IRF3710STRR N-Channel 100V 57A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3710STRR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-source voltage with 57A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and delivers 200W maximum power dissipation. This part operates across the temperature range of -55°C to 175°C and belongs to the HEXFET® series.

The IRF3710STRR is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility within the specified parameter tolerances while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
Drain-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	57	A (Tc)
On-State Resistance (Rds On) @ 28A, 10V	23	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	130	nC
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF3710STRR are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): 100V (exact match required)
Package Type: D2PAK (TO-263-3) surface mount (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Operating Temperature Range: -55°C to 175°C minimum (equal or wider range acceptable)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): 57A or greater
On-State Resistance (Rds On): 23mOhm or lower (lower values indicate improved performance)
Gate-Source Threshold Voltage (Vgs(th)): 4V or lower (ensures gate drive compatibility)
Power Dissipation: 200W or greater (ensures thermal capability)

Substitutes are grouped into two categories: Parametric Equivalents (identical electrical specifications) and Manufacturer Recommended Substitutes (compatible within allowed parameter ranges). All substitute parts maintain the same package footprint and pinout configuration, ensuring direct board-level replacement without layout modifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Status	RoHS
IRF3710STRR	Infineon	100	57	23 @ 28A, 10V	4 @ 250µA	130 @ 10V	200	Obsolete	Non-compliant
IRF3710STRLPBF	Infineon	100	57	23 @ 28A, 10V	4 @ 250µA	130 @ 10V	200	Active	ROHS3 Compliant
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	2.4 @ 60µA	64 @ 10V	100	Active	ROHS3 Compliant
BUK7626-100B,118	Nexperia	100	49	26 @ 25A, 10V	4 @ 1mA	38 @ 10V	157	Obsolete	ROHS3 Compliant
PHB27NQ10T,118	Nexperia	100	28	50 @ 14A, 10V	4 @ 1mA	30 @ 10V	107	Active	ROHS3 Compliant
PHB45NQ10T,118	Nexperia	100	47	25 @ 25A, 10V	4 @ 1mA	61 @ 10V	150	Active	ROHS3 Compliant
PSMN009-100B,118	Nexperia	100	75	8.8 @ 25A, 10V	4 @ 1mA	156 @ 10V	230	Active	ROHS3 Compliant
PSMN015-100B,118	Nexperia	100	75	15 @ 25A, 10V	4 @ 1mA	90 @ 10V	300	Active	ROHS3 Compliant
PSMN016-100BS,118	Nexperia	100	57	16 @ 15A, 10V	4 @ 1mA	49 @ 10V	148	Active	ROHS3 Compliant
STB40NF10LT4	STMicroelectronics	100	40	33 @ 20A, 10V	2.5 @ 250µA	64 @ 4.5V	150	Active	ROHS3 Compliant
STB80NF10T4	STMicroelectronics	100	80	15 @ 40A, 10V	4 @ 250µA	182 @ 10V	300	Active	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRF3710STRLPBF is the parametric equivalent of IRF3710STRR. Both devices share identical electrical specifications: 100V Vdss, 57A continuous drain current, 23mOhm Rds On, and 200W power dissipation. The primary difference is product status and RoHS compliance. IRF3710STRLPBF is classified as Active and ROHS3 Compliant, whereas the original IRF3710STRR is Obsolete and RoHS non-compliant. IRF3710STRLPBF is the recommended direct replacement for new designs and ongoing production.

Manufacturer Recommended Substitutes (Performance-Matched Alternatives):

The following parts are recommended by Infineon Technologies and Nexperia as functional substitutes:

PSMN016-100BS,118 (Nexperia): Matches the 57A continuous drain current specification of the original part. Vdss is 100V. Rds On is 16mOhm at 15A, 10V (lower than the original 23mOhm), indicating improved on-state performance. Power dissipation is 148W (lower than the original 200W). This part is Active and ROHS3 Compliant. Gate charge is 49nC, lower than the original 130nC, resulting in faster switching characteristics.

STB80NF10T4 (STMicroelectronics): Rated for 80A continuous drain current, exceeding the original 57A specification. Vdss is 100V. Rds On is 15mOhm at 40A, 10V, providing superior on-state performance. Power dissipation is 300W, significantly higher than the original 200W. This part is Active and ROHS3 Compliant. Gate charge is 182nC, higher than the original, indicating slightly slower switching. This device is suitable for applications requiring higher current capacity or improved thermal performance.

PSMN015-100B,118 (Nexperia): Rated for 75A continuous drain current. Vdss is 100V. Rds On is 15mOhm at 25A, 10V. Power dissipation is 300W. This part is Active and ROHS3 Compliant. Gate charge is 90nC. Suitable for applications requiring higher current handling and thermal margin.

PHB45NQ10T,118 (Nexperia): Rated for 47A continuous drain current, slightly below the original 57A. Vdss is 100V. Rds On is 25mOhm at 25A, 10V, comparable to the original specification. Power dissipation is 150W. This part is Active and ROHS3 Compliant. Gate charge is 61nC. Suitable for applications with moderate current requirements.

STB40NF10LT4 (STMicroelectronics): Rated for 40A continuous drain current. Vdss is 100V. Rds On is 33mOhm at 20A, 10V. Power dissipation is 150W. This part is Active and ROHS3 Compliant. Vgs(th) is 2.5V, lower than the original 4V. Gate charge is 64nC. Suitable for lower-current applications with improved gate drive efficiency.

Lower Current Alternatives:

PHB27NQ10T,118 (Nexperia): Rated for 28A continuous drain current. Vdss is 100V. Rds On is 50mOhm at 14A, 10V. Power dissipation is 107W. This part is Active and ROHS3 Compliant. Gate charge is 30nC. Suitable only for applications with significantly reduced current requirements.

IPB50N10S3L16ATMA1 (Infineon): Rated for 50A continuous drain current. Vdss is 100V. Rds On is 15.4mOhm at 50A, 10V. Power dissipation is 100W. This part is Active and ROHS3 Compliant. Vgs(th) is 2.4V. Gate charge is 64nC. Suitable for applications with moderate current requirements and improved gate drive efficiency.

Selection Criteria by Application:

Direct replacement with improved compliance: IRF3710STRLPBF
Higher current capacity with superior thermal performance: STB80NF10T4, PSMN015-100B,118
Balanced performance with active status: PSMN016-100BS,118, PHB45NQ10T,118
Lower current applications: STB40NF10LT4, PHB27NQ10T,118

All recommended substitutes maintain the D2PAK (TO-263-3) package footprint and pinout, enabling direct board-level replacement. All substitute parts are ROHS3 Compliant, addressing the non-compliance status of the original obsolete device.

Frequently Asked Questions (FAQ)

Q1: Can IRF3710STRLPBF be used as a direct replacement for IRF3710STRR?

A: Yes. IRF3710STRLPBF is the parametric equivalent of IRF3710STRR. Both devices have identical electrical specifications: 100V Vdss, 57A continuous drain current, 23mOhm Rds On, and 200W power dissipation. The primary difference is that IRF3710STRLPBF is Active and ROHS3 Compliant, whereas IRF3710STRR is Obsolete and RoHS non-compliant. IRF3710STRLPBF is the recommended direct replacement.

Q2: What is the difference between the main part and the manufacturer recommended substitutes?

A: The main part IRF3710STRR is obsolete. Manufacturer recommended substitutes are active parts that meet or exceed the electrical specifications of the original device. These substitutes may have different continuous drain current ratings, on-state resistance values, power dissipation ratings, or gate charge characteristics. All substitutes maintain the same 100V Vdss rating, D2PAK package, and N-Channel MOSFET technology. Selection depends on the specific application requirements for current capacity, thermal performance, and switching speed.

Q3: Can I use a substitute with lower continuous drain current rating?

A: Substitutes with lower continuous drain current ratings (such as PHB27NQ10T,118 at 28A or STB40NF10LT4 at 40A) can be used only if the application circuit does not require the full 57A current capacity of the original device. The substitute must be rated for the maximum continuous drain current that the circuit will draw. Using an undersized device may result in thermal stress, reduced reliability, or circuit failure.

Q4: Can I use a substitute with higher continuous drain current rating?

A: Yes. Substitutes with higher continuous drain current ratings (such as STB80NF10T4 at 80A or PSMN015-100B,118 at 75A) can be used in place of the original 57A device. Higher-rated devices provide additional thermal margin and current capacity. However, verify that the on-state resistance, gate charge, and power dissipation characteristics are compatible with the circuit design. Higher gate charge may require adjustment of gate drive circuitry.

Q5: What does Rds On (on-state resistance) mean, and why is it important?

A: Rds On is the resistance between the drain and source terminals when the MOSFET is fully conducting (on-state). Lower Rds On values result in lower power dissipation and reduced heat generation. The original IRF3710STRR has Rds On of 23mOhm at 28A, 10V. Substitutes with lower Rds On values (such as PSMN016-100BS,118 at 16mOhm or STB80NF10T4 at 15mOhm) provide improved efficiency. Substitutes with higher Rds On values result in greater power dissipation and may require enhanced thermal management.

Q6: What is gate charge (Qg), and how does it affect circuit performance?

A: Gate charge is the total charge required to switch the MOSFET from off-state to on-state at a specified gate-source voltage. The original IRF3710STRR has gate charge of 130nC at 10V. Lower gate charge values (such as IPB50N10S3L16ATMA1 at 64nC or PHB27NQ10T,118 at 30nC) result in faster switching and lower gate drive power requirements. Higher gate charge values (such as STB80NF10T4 at 182nC) result in slower switching and higher gate drive power. Select substitutes based on the gate drive circuit capability and switching frequency requirements.

Q7: Are all substitute parts compatible with the same PCB layout?

A: Yes. All substitute parts listed maintain the D2PAK (TO-263-3) package footprint and pinout configuration. Direct board-level replacement is possible without PCB layout modifications. However, verify that thermal management (heatsinking) is adequate for the substitute device's power dissipation rating. Devices with higher power dissipation may require improved thermal coupling to the PCB or heatsink.

Q8: What is the difference between Tc (case temperature) and Tj (junction temperature) ratings?

A: Tc (case temperature) is the temperature measured at the device case. Tj (junction temperature) is the temperature at the semiconductor junction, which is typically higher than the case temperature. Continuous drain current ratings are specified at either Tc or Tj depending on the manufacturer. The original IRF3710STRR specifies 57A at Tc. When comparing substitutes, ensure that current ratings are specified at the same temperature reference to make valid comparisons.

Q9: Why is RoHS compliance important?

A: RoHS (Restriction of Hazardous Substances) compliance restricts the use of lead, cadmium, mercury, and other hazardous materials in electronic components. The original IRF3710STRR is RoHS non-compliant. All recommended substitutes are ROHS3 Compliant, meeting current environmental and regulatory requirements. ROHS3 Compliant parts are required for many applications, particularly in consumer electronics and regulated industries. Using ROHS3 Compliant substitutes ensures compliance with current manufacturing standards and future regulatory requirements.

Q10: Can I mix the original IRF3710STRR with substitute parts in the same circuit?

A: Mixing different MOSFET types in the same circuit is not recommended unless the circuit design specifically accounts for parameter variations. Different devices have different Rds On, gate charge, and switching characteristics. In parallel configurations, parameter mismatches can result in unequal current distribution and thermal stress. In series or switching applications, parameter differences may affect circuit timing and performance. If substitution is necessary, replace all devices of the same type with the same substitute part number to maintain consistent performance.

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