supplied in Digi-Reel® format. This part requires no circuit modification and provides direct replacement capability.

Recommended Secondary Substitutes:

PSMN016-100BS,118 — This Nexperia TrenchMOS™ device matches the 57A continuous drain current specification and maintains 100V Vdss rating. The part offers improved on-state resistance (16mOhm vs. 23mOhm) and reduced gate charge (49nC vs. 130nC), resulting in lower switching losses and reduced drive circuit requirements. Power dissipation is rated at 148W, which is lower than the original 200W specification. This part is suitable for applications where the original power dissipation margin is not critical. ROHS3 compliant, active status.

PSMN015-100B,118 — This Nexperia device provides higher current capability (75A) with improved on-state resistance (15mOhm) and increased power dissipation (300W). The part is suitable for applications requiring higher current headroom or thermal margin. Gate charge is 90nC, intermediate between the original and lower-current alternatives. ROHS3 compliant, active status.

STB80NF10T4 — This STMicroelectronics STripFET™ II device offers the highest current rating (80A) with 15mOhm on-state resistance and 300W power dissipation. The part provides maximum performance margin for high-current applications. Gate charge is elevated at 182nC. ROHS3 compliant, active status.

Alternative Substitutes for Current-Limited Applications:

PHB45NQ10T,118 — Nexperia TrenchMOS™ device rated at 47A continuous drain current with 25mOhm on-state resistance and 150W power dissipation. Suitable for applications where the original 57A rating exceeds requirements. Gate charge is 61nC. ROHS3 compliant, active status.

STB40NF10LT4 — STMicroelectronics STripFET™ II device rated at 40A continuous drain current with 33mOhm on-state resistance and 150W power dissipation. Suitable for lower-current applications. ROHS3 compliant, active status.

Not Recommended:

PHB27NQ10T,118 — Current rating of 28A is significantly below the original 57A specification and is suitable only for substantially different application requirements.

BUK7626-100B,118 — Obsolete status and lower current rating (49A) make this part unsuitable for new designs.

IPB50N10S3L16ATMA1 — Current rating of 50A is below the original specification, and power dissipation of 100W is substantially reduced. Suitable only for applications with reduced power requirements.

Frequently Asked Questions (FAQ)

Q: Can IRF3710STRLPBF be used as a direct replacement for IRF3710STRRPBF?

A: Yes. IRF3710STRLPBF is the parametric equivalent with identical electrical specifications. The only difference is packaging format (Tape & Reel vs. Digi-Reel®). No circuit modification is required.

Q: What is the difference between the substitute parts in terms of current rating?

A: Substitute parts range from 28A to 80A continuous drain current. The original IRF3710STRRPBF is rated at 57A. Parts rated below 57A (PHB27NQ10T at 28A, STB40NF10LT4 at 40A) are suitable only for applications with lower current requirements. Parts rated above 57A (PSMN015-100B at 75A, STB80NF10T4 at 80A) provide additional current margin and are suitable for high-current applications.

Q: How does on-state resistance (Rds On) affect substitute selection?

A: Lower Rds On values reduce conduction losses and heat generation. The original IRF3710STRRPBF has 23mOhm Rds On. Substitutes with lower Rds On (such as PSMN016-100BS at 16mOhm or STB80NF10T4 at 15mOhm) improve efficiency. Substitutes with higher Rds On (such as STB40NF10LT4 at 33mOhm) increase conduction losses and are suitable only for lower-current applications.

Q: What is the significance of gate charge (Qg) in substitute selection?

A: Gate charge determines the energy required to switch the device and affects drive circuit design. The original IRF3710STRRPBF has 130nC gate charge. Substitutes with lower gate charge (such as IPB50N10S3L16ATMA1 at 64nC or PSMN016-100BS at 49nC) reduce drive circuit requirements and switching losses. Substitutes with higher gate charge (such as STB80NF10T4 at 182nC) require more robust drive circuits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and have unlimited moisture sensitivity level (MSL 1), matching the original IRF3710STRRPBF specifications.

Q: Can I use a substitute with lower power dissipation rating?

A: Substitutes with lower power dissipation ratings (such as IPB50N10S3L16ATMA1 at 100W or PHB45NQ10T at 150W) are suitable only if the application's thermal requirements do not exceed the substitute's rating. The original IRF3710STRRPBF is rated at 200W. Verify that the substitute's power dissipation margin is adequate for your specific application.

Q: What is the difference between active and obsolete product status?

A: Active parts are in current production and have guaranteed long-term availability. Obsolete parts (IRF3710STRRPBF, BUK7626-100B) are no longer manufactured and have limited remaining inventory. For new designs, select only active-status substitutes to ensure supply chain continuity.

Q: Are all substitute parts available in D2PAK package?

A: Yes. All substitute parts listed are packaged in D2PAK (TO-263-3) surface mount configuration, matching the original IRF3710STRRPBF package type. This ensures mechanical compatibility with existing PCB layouts.

Q: Which substitute offers the best overall performance?

A: PSMN016-100BS,118 provides the best balance of specifications for most applications: it matches the original 57A current rating, offers improved on-state resistance (16mOhm vs. 23mOhm), and has significantly reduced gate charge (49nC vs. 130nC). The part is active status and ROHS3 compliant. However, the power dissipation rating (148W) is lower than the original (200W), so verify thermal requirements for your specific application.

Q: Can I substitute a higher-current device in a circuit designed for 57A?

A: Yes. Devices rated at 75A or 80A (PSMN015-100B, PSMN009-100B, STB80NF10T4) can be used in circuits designed for 57A. The higher current rating provides additional margin and does not create compatibility issues. However, verify that the gate charge and on-state resistance characteristics are acceptable for your drive circuit and thermal design.

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